| A roadmap for electronic grade 2D materials N Briggs, S Subramanian, Z Lin, X Li, X Zhang, K Zhang, K Xiao, ... 2D Materials 6 (2), 022001, 2019 | 283 | 2019 |
| Diffusion-Controlled Epitaxy of Large Area Coalesced WSe2 Monolayers on Sapphire X Zhang, TH Choudhury, M Chubarov, Y Xiang, B Jariwala, F Zhang, ... Nano letters 18 (2), 1049-1056, 2018 | 277 | 2018 |
| Realizing large-scale, electronic-grade two-dimensional semiconductors YC Lin, B Jariwala, BM Bersch, K Xu, Y Nie, B Wang, SM Eichfeld, ... ACS nano 12 (2), 965-975, 2018 | 240 | 2018 |
| Defect-Controlled Nucleation and Orientation of WSe2 on hBN: A Route to Single-Crystal Epitaxial Monolayers X Zhang, F Zhang, Y Wang, DS Schulman, T Zhang, A Bansal, N Alem, ... ACS nano 13 (3), 3341-3352, 2019 | 145 | 2019 |
| Epitaxial growth of two-dimensional layered transition metal dichalcogenides TH Choudhury, X Zhang, ZY Al Balushi, M Chubarov, JM Redwing Annual Review of Materials Research 50, 155-177, 2020 | 105 | 2020 |
| Etchant-free transfer of 2D nanostructures F Zhang, C Erb, L Runkle, X Zhang, N Alem Nanotechnology 29 (2), 025602, 2017 | 70 | 2017 |
| Room‐Temperature Active Modulation of Valley Dynamics in a Monolayer Semiconductor through Chiral Purcell Effects Z Wu, J Li, X Zhang, JM Redwing, Y Zheng Advanced Materials 31 (49), 1904132, 2019 | 67 | 2019 |
| Influence of Carbon in Metalorganic Chemical Vapor Deposition of Few-Layer WSe2 Thin Films X Zhang, ZY Al Balushi, F Zhang, TH Choudhury, SM Eichfeld, N Alem, ... Journal of Electronic Materials 45 (12), 6273-6279, 2016 | 65 | 2016 |
| Opportunities in electrically tunable 2D materials beyond graphene: Recent progress and future outlook T Vincent, J Liang, S Singh, EG Castanon, X Zhang, A McCreary, ... Applied Physics Reviews 8 (4), 041320, 2021 | 48 | 2021 |
| Defect creation in WSe 2 with a microsecond photoluminescence lifetime by focused ion beam irradiation Q Qian, L Peng, N Perea-Lopez, K Fujisawa, K Zhang, X Zhang, ... Nanoscale 12 (3), 2047-2056, 2020 | 47 | 2020 |
| In-plane x-ray diffraction for characterization of monolayer and few-layer transition metal dichalcogenide films M Chubarov, TH Choudhury, X Zhang, JM Redwing Nanotechnology 29 (5), 055706, 2018 | 46 | 2018 |
| Hexagonal Boron Nitride Crystal Growth from Iron, a Single Component Flux J Li, J Wang, X Zhang, C Elias, G Ye, D Evans, G Eda, JM Redwing, ... ACS nano 15 (4), 7032-7039, 2021 | 40 | 2021 |
| Hexagonal boron nitride single crystal growth from solution with a temperature gradient J Li, C Yuan, C Elias, J Wang, X Zhang, G Ye, C Huang, M Kuball, G Eda, ... Chemistry of Materials 32 (12), 5066-5072, 2020 | 36 | 2020 |
| Thin Film Transistors Using Wafer-Scale Low-Temperature MOCVD WSe2 Y Gong, X Zhang, JM Redwing, TN Jackson Journal of Electronic Materials 45 (12), 6280-6284, 2016 | 36 | 2016 |
| Epitaxial growth of few-layer β-In2Se3 thin films by metalorganic chemical vapor deposition X Zhang, S Lee, A Bansal, F Zhang, M Terrones, TN Jackson, ... Journal of Crystal Growth 533, 125471, 2020 | 31 | 2020 |
| Locally defined quantum emission from epitaxial few-layer tungsten diselenide W Wu, CK Dass, JR Hendrickson, RD Montaño, RE Fischer, X Zhang, ... Applied Physics Letters 114 (21), 213102, 2019 | 30 | 2019 |
| Atomic layer deposition of ZnO on MoS2 and WSe2 TN Walter, S Lee, X Zhang, M Chubarov, JM Redwing, TN Jackson, ... Applied Surface Science 480, 43-51, 2019 | 29 | 2019 |
| Modeling for Structural Engineering and Synthesis of Two-Dimensional WSe2 Using a Newly Developed ReaxFF Reactive Force Field N Nayir, Y Wang, S Shabnam, DR Hickey, L Miao, X Zhang, S Bachu, ... The Journal of Physical Chemistry C 124 (51), 28285-28297, 2020 | 27 | 2020 |
| Multi-wafer batch synthesis of graphene on Cu films by quasi-static flow chemical vapor deposition B Huet, X Zhang, JM Redwing, DW Snyder, JP Raskin 2D Materials 6 (4), 045032, 2019 | 22 | 2019 |
| K-means-driven Gaussian Process data collection for angle-resolved photoemission spectroscopy CN Melton, MM Noack, T Ohta, TE Beechem, J Robinson, X Zhang, ... Machine Learning: Science and Technology 1 (4), 045015, 2020 | 17 | 2020 |
Joan RedwingPenn State UniversityBestätigte E-Mail-Adresse bei psu.edu