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Blanca Biel
Blanca Biel
Dpto. Física Atómica, Molecular y Nuclear, Universidad de Granada
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Zitiert von
Zitiert von
Jahr
Tuning the conductance of single-walled carbon nanotubes by ion irradiation in the Anderson localization regime
C Gómez-Navarro, PJD Pablo, J Gómez-Herrero, B Biel, FJ Garcia-Vidal, ...
Nature materials 4 (7), 534-539, 2005
4592005
Charge transport in disordered graphene-based low dimensional materials
A Cresti, N Nemec, B Biel, G Niebler, F Triozon, G Cuniberti, S Roche
Nano Research 1, 361-394, 2008
3932008
Anomalous doping effects on charge transport in graphene nanoribbons
B Biel, X Blase, F Triozon, S Roche
Physical review letters 102 (9), 096803, 2009
3882009
Transport Length Scales in Disordered Graphene-Based Materials:<? format?> Strong Localization Regimes and Dimensionality Effects
A Lherbier, B Biel, YM Niquet, S Roche
Physical review letters 100 (3), 036803, 2008
2292008
Versatile synthesis and enlargement of functionalized distorted heptagon-containing nanographenes
IR Márquez, N Fuentes, CM Cruz, V Puente-Muñoz, L Sotorrios, ...
Chemical Science 8 (2), 1068-1074, 2017
1132017
Chemically induced mobility gaps in graphene nanoribbons: a route for upscaling device performances
B Biel, F Triozon, X Blase, S Roche
Nano letters 9 (7), 2725-2729, 2009
1102009
Schottky contacts on passivated GaAs (1 0 0) surfaces: barrier height and reactivity
T Kampen, A Schüller, DRT Zahn, B Biel, J Ortega, R Pérez, F Flores
Applied surface science 234 (1-4), 341-348, 2004
1032004
Quantum transport in graphene nanoribbons: Effects of edge reconstruction and chemical reactivity
SMM Dubois, A Lopez-Bezanilla, A Cresti, F Triozon, B Biel, JC Charlier, ...
ACS nano 4 (4), 1971-1976, 2010
962010
Anderson localization in carbon nanotubes: defect density and temperature effects
B Biel, FJ Garcia-Vidal, A Rubio, F Flores
Physical review letters 95 (26), 266801, 2005
922005
Adsorption of small inorganic molecules on a defective MoS 2 monolayer
C Gonzalez, B Biel, YJ Dappe
Physical Chemistry Chemical Physics 19 (14), 9485-9499, 2017
892017
Theoretical characterisation of point defects on a MoS2 monolayer by scanning tunnelling microscopy
C González, B Biel, YJ Dappe
Nanotechnology 27 (10), 105702, 2016
892016
Atomistic boron-doped graphene field-effect transistors: a route toward unipolar characteristics
P Marconcini, A Cresti, F Triozon, G Fiori, B Biel, YM Niquet, M Macucci, ...
ACS nano 6 (9), 7942-7947, 2012
842012
Operation and design of van der Waals tunnel transistors: A 3-D quantum transport study
J Cao, D Logoteta, S Özkaya, B Biel, A Cresti, MG Pala, D Esseni
IEEE Transactions on Electron Devices 63 (11), 4388-4394, 2016
452016
A potassium metal-organic framework based on perylene-3, 4, 9, 10-tetracarboxylate as sensing layer for humidity actuators
JM Seco, E San Sebastián, J Cepeda, B Biel, A Salinas-Castillo, ...
Scientific Reports 8 (1), 14414, 2018
422018
Ab initio study of transport properties in defected carbon nanotubes: an O (N) approach
B Biel, FJ Garcia-Vidal, A Rubio, F Flores
Journal of Physics: Condensed Matter 20 (29), 294214, 2008
392008
Anderson localization regime in carbon nanotubes: size dependent properties
F Flores, B Biel, A Rubio, FJ Garcia-Vidal, C Gomez-Navarro, P de Pablo, ...
Journal of Physics: Condensed Matter 20 (30), 304211, 2008
352008
Atomic-scale defects and electronic properties of a transferred synthesized MoS2 monolayer
ID Marion, D Čapeta, B Pielić, F Faraguna, A Gallardo, P Pou, B Biel, ...
Nanotechnology 29 (30), 305703, 2018
342018
Surface roughness scattering model for arbitrarily oriented silicon nanowires
IM Tienda-Luna, FG Ruiz, A Godoy, B Biel, F Gámiz
Journal of Applied Physics 110 (8), 2011
292011
Multi-Subband Ensemble Monte Carlo simulation of bulk MOSFETs for the 32 nm-node and beyond
C Sampedro, F Gámiz, A Godoy, R Valín, A García-Loureiro, N Rodríguez, ...
Solid-State Electronics 65, 88-93, 2011
242011
Reactivity Enhancement and Fingerprints of Point Defects on a MoS2 Monolayer Assessed by ab Initio Atomic Force Microscopy
C González, YJ Dappe, B Biel
The Journal of Physical Chemistry C 120 (30), 17115-17126, 2016
222016
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