Folgen
Brian R. Bennett
Brian R. Bennett
Washington-Liberty High School; formerly Naval Research Laboratory (NRL), ONR, and MIT
Bestätigte E-Mail-Adresse bei navy.mil - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Electrooptical effects in silicon
R Soref, B Bennett
IEEE journal of quantum electronics 23 (1), 123-129, 1987
34461987
Carrier-induced change in refractive index of InP, GaAs and InGaAsP
BR Bennett, RA Soref, JA Del Alamo
IEEE Journal of Quantum Electronics 26 (1), 113-122, 1990
13391990
Observation of spin injection at a ferromagnet-semiconductor interface
PR Hammar, BR Bennett, MJ Yang, M Johnson
Physical Review Letters 83 (1), 203, 1999
6751999
Robust electrical spin injection into a semiconductor heterostructure
BT Jonker, YD Park, BR Bennett, HD Cheong, G Kioseoglou, A Petrou
Physical Review B 62 (12), 8180, 2000
6592000
Antimonide-based compound semiconductors for electronic devices: A review
BR Bennett, R Magno, JB Boos, W Kruppa, MG Ancona
Solid-State Electronics 49 (12), 1875-1895, 2005
4332005
Kramers-Kronig analysis of electro-optical switching in silicon
RA Soref, BR Bennett
Integrated Optical Circuit Engineering IV 704, 32-37, 1987
2881987
Hybrid Hall effect device
M Johnson, BR Bennett, MJ Yang, MM Miller, BV Shanabrook
Applied Physics Letters 71 (7), 974-976, 1997
2451997
Evidence of a Hybridization Gap in``Semimetallic''InAs/GaSb Systems
MJ Yang, CH Yang, BR Bennett, BV Shanabrook
Physical review letters 78 (24), 4613, 1997
2101997
Auger coefficients in type-II quantum wells
JR Meyer, CL Felix, WW Bewley, I Vurgaftman, EH Aifer, LJ Olafsen, ...
Applied physics letters 73 (20), 2857-2859, 1998
2061998
Surface reconstruction phase diagrams for InAs, AlSb, and GaSb
AS Bracker, MJ Yang, BR Bennett, JC Culbertson, WJ Moore
Journal of crystal growth 220 (4), 384-392, 2000
1982000
Photoluminescence studies of self‐assembled InSb, GaSb, and AlSb quantum dot heterostructures
ER Glaser, BR Bennett, BV Shanabrook, R Magno
Applied physics letters 68 (25), 3614-3616, 1996
1921996
Molecular beam epitaxial growth of InSb, GaSb, and AlSb nanometer‐scale dots on GaAs
BR Bennett, R Magno, BV Shanabrook
Applied physics letters 68 (4), 505-507, 1996
1861996
AlSb/InAs HEMT's for low-voltage, high-speed applications
JB Boos, W Kruppa, BR Bennett, D Park, SW Kirchoefer, R Bass, ...
IEEE Transactions on electron devices 45 (9), 1869-1875, 1998
1691998
Nanostructure patterns written in III–V semiconductors by an atomic force microscope
R Magno, BR Bennett
Applied Physics Letters 70 (14), 1855-1857, 1997
1501997
Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
A Ali, HS Madan, AP Kirk, DA Zhao, DA Mourey, MK Hudait, RM Wallace, ...
Applied Physics Letters 97 (14), 2010
1422010
Mobility enhancement in strained p-InGaSb quantum wells
BR Bennett, MG Ancona, JB Boos, BV Shanabrook
Applied Physics Letters 91 (4), 2007
1262007
Optimization of the Interface and a High-Mobility GaSb pMOSFET
A Nainani, T Irisawa, Z Yuan, BR Bennett, JB Boos, Y Nishi, KC Saraswat
IEEE Transactions on Electron Devices 58 (10), 3407-3415, 2011
1232011
Electrorefraction and electroabsorption in inp, gaas, gasb, inas, and insb
B Bennett, R Soref
IEEE journal of quantum electronics 23 (12), 2159-2166, 1987
1131987
Metallic III-V (001) surfaces: Violations of the electron counting model
LJ Whitman, PM Thibado, SC Erwin, BR Bennett, BV Shanabrook
Physical review letters 79 (4), 693, 1997
1081997
Long‐Period Magnetotelluric Measurements Near the Central California Coast: A Land‐Locked View of the Conductivity Structure Under the Pacific Ocean
RL Mackie, BR Bennett, TR Madden
Geophysical Journal 95 (1), 181-194, 1988
981988
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20