| The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices AN Nazarov, SI Tiagulskyi, IP Tyagulskyy, VS Lysenko, L Rebohle, ... Journal of Applied Physics 107 (12), 2010 | 41 | 2010 |
| Optical and electrical characterization of CuO/ZnO heterojunctions R Yatskiv, S Tiagulskyi, J Grym, J Vaniš, N Bašinová, P Horak, A Torrisi, ... Thin Solid Films 693, 137656, 2020 | 37 | 2020 |
| Influence of crystallographic orientation on Schottky barrier formation in gallium oxide R Yatskiv, S Tiagulskyi, J Grym Journal of Electronic Materials 49 (9), 5133-5137, 2020 | 22 | 2020 |
| Anomalous wear-out phenomena of europium-implanted light emitters based on a metal-oxide-semiconductor structure L Rebohle, J Lehmann, S Prucnal, A Nazarov, I Tyagulskii, S Tyagulskii, ... Journal of Applied Physics 106 (12), 2009 | 18 | 2009 |
| Methane as a novel doping precursor for deposition of highly conductive ZnO thin films by magnetron sputtering AV Vasin, AV Rusavsky, EG Bortchagovsky, YV Gomeniuk, AS Nikolenko, ... Vacuum 174, 109199, 2020 | 17 | 2020 |
| Electrical and optical properties of rectifying ZnO homojunctions fabricated by wet chemistry methods R Yatskiv, S Tiagulskyi, J Grym, O Cernohorsky physica status solidi (a) 215 (2), 1700592, 2018 | 14 | 2018 |
| Impedance spectroscopy of single graphene layer at gas adsorption VA Skryshevsky, YS Milovanov, IV Gavrilchenko, SI Tiagulskyi, ... physica status solidi (a) 212 (9), 1941-1945, 2015 | 14 | 2015 |
| Enhancement of carrier mobility in thin Ge layer by Sn co-doping S Prucnal, F Liu, Y Berencén, L Vines, L Bischoff, J Grenzer, S Andric, ... Semiconductor Science and Technology 31 (10), 105012, 2016 | 13 | 2016 |
| Highly rectifying heterojunctions formed by annealed ZnO nanorods on GaN substrates S Tiagulskyi, R Yatskiv, H Faitová, Š Kučerová, D Roesel, J Vaniš, J Grym, ... Nanomaterials 10 (3), 508, 2020 | 10 | 2020 |
| Electrical properties of nanoscale pn heterojunctions formed between a single ZnO nanorod and GaN substrate S Tiagulskyi, R Yatskiv, H Faitova, Š Kučerová, J Vaniš, J Grym Materials Science in Semiconductor Processing 107, 104808, 2020 | 9 | 2020 |
| Characterization of graphite/ZnO Schottky barriers formed on polar and nonpolar ZnO surfaces R Yatskiv, S Tiagulskyi, J Grym physica status solidi (a) 216 (2), 1800734, 2019 | 8 | 2019 |
| Tunable visible emission in nanostructured thin films and bulk ZnO R Yatskiv, J Grym, Š Kučerová, S Tiagulskyi, O Černohorský, N Bašinová, ... Journal of Sol-Gel Science and Technology 102 (2), 447-453, 2022 | 7 | 2022 |
| Influence of surface polarity on optoelectronic properties of PEDOT: PSS/ZnO hybrid heterojunctions R Yatskiv, J Grym, S Tiagulskyi, N Bašinová physica status solidi (a) 218 (6), 2000612, 2021 | 7 | 2021 |
| Electrical Characterization of Graphite/InP Schottky Diodes by I–V–T and C–V Methods S Tiagulskyi, R Yatskiv, J Grym Journal of Electronic Materials 47, 4950-4954, 2018 | 7 | 2018 |
| RF plasma treatment of shallow ion-implanted layers of germanium PN Okholin, VI Glotov, AN Nazarov, VO Yuchymchuk, VP Kladko, ... Materials Science in Semiconductor Processing 42, 204-209, 2016 | 7 | 2016 |
| Influence of growth polarity switching on the optical and electrical properties of GaN/AlGaN nanowire LEDs A Reszka, KP Korona, S Tiagulskyi, H Turski, U Jahn, S Kret, R Bożek, ... Electronics 10 (1), 45, 2020 | 5 | 2020 |
| Micro-Raman spectroscopy and electrical conductivity of graphene layer on SiO2 dielectric subjected to electron beam irradiation OM Slobodian, SI Tiagulskyi, AS Nikolenko, Y Stubrov, YV Gomeniuk, ... Materials Research Express 5 (11), 116405, 2018 | 5 | 2018 |
| The high thermal conductivity of graphene prevents ZnO nanorod-graphene interface from degradation S Tiagulskyi, O Černohorský, N Bašinová, R Yatskiv, J Grym Materials Research Bulletin 164, 112286, 2023 | 3 | 2023 |
| Focused ion beam assisted prototyping of graphene/ZnO devices on Zn-polar and O-polar faces of ZnO bulk crystals S Tiagulskyi, R Yatskiv, H Faitová, O Černohorský, J Vaniš, J Grym Physica E: Low-dimensional Systems and Nanostructures 136, 115006, 2022 | 3 | 2022 |
| Electrical properties of nanoscale heterojunctions formed between GaN and ZnO nanorods S Tiagulskyi, R Yatskiv, J Grym, A Schenk, D Roesel, J Vanis, ... Proceedings of the 9th International Conference on Nanomaterials—Research …, 2017 | 3 | 2017 |
A.N.NazarovInstitute of Semiconductor Physics NASUBestätigte E-Mail-Adresse bei lab15.kiev.ua