| 12 W/mm AlGaN-GaN HFETs on silicon substrates JW Johnson, EL Piner, A Vescan, R Therrien, P Rajagopal, JC Roberts, ... IEEE Electron Device Letters 25 (7), 459-461, 2004 | 319 | 2004 |
| AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon (111) substrates JD Brown, R Borges, E Piner, A Vescan, S Singhal, R Therrien Solid-State Electronics 46 (10), 1535-1539, 2002 | 162 | 2002 |
| Reliability of large periphery GaN-on-Si HFETs S Singhal, T Li, A Chaudhari, AW Hanson, R Therrien, JW Johnson, ... Microelectronics Reliability 46 (8), 1247-1253, 2006 | 127 | 2006 |
| GaN-on-Si failure mechanisms and reliability improvements S Singhal, JC Roberts, P Rajagopal, T Li, AW Hanson, R Therrien, ... 2006 IEEE International Reliability Physics Symposium Proceedings, 95-98, 2006 | 96 | 2006 |
| Wearable sensor system powered by a biofuel cell for detection of lactate levels in sweat SO Garcia, YV Ulyanova, R Figueroa-Teran, KH Bhatt, S Singhal, ... ECS Journal of Solid State Science and Technology 5 (8), M3075, 2016 | 90 | 2016 |
| Linearity characteristics of microwave-power GaN HEMTs W Nagy, J Brown, R Borges, S Singhal IEEE transactions on microwave theory and techniques 51 (2), 660-664, 2003 | 88 | 2003 |
| Improved interfacial electron transfer in modified bilirubin oxidase biocathodes RJ Lopez, S Babanova, Y Ulyanova, S Singhal, P Atanassov ChemElectroChem 1 (1), 241-248, 2014 | 84 | 2014 |
| Material, process, and device development of GaN-based HFETs on silicon substrates JW Johnson, J Gao, JD BROWN, A HANSON, S SINGHAL, R BORGES Proceedings-Electrochemical Society, 405-419, 2004 | 73 | 2004 |
| A 36mm GaN-on-Si HFET producing 368W at 60V with 70% drain efficiency R Therrien, S Singhal, JW Johnson, W Nagy, R Borges, A Chaudhari, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 71 | 2005 |
| 150 W GaN-on-Si RF power transistor W Nagy, S Singhal, R Borges, JW Johnson, JD Brown, R Therrien, ... IEEE MTT-S International Microwave Symposium Digest, 2005., 483-486, 2005 | 65 | 2005 |
| Gallium nitride material transistors and methods associated with the same WH Nagy, RM Borges, JD Brown, AD Chaudhari, JW Cook Jr, ... US Patent 7,135,720, 2006 | 60 | 2006 |
| Gallium nitride material structures including isolation regions and methods J Johnson, R Borges, J Brown, J Cook, A Hanson, E Piner, P Rajagopal, ... US Patent App. 10/879,695, 2005 | 55 | 2005 |
| Effect of enzymatic orientation through the use of syringaldazine molecules on multiple multi-copper oxidase enzymes Y Ulyanova, S Babanova, E Pinchon, I Matanovic, S Singhal, P Atanassov Physical Chemistry Chemical Physics 16 (26), 13367-13375, 2014 | 49 | 2014 |
| AlGaN/GaN HFETs on 100 mm silicon substrates for commercial wireless applications A Vescan, JD Brown, JW Johnson, R Therrien, T Gehrke, P Rajagopal, ... physica status solidi (c), 52-56, 2003 | 41 | 2003 |
| Design of experiments and principal component analysis as approaches for enhancing performance of gas-diffusional air-breathing bilirubin oxidase cathode S Babanova, K Artyushkova, Y Ulyanova, S Singhal, P Atanassov Journal of Power Sources 245, 389-397, 2014 | 40 | 2014 |
| Qualification and reliability of a GaN process platform S Singhal, AW Hanson, A Chaudhari, P Rajagopal, T Li, JW Johnson, ... Int. Conf. Compound Semiconductor MANTECH Tech. Dig, 83-86, 2007 | 36 | 2007 |
| Performance of AlGaN/GaN HFETs fabricated on 100 mm silicon substrates for wireless basestation applications JD Brown, W Nagy, S Singhal, S Peters, A Chaudhari, T Li, R Nichols, ... 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No …, 2004 | 31 | 2004 |
| Direct on-wafer non-invasive thermal monitoring of AlGaN/GaN power HFETs under microwave large signal conditions S Nuttinck, R Mukhopadhyay, C Loper, S Singhal, M Harris, J Laskar | 27 | 2005 |
| Development of a GaN transistor process for linear power applications AW Hanson, R Borges, JD Brown, JW Cook Jr, T Gehrke, JW Johnson, ... Nitronex Corporation, Paper presented at the 2004 International Conference …, 2004 | 27 | 2004 |
| Gallium nitride material devices and associated methods JW Johnson, S Singhal, AW Hanson, RJ Therrien US Patent 9,608,102, 2017 | 25 | 2017 |
