Voltage tuneable terahertz emission from a ballistic nanometer InGaAs∕ InAlAs transistor J Lusakowski, W Knap, N Dyakonova, L Varani, J Mateos, T Gonzalez, ...
Journal of applied physics 97 (6), 2005
185 2005 Terahertz detection and imaging using graphene ballistic rectifiers G Auton, DB But, J Zhang, E Hill, D Coquillat, C Consejo, P Nouvel, ...
Nano letters 17 (11), 7015-7020, 2017
134 2017 Microscopic simulation of electronic noise in semiconductor materials and devices L Varani, L Reggiani, T Kuhn, T Gonzalez, D Pardo
IEEE transactions on electron devices 41 (11), 1916-1925, 1994
103 1994 Thermal conductivity and Lorenz number for one-dimensional ballistic transport A Greiner, L Reggiani, T Kuhn, L Varani
Physical review letters 78 (6), 1114, 1997
84 1997 Out-of-equilibrium collective oscillation as phonon condensation in a model protein I Nardecchia, J Torres, M Lechelon, V Giliberti, M Ortolani, P Nouvel, ...
Physical Review X 8 (3), 031061, 2018
65 2018 Terahertz spectroscopy of plasma waves in high electron mobility transistors P Nouvel, H Marinchio, J Torres, C Palermo, D Gasquet, L Chusseau, ...
Journal of Applied Physics 106 (1), 2009
61 2009 Monte Carlo method for the simulation of electronic noise in semiconductors T Kuhn, L Reggiani, L Varani, V Mitin
Physical Review B 42 (9), 5702, 1990
61 1990 Linear and nonlinear analysis of microwave power generation in submicrometer n + nn + InP diodes V Gruzinskis, E Starikov, P Shiktorov, L Reggiani, L Varani
Journal of applied physics 76 (9), 5260-5271, 1994
57 1994 Modelling of small-signal response and electronic noise in semiconductor high-field transport L Reggiani, E Starikov, P Shiktorov, V Gruzinskis, L Varani
Semiconductor science and technology 12 (2), 141, 1997
55 1997 Plasma-wave detectors for terahertz wireless communication S Blin, F Teppe, L Tohme, S Hisatake, K Arakawa, P Nouvel, D Coquillat, ...
IEEE electron device letters 33 (10), 1354-1356, 2012
51 2012 Room temperature coherent and voltage tunable terahertz emission from nanometer-sized field effect transistors S Boubanga-Tombet, F Teppe, J Torres, A El Moutaouakil, D Coquillat, ...
Applied Physics Letters 97 (26), 2010
49 2010 Wireless communication at 310 GHz using GaAs high-electron-mobility transistors for detection S Blin, L Tohme, D Coquillat, S Horiguchi, Y Minamikata, S Hisatake, ...
Journal of Communications and Networks 15 (6), 559-568, 2013
48 2013 Generation-recombination noise in semiconductors V Mitin, L Reggiani, L Varani
Noise and fluctuations control in electronic devices, 1-19, 2002
48 2002 Monte Carlo simulation of the generation of terahertz radiation in GaN E Starikov, P Shiktorov, V Gružinskis, L Reggiani, L Varani, JC Vaissiere, ...
Journal of Applied Physics 89 (2), 1161-1171, 2001
48 2001 Hydrodynamic analysis of DC and AC hot-carrier transport in semiconductors V Gruzhinskis, E Starikov, P Shiktorov, L Reggiani, M Saraniti, L Varani
Semiconductor science and technology 8 (7), 1283, 1993
46 1993 Microscopic analysis of electron noise in GaAs Schottky barrier diodes T Gonzalez, D Pardo, L Reggiani, L Varani
Journal of applied physics 82 (5), 2349-2358, 1997
45 1997 Noise and correlation functions of hot carriers in semiconductors L Reggiani, T Kuhn, L Varani
Applied Physics A 54, 411-427, 1992
44 1992 Monte Carlo analysis of the behavior and spatial origin of electronic noise in GaAs MESFET's T Gonzalez, D Pardo, L Varani, L Reggiani
IEEE transactions on electron devices 42 (5), 991-998, 1995
43 1995 Hydrodynamic modeling of optically excited terahertz plasma oscillations in nanometric field effect transistors H Marinchio, G Sabatini, C Palermo, J Pousset, J Torres, L Chusseau, ...
Applied Physics Letters 94 (19), 2009
42 2009 Noise temperature of P Shiktorov, V Gružinskis, E Starikov, L Reggiani, L Varani
Physical Review B 54 (12), 8821, 1996
41 1996 