Energetics of self-interstitial clusters in Si NEB Cowern, G Mannino, PA Stolk, F Roozeboom, HGA Huizing, ...
Physical Review Letters 82 (22), 4460, 1999
414 1999 Influence of average size and interface passivation on the spectral emission of Si nanocrystals embedded in SiO2 B Garrido Fernández, M Lopez, C Garcıa, A Pérez-Rodrıguez, JR Morante, ...
Journal of Applied Physics 91 (2), 798-807, 2002
397 2002 Ostwald ripening of end-of-range defects in silicon C Bonafos, D Mathiot, A Claverie
Journal of Applied Physics 83 (6), 3008-3017, 1998
229 1998 Basic mechanisms involved in the Smart-Cut® process B Aspar, M Bruel, H Moriceau, C Maleville, T Poumeyrol, AM Papon, ...
Microelectronic Engineering 36 (1-4), 233-240, 1997
215 1997 Direct Mapping of Strain in a Strained Silicon Transistor<? format?> by High-Resolution Electron Microscopy F Hüe, M Hÿtch, H Bender, F Houdellier, A Claverie
Physical review letters 100 (15), 156602, 2008
213 2008 Tulip flame-the mechanism of flame front inversion B Ponizy, A Claverie, B Veyssière
Combustion and flame 161 (12), 3051-3062, 2014
208 2014 Extended defects in shallow implants A Claverie, B Colombeau, B De Mauduit, C Bonafos, X Hebras, ...
Applied Physics A 76, 1025-1033, 2003
192 2003 Optical visualization and electrical characterization of fast-rising pulsed dielectric barrier discharge for airflow control applications N Benard, N Zouzou, A Claverie, J Sotton, E Moreau
Journal of Applied Physics 111 (3), 2012
190 2012 Elucidation of the surface passivation role on the photoluminescence emission yield of silicon nanocrystals embedded in M López, B Garrido, C Garcıa, P Pellegrino, A Pérez-Rodrıguez, ...
Applied Physics Letters 80 (9), 1637-1639, 2002
166 2002 Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy A Kanjilal, JL Hansen, P Gaiduk, AN Larsen, N Cherkashin, A Claverie, ...
Applied Physics Letters 82 (8), 1212-1214, 2003
164 2003 Engineering strained silicon on insulator wafers with the Smart CutTM technology B Ghyselen, JM Hartmann, T Ernst, C Aulnette, B Osternaud, ...
Solid-state electronics 48 (8), 1285-1296, 2004
160 2004 The generic nature of the Smart-Cut® process for thin film transfer B Aspar, H Moriceau, E Jalaguier, C Lagahe, A Soubie, B Biasse, ...
Journal of Electronic Materials 30, 834-840, 2001
156 2001 Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin C Bonafos, M Carrada, N Cherkashin, H Coffin, D Chassaing, ...
Journal of applied physics 95 (10), 5696-5702, 2004
147 2004 Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis P Normand, E Kapetanakis, P Dimitrakis, D Tsoukalas, K Beltsios, ...
Applied Physics Letters 83 (1), 168-170, 2003
143 2003 A transmission electron microscopy quantitative study of the growth kinetics of H platelets in Si J Grisolia, G Ben Assayag, A Claverie, B Aspar, C Lagahe, L Laanab
Applied Physics Letters 76 (7), 852-854, 2000
143 2000 Stress measurements of germanium nanocrystals embedded in silicon oxide A Wellner, V Paillard, C Bonafos, H Coffin, A Claverie, B Schmidt, ...
Journal of Applied Physics 94 (9), 5639-5642, 2003
140 2003 Towards disruptions in Earth observation? New Earth Observation systems and markets evolution: Possible scenarios and impacts G Denis, A Claverie, X Pasco, JP Darnis, B de Maupeou, M Lafaye, ...
Acta Astronautica 137, 415-433, 2017
138 2017 Formation energies and relative stability of perfect and faulted dislocation loops in silicon F Cristiano, J Grisolia, B Colombeau, M Omri, B De Mauduit, A Claverie, ...
Journal of Applied Physics 87 (12), 8420-8428, 2000
130 2000 Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam synthesis P Dimitrakis, E Kapetanakis, D Tsoukalas, D Skarlatos, C Bonafos, ...
Solid-State Electronics 48 (9), 1511-1517, 2004
109 2004 White luminescence from Si+ and C+ ion-implanted SiO2 films A Pérez-Rodrıguez, O González-Varona, B Garrido, P Pellegrino, ...
Journal of Applied Physics 94 (1), 254-262, 2003
108 2003 