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Hooman Farkhani
Hooman Farkhani
Associate Professor, Aarhus University, Aarhus, Denmark
Bestätigte E-Mail-Adresse bei ece.au.dk - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Comparative study of FinFETs versus 22nm bulk CMOS technologies: SRAM design perspective
H Farkhani, A Peiravi, JM Kargaard, F Moradi
2014 27th IEEE International System-on-Chip Conference (SOCC), 449-454, 2014
582014
A fully digital ADC using a new delay element with enhanced linearity
H Farkhani, M Meymandi-Nejad, M Sachdev
2008 IEEE International Symposium on Circuits and Systems, 2406-2409, 2008
582008
STT-RAM energy reduction using self-referenced differential write termination technique
H Farkhani, M Tohidi, A Peiravi, JK Madsen, F Moradi
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 25 (2), 476-487, 2016
422016
A low-power high-speed spintronics-based neuromorphic computing system using real-time tracking method
H Farkhani, M Tohidi, S Farkhani, JK Madsen, F Moradi
IEEE Journal on Emerging and Selected Topics in Circuits and Systems 8 (3 …, 2018
392018
A new asymmetric 6T SRAM cell with a write assist technique in 65 nm CMOS technology
H Farkhani, A Peiravi, F Moradi
Microelectronics Journal 45 (11), 1556-1565, 2014
312014
LAO-NCS: Laser Assisted Spin Torque Nano Oscillator-Based Neuromorphic Computing System
H Farkhani, T Böhnert, M Tarequzzaman, JD Costa, A Jenkins, R Ferreira, ...
Frontiers in Neuroscience, 2020
242020
Low-energy write operation for 1T-1MTJ STT-RAM bitcells with negative bitline technique
H Farkhani, A Peiravi, F Moradi
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 24 (4 …, 2015
182015
A 2.3-μW capacitively coupled chopper-stabilized neural amplifier with input impedance of 6.7 GΩ
M Zamani, Y Rezaeiyan, HA Huynh, M Ronchini, H Farkhani, F Moradi
IEEE Solid-State Circuits Letters 4, 133-136, 2021
172021
Tunable voltage-mode subthreshold CMOS neuron
M Ronchini, M Zamani, H Farkhani, F Moradi
2020 IEEE Computer Society Annual Symposium on VLSI (ISVLSI), 252-257, 2020
172020
A low-noise high input impedance analog front-end design for neural recording implant
HA Huynh, M Ronchini, A Rashidi, M Tohidi, H Farkhani, F Moradi
2019 26th IEEE International Conference on Electronics, Circuits and Systems …, 2019
172019
Weighted spin torque nano-oscillator system for neuromorphic computing
T Böhnert, Y Rezaeiyan, MS Claro, L Benetti, AS Jenkins, H Farkhani, ...
Communications Engineering 2 (1), 65, 2023
162023
Spin-orbit-torque-based devices, circuits and architectures
F Moradi, H Farkhani, B Zeinali, H Ghanatian, JMA Pelloux-Prayer, ...
arXiv preprint arXiv:1912.01347, 2019
162019
LAS-NCS: A laser-assisted spintronic neuromorphic computing system
H Farkhani, IL Prejbeanu, F Moradi
IEEE Transactions on Circuits and Systems II: Express Briefs 66 (5), 838-842, 2019
142019
A new write assist technique for SRAM design in 65 nm CMOS technology
H Farkhani, A Peiravi, F Moradi
Integration 50, 16-27, 2015
142015
A CMOS-based neuromorphic device for seizure detection from LFP signals
M Ronchini, M Zamani, HA Huynh, Y Rezaeiyan, G Panuccio, H Farkhani, ...
Journal of Physics D: Applied Physics 55 (1), 014001, 2021
132021
Granular vortex spin-torque nano oscillator for reservoir computing
S Shreya, AS Jenkins, Y Rezaeiyan, R Li, T Böhnert, L Benetti, R Ferreira, ...
Scientific Reports 13 (1), 16722, 2023
122023
Multi-level wordline driver for robust SRAM design in nano-scale CMOS technology
F Moradi, G Panagopoulos, G Karakonstantis, H Farkhani, DT Wisland, ...
Microelectronics Journal 45 (1), 23-34, 2014
122014
Verilog-A-based analytical modeling of vortex spin-torque nano oscillator
S Shreya, Y Rezaeiyan, A Jenkins, T Böhnert, H Farkhani, R Ferreira, ...
IEEE Transactions on Electron Devices 69 (8), 4651-4658, 2022
102022
Analysis and Design of a PMUT-based transducer for Powering Brain Implants
F Narvaez, S Hosseini, H Farkhani, F Moradi
arXiv preprint arXiv:2101.04443, 2021
92021
In the realm of hybrid Brain: Human Brain and AI
H Fares, M Ronchini, M Zamani, H Farkhani, F Moradi
arXiv preprint arXiv:2210.01461, 2022
82022
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