| The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs BK Jebalin, AS Rekh, P Prajoon, NM Kumar, D Nirmal Microelectronics Journal 46 (12), 1387-1391, 2015 | 55 | 2015 |
| Subthreshold performance of gate engineered FinFET devices and circuit with high-k dielectrics D Nirmal, P Vijayakumar, DM Thomas, BK Jebalin, N Mohankumar Microelectronics reliability 53 (3), 499-504, 2013 | 50 | 2013 |
| Unique model of polarization engineered AlGaN/GaN based HEMTs for high power applications BK Jebalin, AS Rekh, P Prajoon, D Godwinraj, NM Kumar, D Nirmal Superlattices and Microstructures 78, 210-223, 2015 | 46 | 2015 |
| Subthreshold analysis of nanoscale FinFETs for ultra low power application using high-k materials D Nirmal, P Vijayakumar, PPC Samuel, BK Jebalin, N Mohankumar International Journal of Electronics 100 (6), 803-817, 2013 | 39 | 2013 |
| Nanoscale tri gate MOSFET for ultra low power applications using high-k dielectrics D Nirmal, PV Kumar, D Joy, BK Jebalin, NM Kumar 2013 IEEE 5th International Nanoelectronics Conference (INEC), 12-19, 2013 | 37 | 2013 |
| Advances in neuromorphic devices for the hardware implementation of neuromorphic computing systems for future artificial intelligence applications: A critical review J Ajayan, D Nirmal, BKJ IV, S Sreejith Microelectronics Journal 130, 105634, 2022 | 21 | 2022 |
| A comprehensive review of AlGaN/GaN High electron mobility transistors: Architectures and field plate techniques for high power/high frequency applications JSR Kumar, HV Du John, BKJ IV, J Ajayan, D Nirmal Microelectronics Journal 140, 105951, 2023 | 10 | 2023 |
| A Review of Nanoscale Channel and Gate Engineered FINFETs for VLSI Mixed Signal Applications Using Zirconium-di-Oxide Dielectrics. D Nirmal, PV Kumar, K Shruti, BK Jebalin, N Mohankumar Journal of Engineering Science & Technology Review 7 (2), 2014 | 9 | 2014 |
| Investigation of variable field plate length in GaN HEMTon SiC substrate for MMIC applications G Binola K Jebalin I.V: Gifta, S Angen, P Prajoon, D Nirmal Microelectronics Journal, 105866, 2023 | 8 | 2023 |
| Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone IVBK Jebalin, SA Franklin, G Gifta, P Prajoon, D Nirmal Microelectronics Journal 147, 106158, 2024 | 5 | 2024 |
| A new Vertical C-shaped Silicon Channel Nanosheet FET with Stacked High-K Dielectrics for Low Power Applications BKJ IV, J Ajayan, SA Franklin, D Nirmal Silicon, 1-12, 2024 | 1 | 2024 |
| InGaAs based gratings for UV–VIS spectrometer in prospective mRNA vaccine research A Ravindran, D Nirmal, BK Jebalin. I. V, KP Pinkymol, P Prajoon, J Ajayan Optical and Quantum Electronics 54 (9), 555, 2022 | 1 | 2022 |
| Influence of Doping Engineering in 1 μm Drift Layer Quasi‐Vertical Fin Field‐Effect Transistor for Achieving> 139 V Breakdown Voltage A Michel, BKJ IV, SA Franklin, S Juliet Rani, D Nirmal physica status solidi (a) 221 (20), 2400137, 2024 | | 2024 |
| Light Extraction Efficiency Improvement Techniques in Light-Emitting Diodes M Manikandan, G Dhivyasri, D Nirmal, JA Prathap, BK Jebalin Organic and Inorganic Light Emitting Diodes, 117-132, 2023 | | 2023 |
| Analytical Modelling and Simulation of Graphene Based Biosensor to Detect SARS-COV-2 from Aerosal Particles G Gifta, IVBK Jebalin, SA Franklin, DGN Rani, D Nirmal ECS Journal of Solid State Science and Technology 12 (5), 057012, 2023 | | 2023 |
| About Andrei Grebennikov BKJ IV, D Nirmal, L Li, H Ji Microelectronics Journal 138, 105866, 2023 | | 2023 |
| 253 GHz fT Graded‐Channel AlGaN/GaN High‐Electron‐Mobility Transistors with New Cliff Barrier for Millimeter Wave High‐Frequency Applications S Angen Franklin, BKJ IV, S Chander, S Juliet Rani, D Nirmal physica status solidi (a), 2400552, 0 | | |
