| Surface tension measurement of molten silicon by the oscillating drop method using electromagnetic levitation M Przyborowski, T Hibiya, M Eguchi, I Egry Journal of Crystal Growth 151 (1-2), 60-65, 1995 | 156 | 1995 |
| Three-dimensional oscillatory flow in a thin annular pool of silicon melt YR Li, N Imaishi, T Azami, T Hibiya Journal of Crystal Growth 260 (1-2), 28-42, 2004 | 139 | 2004 |
| Direct observation by X-ray radiography of convection of molten silicon in the Czochralski growth method K Kakimoto, M Eguchi, H Watanabe, T Hibiya Journal of crystal growth 88 (3), 365-370, 1988 | 123 | 1988 |
| Temperature fluctuations of the Marangoni flow in a liquid bridge of molten silicon under microgravity on board the TR-IA-4 rocket S Nakamura, T Hibiya, K Kakimoto, N Imaishi, S Nishizawa, A Hirata, ... Journal of Crystal Growth 186 (1-2), 85-94, 1998 | 112 | 1998 |
| Measurement of the density and the thermal expansion coefficient of molten silicon using electromagnetic levitation M Langen, T Hibiya, M Eguchi, I Egry Journal of crystal growth 186 (4), 550-556, 1998 | 102 | 1998 |
| Effect of the oxygen partial pressure on the surface tension of molten silicon and its temperature coefficient K Mukai, Z Yuan, K Nogi, T Hibiya Isij International 40 (Suppl), S148-S152, 2000 | 99 | 2000 |
| The role of surface-tension-driven flow in the formation of a surface pattern on a Czochralski silicon melt T Azami, S Nakamura, M Eguchi, T Hibiya Journal of crystal growth 233 (1-2), 99-107, 2001 | 97 | 2001 |
| Spoke patterns on molten silicon in Czochralski system KW Yi, K Kakimoto, M Eguchi, M Watanabe, T Shyo, T Hibiya Journal of crystal growth 144 (1-2), 20-28, 1994 | 94 | 1994 |
| Natural and forced convection of molten silicon during Czochralski single crystal growth K Kakimoto, M Eguchi, H Watanabe, T Hibiya Journal of crystal growth 94 (2), 412-420, 1989 | 92 | 1989 |
| X-ray diffraction study of undercooled molten silicon H Kimura, M Watanabe, K Izumi, T Hibiya, D Holland-Moritz, T Schenk, ... Applied Physics Letters 78 (5), 604-606, 2001 | 91 | 2001 |
| Thermophysical properties data on molten semiconductors S Nakamura, T Hibiya International Journal of Thermophysics 13, 1061-1084, 1992 | 87 | 1992 |
| Influence of oxygen partial pressure on surface tension of molten silver S Ozawa, K Morohoshi, T Hibiya, H Fukuyama Journal of Applied Physics 107 (1), 2010 | 83 | 2010 |
| Normal spectral emissivity of undercooled liquid silicon H Kawamura, H Fukuyama, M Watanabe, T Hibiya Measurement Science and Technology 16 (2), 386, 2005 | 74 | 2005 |
| Influence of oxygen partial pressure on surface tension and its temperature coefficient of molten iron S Ozawa, S Suzuki, T Hibiya, H Fukuyama Journal of Applied Physics 109 (1), 2011 | 71 | 2011 |
| Flow instability of molten silicon in the Czochralski configuration K Kakimoto, M Eguchi, H Watanabe, T Hibiya Journal of crystal growth 102 (1-2), 16-20, 1990 | 66 | 1990 |
| Ordered structure in non-axisymmetric flow of silicon melt convection K Kakimoto, M Watanabe, M Eguchi, T Hibiya Journal of crystal growth 126 (2-3), 435-440, 1993 | 64 | 1993 |
| Flow and temperature field in molten silicon during Czochralski crystal growth in a cusp magnetic field M Watanabe, M Eguchi, T Hibiya Journal of crystal growth 193 (3), 402-412, 1998 | 55 | 1998 |
| Growth and characterization of liquid-phase epitaxial Bi-substituted iron garnet films for magneto-optic application T Hibiya, Y Morishige, J Nakashima Japanese journal of applied physics 24 (10R), 1316, 1985 | 54 | 1985 |
| In-situ observation of solid-liquid interface shape by X-ray radiography during silicon single crystal growth K Kakimoto, M Eguchi, H Watanabe, T Hibiya Journal of crystal growth 91 (4), 509-514, 1988 | 52 | 1988 |
| The baroclinic flow instability in rotating silicon melt M Watanabe, M Eguchi, K Kakimoto, Y Baros, T Hibiya Journal of crystal growth 128 (1-4), 288-292, 1993 | 49 | 1993 |
