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Zakhary Krasilnik, Z.F. Krasilnik, Z.F. Krasil'nik, Z. Krasilnik, Z. Krasil'nik
Zakhary Krasilnik, Z.F. Krasilnik, Z.F. Krasil'nik, Z. Krasilnik, Z. Krasil'nik
Институт физики микроструктур РАН, Институт прикладной физики РАН, Институт прикладной физики АН
Bestätigte E-Mail-Adresse bei ipmras.ru
Titel
Zitiert von
Zitiert von
Jahr
Photonic bound states in the continuum in Si structures with the self‐assembled Ge nanoislands
SA Dyakov, MV Stepikhova, AA Bogdanov, AV Novikov, DV Yurasov, ...
Laser & Photonics Reviews 15 (7), 2000242, 2021
612021
SiGe nanostructures with self-assembled islands for Si-based optoelectronics
ZF Krasilnik, AV Novikov, DN Lobanov, KE Kudryavtsev, AV Antonov, ...
Semiconductor science and technology 26 (1), 014029, 2010
582010
Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si (001) substrate
VY Aleshkin, NV Baidus, AA Dubinov, AG Fefelov, ZF Krasilnik, ...
Applied Physics Letters 109 (6), 2016
542016
Growth and photoluminescence of self-assembled islands obtained during the deposition of Ge on a strained SiGe layer
DN Lobanov, AV Novikov, NV Vostokov, YN Drozdov, AN Yablonskiy, ...
Optical Materials 27 (5), 818-821, 2005
502005
Light emission from Ge (Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various periods with and without cavities
MV Stepikhova, AV Novikov, AN Yablonskiy, MV Shaleev, DE Utkin, ...
Semiconductor Science and Technology 34 (2), 024003, 2019
372019
The effect of nitrogenation on the electrical properties of amorphous hydrogenated carbon layers
O Stenzel, M Vogel, S Pönitz, R Petrich, T Wallendorf, CV Borczyskowski, ...
physica status solidi (a) 140 (1), 179-188, 1993
371993
Towards the indium nitride laser: Obtaining infrared stimulated emission from planar monocrystalline InN structures
BA Andreev, KE Kudryavtsev, AN Yablonskiy, DN Lobanov, PA Bushuykin, ...
Scientific Reports 8 (1), 9454, 2018
362018
Strain-driven alloying: effect on sizes, shape and photoluminescence of GeSi/Si (001) self-assembled islands
AV Novikov, BA Andreev, NV Vostokov, YN Drozdov, ZF Krasilnik, ...
Materials Science and Engineering: B 89 (1-3), 62-65, 2002
322002
Gigantic uphill diffusion during self-assembled growth of Ge quantum dots on strained SiGe sublayers
MY Valakh, PM Lytvyn, AS Nikolenko, VV Strelchuk, ZF Krasilnik, ...
Applied Physics Letters 96 (14), 2010
302010
Erbium doped silicon single-and multilayer structures for light-emitting device and laser applications
ZF Krasilnik, BA Andreev, DI Kryzhkov, LV Krasilnikova, VP Kuznetsov, ...
Journal of materials research 21 (3), 574-583, 2006
292006
Carrier Recombination, Long‐Wavelength Photoluminescence, and Stimulated Emission in HgCdTe Quantum Well Heterostructures
V Rumyantsev, M Fadeev, V Aleshkin, N Kulikov, V Utochkin, N Mikhailov, ...
physica status solidi (b) 256 (6), 1800546, 2019
262019
Type II–type I conversion of GaAs/GaAsSb heterostructure energy spectrum under optical pumping
SV Morozov, DI Kryzhkov, AN Yablonsky, AV Antonov, DI Kuritsin, ...
Journal of Applied Physics 113 (16), 2013
212013
Photoluminescence of Ge (Si) self-assembled islands embedded in a tensile-strained Si layer
MV Shaleev, AV Novikov, AN Yablonskiy, YN Drozdov, DN Lobanov, ...
Applied Physics Letters 88 (1), 2006
202006
Effect of parameters of Ge (Si)/Si (001) self-assembled islands on their electroluminescence at room temperature
DN Lobanov, AV Novikov, KE Kudryavtsev, DV Shengurov, YN Drozdov, ...
Semiconductors 43, 313-317, 2009
192009
Electrically pumped InGaAs/GaAs quantum well microdisk lasers directly grown on Si (100) with Ge/GaAs buffer
NV Kryzhanovskaya, EI Moiseev, YS Polubavkina, MV Maximov, ...
Optics Express 25 (14), 16754-16760, 2017
182017
Elastic strains and compound of self-organized nanoislands of GeSi at Si (001)
NV Vostokov, SA Gusev, IV Dolgov, N Drozdov Yu, ZF Krasilnik, ...
Russian Phys. Semicond 34 (1), 8-12, 2000
182000
Electroluminescence and photoconductivity of GeSi heterostructures with self-assembled islands in the wavelength range 1.3–1.55 μm
DN Lobanov, AV Novikov, KE Kudryavtsev, AN Yablonskiy, AV Antonov, ...
Physica E: Low-dimensional Systems and Nanostructures 41 (6), 935-938, 2009
172009
The effect of local atomic structure on the optical properties of GeSi self-assembled islands buried in silicon matrix
IN Demchenko, K Lawniczak-Jablonska, S Kret, AV Novikov, JY Laval, ...
Nanotechnology 18 (11), 115711, 2007
162007
Intense photoluminescence from Ge (Si) self-assembled islands embedded in a tensile-strained Si layer
AV Novikov, MV Shaleev, AN Yablonskiy, OA Kuznetsov, YN Drozdov, ...
Semiconductor science and technology 22 (1), S29, 2006
162006
Effect of irradiation on the luminescence properties of low-dimensional SiGe/Si (001) heterostructures
AV Novikov, AN Yablonskiy, VV Platonov, SV Obolenskiy, DN Lobanov, ...
Semiconductors 44, 329-334, 2010
152010
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