| Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape RT Bühler, R Giacomini, MA Pavanello, JA Martino Semiconductor science and technology 24 (11), 115017, 2009 | 22 | 2009 |
| Fin shape influence on the analog performance of standard and strained MuGFETs RT Bühler, JA Martino, PGD Agopian, R Giacomini, E Simoen, C Claeys 2010 IEEE International SOI Conference (SOI), 1-2, 2010 | 12 | 2010 |
| Filter-free color pixel sensor using gated PIN photodiodes and machine learning techniques JB Junior, A Pereira, R Buhler, A Perin, C Novo, M Galeti, J Oliveira, ... Microelectronics Journal 120, 105337, 2022 | 8 | 2022 |
| TCAD strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs RT Bühler, G Eneman, P Favia, LJ Witters, B Vincent, A Hikavyy, R Loo, ... IEEE Transactions on Electron Devices 62 (4), 1079-1084, 2015 | 8 | 2015 |
| Cross-section shape influence on trapezoidal triple-gate SOI MOSFET analog parameters RT Bühler, JA Martino, MA Pavanello, R Giacomini Proceedings of EuroSOI 2009 1, 49-50, 2009 | 7 | 2009 |
| Quantum efficiency improvement of SOI pin lateral diodes operating as UV detectors at high temperatures C Novo, R Bühler, J Baptista, R Giacomini, A Afzalian, D Flandre IEEE Sensors Journal 17 (6), 1641-1648, 2017 | 6 | 2017 |
| Responsivity improvement for short wavelenghts using full-gated PIN lateral SiGe diode C Novo, R Bühler, R Zapata, R Giacomini 2016 31st Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2016 | 6 | 2016 |
| Comparison between experimental and simulated strain profiles in Ge channels with embedded source/drain stressors R Bühler, G Eneman, P Favia, H Bender, B Vincent, A Hikavyy, R Loo, ... physica status solidi (c) 11 (11‐12), 1578-1582, 2014 | 5 | 2014 |
| Biaxial stress simulation and electrical characterization of triple-gate SOI nMOSFETs RT Bühler, PGD Agopian, E Simoen, C Claeys, JA Martino ECS Transactions 49 (1), 145, 2012 | 5 | 2012 |
| From micro to nano FinFETs: The impact of channel-shape on analog parameters RT Bühler, R Giacomini, MA Pavanello, JA Martino 2009 International Semiconductor Device Research Symposium, 1-2, 2009 | 5 | 2009 |
| Non-linear model for pseudo CMOS resistors addressing the recovery time in bio-amplifiers CF Pereira, M Galeti, PL Benko, RT Buhler, JC Lucchi, RC Giacomini Semiconductor Science and Technology 34 (7), 075032, 2019 | 4 | 2019 |
| Fin cross-section shape influence on short channel effects of MuGFETs RT Buhler, R Giacomini, MA Pavanello, JA Martino Journal of Integrated Circuits and Systems 7 (2), 137-144, 2012 | 4 | 2012 |
| Fin shape influence on analog performance of MuGFETs at room and at low temperature RT Buhler, JA Martino, PDG Agopian, R Giacomini, E Simoen, C Claeys | 4 | 2011 |
| SOI stacked transistors tolerance to single-event effects AL Perin, ASN Pereira, RT Buhler, MAG da Silveira, RC Giacomini IEEE Transactions on Device and Materials Reliability 19 (2), 393-401, 2019 | 3 | 2019 |
| Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs RT Bühler, PGD Agopian, N Collaert, E Simoen, C Claeys, JA Martino Solid-State Electronics 103, 209-215, 2015 | 3 | 2015 |
| Biaxial+ uniaxial stress effectiveness in tri-gate SOI nMOSFETs with variable fin dimensions RT Bühler, PGD Agopian, E Simoen, C Claeys, JA Martino 2012 IEEE International SOI Conference (SOI), 1-2, 2012 | 3 | 2012 |
| Uniaxial stress efficiency for different fin dimensions of triple-gate SOI nMOSFETs RT Bühler, PGD Agopian, R Giacomini, E Simoen, C Claeys, JA Martino IEEE 2011 International SOI Conference, 1-2, 2011 | 3 | 2011 |
| Performance Prediction of a 4WD High-Performance Electric Vehicle Using a Model-Based Torque-Vectoring Approach R Serralvo Neto, JB Palermo, R Giacomini, M Rodrigues, F Delatore, ... World Electric Vehicle Journal 14 (7), 183, 2023 | 2 | 2023 |
| Modeling and experimental evaluation of pseudo-resistor’s temperature dependence CF Pereira, M Galeti, BB Testa, PL Benko, RT Buhler, JC Lucchi, ... Semiconductor Science and Technology 36 (1), 015019, 2020 | 2 | 2020 |
| Analysis of SiC MOSFETs Basic Parameters Aiming Application in Power Drivers for Electric Vehicles FC Feitosa, W Pereira, RT Bühler, RC Giacomini 2019 34th Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2019 | 2 | 2019 |
Renato GiacominiFEIBestätigte E-Mail-Adresse bei fei.edu.br
