| Novel a-IGZO anti-ferroelectric FET LIF neuron with co-integrated ferroelectric FET synapse for spiking neural networks C Sun, X Wang, H Xu, J Zhang, Z Zheng, Q Kong, Y Kang, K Han, L Jiao, ... 2022 International Electron Devices Meeting (IEDM), 2.1. 1-2.1. 4, 2022 | 18 | 2022 |
| Time-dependent Landau-Ginzburg equation-based ferroelectric tunnel junction modeling with dynamic response and multi-domain characteristics Z Zhou, L Jiao, J Zhou, Q Kong, S Luo, C Sun, Z Zheng, X Wang, D Zhang, ... IEEE Electron Device Letters 43 (1), 158-161, 2021 | 18 | 2021 |
| Deep insights into the Interplay of Polarization Switching, Charge Trapping, and Soft Breakdown in Metal-Ferroelectric-Metal-Insulator-Semiconductor Structure: Experiment and … X Wang, C Sun, Z Zheng, L Jiao, Z Zhou, D Zhang, G Liu, Q Kong, ... 2022 International Electron Devices Meeting (IEDM), 13.3. 1-13.3. 4, 2022 | 14 | 2022 |
| New insights into the impact of hydrogen evolution on the reliability of IGZO FETs: Experiment and modeling Q Kong, G Liu, C Sun, Z Zheng, D Zhang, J Zhang, H Xu, L Liu, Z Zhou, ... 2022 International Electron Devices Meeting (IEDM), 30.2. 1-30.2. 4, 2022 | 14 | 2022 |
| Fast Fourier transform (FFT) using flash arrays for noise signal processing D Zhang, H Wang, Y Feng, X Wang, G Liu, K Han, X Gong, J Liu, X Zhan, ... IEEE Electron Device Letters 43 (8), 1207-1210, 2022 | 12 | 2022 |
| Boosting the memory window of the BEOL-compatible MFMIS ferroelectric/anti-ferroelectric FETs by charge injection Z Zheng, C Sun, L Jiao, D Zhang, Z Zhou, X Wang, G Liu, Q Kong, Y Chen, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 12 | 2022 |
| BEOL-compatible Ta/HZO/W ferroelectric tunnel junction with low operating voltage targeting for low power application L Jiao, Z Zhou, Z Zheng, Y Kang, C Sun, Q Kong, X Wang, D Zhang, G Liu, ... 2022 International Conference on IC Design and Technology (ICICDT), 5-7, 2022 | 11 | 2022 |
| First demonstration of BEOL-compatible 3D Fin-gate oxide semiconductor Fe-FETs Q Kong, L Liu, Z Zheng, C Sun, A Kumar, R Shao, Z Zhou, L Jiao, J Zhang, ... 2022 International Electron Devices Meeting (IEDM), 12.3. 1-12.3. 4, 2022 | 8 | 2022 |
| Hydrogen-Related Instability of IGZO Field-Effect Transistors G Liu, Q Kong, D Zhang, X Wang, Z Zhou, L Jiao, K Han, Y Kang, ... IEEE Transactions on Electron Devices, 2024 | 7 | 2024 |
| BEOL-Compatible MFMIS Ferroelectric/Anti-Ferroelectric FETs—Part I: Experimental Results With Boosted Memory Window Z Zheng, L Jiao, D Zhang, C Sun, Z Zhou, X Wang, G Liu, Q Kong, Y Chen, ... IEEE Transactions on Electron Devices, 2023 | 6 | 2023 |
| Unveiling the Influence of Channel Thickness on PBTI and LFN in Sub-10 nm-thick IGZO FETs: A Holistic Perspective for Advancing Oxide Semiconductor Devices G Liu, Q Kong, X Wang, YH Tu, Z Zheng, C Sun, D Zhang, Y Kang, K Han, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 5 | 2023 |
| Grain Size Reduction of Ferroelectric HZO Enabled by Solid Phase Epitaxy (SPE): Working Principle, Experimental Demonstration, and Theoretical Understanding D Zhang, J Wu, Q Kong, Z Zheng, Z Zhou, L Liu, K Han, C Sun, X Wang, ... IEEE Transactions on Electron Devices, 2023 | 4 | 2023 |
| First Demonstration of BEOL-Compatible MFMIS Fe-FETs with 3D Multi-Fin Floating Gate: In-situ ALD-deposited MFM, LCH of 50 nm,> 2×109 Endurance, and 58 … X Wang, Z Zheng, Q Kong, L Jiao, K Han, C Sun, Z Zhou, L Liu, Y Kang, ... 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 3 | 2023 |
| First demonstration of BEOL-compatible 3D vertical FeNOR Y Feng, D Zhang, C Sun, Z Zheng, Y Chen, Q Kong, G Liu, Y Kang, K Han, ... 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2024 | 2 | 2024 |
| Unveiling the impact of AC PBTI on hydrogen formation in oxide semiconductor transistors G Liu, Q Kong, Z Zhou, X Ying, C Sun, K Han, Y Kang, D Zhang, X Wang, ... 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2024 | 2 | 2024 |
| Unveiling cryogenic performance (4 to 300 K) towards ultra-thin ferroelectric HZO: Novel kinetic barrier engineering and underlying mechanism D Zhang, Y Feng, Z Zheng, C Sun, Q Kong, G Liu, Z Zhou, G Liang, K Ni, ... 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2024 | 2 | 2024 |
| BEOL-Compatible MFMIS Ferroelectric/Anti-ferroelectric FETs—Part II: Mechanism With Load Line Analysis and Scaling Strategy Z Zheng, D Zhang, L Jiao, C Sun, Z Zhou, Y Chen, Q Kong, X Wang, G Liu, ... IEEE Transactions on Electron Devices, 2024 | 1 | 2024 |
| Advancing the Understanding of Reliability in BEOL-Compatible Oxide Semiconductor Transistors: The Impact of AC PBTI G Liu, Q Kong, Z Zhou, Y Xu, C Sun, K Han, Y Kang, D Zhang, X Wang, ... IEEE Transactions on Electron Devices, 2024 | | 2024 |
| Understanding Bias Stress-Induced Instabilities in ALD-Deposited ZnO FeFETs Featuring HZO-Al2O3-HZO Ferroelectric Stack C Sun, Q Kong, G Liu, D Zhang, L Jiao, X Wang, J Zhang, H Xu, Y Feng, ... IEEE Electron Device Letters, 2024 | | 2024 |
| Discovering the Impact of Cooling Scheme During Annealing: A New Knob for Achieving Thermally Stable IGZO FETs Q Kong, L Liu, K Han, C Sun, L Jiao, Z Zhou, Z Zheng, G Liu, H Xu, ... IEEE Transactions on Electron Devices, 2024 | | 2024 |
Xiao GongNational University of SingaporeBestätigte E-Mail-Adresse bei nus.edu.sg
