| Heteroepitaxial diamond on iridium: New insights on domain formation JCA N. Vaissiere, S. Saada, M. Bouttemy, A. Etcheberry Diamond & Related Materials 36, 16-25, 2013 | 39 | 2013 |
| Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems C Mukherjee, M Deng, V Nodjiadjim, M Riet, C Mismer, D Guendouz, ... Applied Sciences 11 (5), 2393, 2021 | 23 | 2021 |
| Mosaicity, dislocations and strain in heteroepitaxial diamond grown on iridium H Bensalah, I Stenger, G Sakr, J Barjon, R Bachelet, A Tallaire, J Achard, ... Diamond and Related Materials 66, 188-195, 2016 | 22 | 2016 |
| AlGaInAs multi-quantum well lasers on silicon-on-insulator photonic integrated circuits based on InP-seed-bonding and epitaxial regrowth C Besancon, D Néel, D Make, JM Ramírez, G Cerulo, N Vaissiere, ... Applied Sciences 12 (1), 263, 2021 | 20 | 2021 |
| Micro-transfer-printed narrow-linewidth III-V-on-Si double laser structure with a combined 110 nm tuning range E Soltanian, G Muliuk, S Uvin, D Wang, G Lepage, P Verheyen, ... Optics Express 30 (22), 39329-39339, 2022 | 19 | 2022 |
| Low-Threshold, High-Power On-Chip Tunable III-V/Si Lasers with Integrated Semiconductor Optical Amplifiers JM Ramírez, P Fanneau de la Horie, JG Provost, S Malhouitre, D Néel, ... Applied Sciences 11 (23), 11096, 2021 | 16 | 2021 |
| Comparison of AlGaInAs-Based Laser Behavior Grown on Hybrid InP-SiO₂/Si and InP Substrates C Besancon, G Cerulo, D Néel, N Vaissiere, D Make, F Fournel, C Dupre, ... IEEE Photonics Technology Letters 32 (8), 469-472, 2020 | 13 | 2020 |
| Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO2/Si Substrate C Besancon, N Vaissiere, C Dupre, F Fournel, L Sanchez, C Jany, ... physica status solidi (a) 217 (3), 1900523, 2020 | 12 | 2020 |
| Characterization of the charge‐carrier transport properties of IIa‐Tech SC diamond for radiation detection applications M Pomorski, C Delfaure, N Vaissiere, H Bensalah, J Barjon, ... physica status solidi (a) 212 (11), 2553-2558, 2015 | 12 | 2015 |
| Low-κ, narrow linewidth III-V-on-SOI distributed feedback lasers with backside sampled Bragg gratings JM Ramirez, A Souleiman, PF de la Horie, D Neel, N Vaissiere, V Ramez, ... Optics Express 30 (20), 36717-36726, 2022 | 10 | 2022 |
| Low temperature epitaxial growth of boron-doped silicon thin films M Chrostowski, R Peyronnet, W Chen, N Vaissiere, J Alvarez, E Drahi AIP Conference Proceedings 1999 (1), 2018 | 10 | 2018 |
| Plasma-enhanced chemical vapor deposition epitaxy of Si on GaAs for tunnel junction applications in tandem solar cells G Hamon, N Vaissiere, R Cariou, R Lachaume, J Alvarez, W Chen, ... Journal of Photonics for Energy 7 (2), 022504-022504, 2017 | 10 | 2017 |
| Hybrid InP-SiN microring-resonator based tunable laser with high output power and narrow linewidth for high capacity coherent systems C Calò, K Benyahya, H Mardoyan, P Charbonnier, D Sacchetto, M Zervas, ... Optical Fiber Communication Conference, Tu3D. 3, 2022 | 9 | 2022 |
| Heterogeneous tunable III-V-on-silicon-nitride mode-locked laser emitting wide optical spectra M Billet, S Cuyvers, S Poelman, A Hermans, S Seema Saseendra, ... Photonics Research 12 (3), A21-A27, 2024 | 7 | 2024 |
| Ultra Compact High responsivity Photodiodes for> 100 Gbaud Applications C Caillaud, H Bertin, A Bobin, R Gnanamani, N Vaissiere, F Pommereau, ... 2021 European Conference on Optical Communication (ECOC), 1-4, 2021 | 7 | 2021 |
| As-grown InGaAsN subcells for multijunction solar cells by molecular beam epitaxy M Levillayer, A Arnoult, I Massiot, S Duzellier, T Nuns, C Inguimbert, ... IEEE Journal of Photovoltaics 11 (5), 1271-1277, 2021 | 7 | 2021 |
| III-V-on-silicon nitride narrow-linewidth tunable laser based on micro-transfer printing B Pan, J Bourderionnet, V Billault, A Brignon, S Dwivedi, M Dahlem, ... 2023 Optical Fiber Communications Conference and Exhibition (OFC), 1-3, 2023 | 6 | 2023 |
| Synthèse de films de diamant de haute qualité cristalline pour la réalisation de dosimètres pour la radiothérapie N Vaissière École normale supérieure de Cachan-ENS Cachan, 2014 | 6 | 2014 |
| Ultrathin Ge epilayers on Si produced by low-temperature PECVD acting as virtual substrates for III-V/c-Si tandem solar cells M Ghosh, P Bulkin, F Silva, EV Johnson, I Florea, D Funes-Hernando, ... Solar Energy Materials and Solar Cells 236, 111535, 2022 | 5 | 2022 |
| Laser Array Covering 155 nm Wide Spectral Band Achieved by Selective Area Growth on Silicon Wafer C Besancon, P Fanneau, D Néel, G Cerulo, N Vaissiere, D Make, ... 2020 European Conference on Optical Communications (ECOC), 1-4, 2020 | 4 | 2020 |
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