| Highly Enhanced Photoresponsivity of a Monolayer WSe2 Photodetector with Nitrogen-Doped Graphene Quantum Dots DA Nguyen, HM Oh, NT Duong, S Bang, SJ Yoon, MS Jeong ACS applied materials & interfaces 10 (12), 10322-10329, 2018 | 136 | 2018 |
| Modulating the Functions of MoS2/MoTe2 van der Waals Heterostructure via Thickness Variation NT Duong, J Lee, S Bang, C Park, SC Lim, MS Jeong ACS nano 13 (4), 4478-4485, 2019 | 104 | 2019 |
| Augmented quantum yield of a 2D monolayer photodetector by surface plasmon coupling S Bang, NT Duong, J Lee, YH Cho, HM Oh, H Kim, SJ Yun, C Park, ... Nano letters 18 (4), 2316-2323, 2018 | 98 | 2018 |
| Modulation of Junction Modes in SnSe2/MoTe2 Broken-Gap van der Waals Heterostructure for Multifunctional Devices NT Duong*, J Lee*, S Bang, C Park, DA Nguyen, H Jeon, J Jang, HM Oh, ... Nano Letters 20 (4), 2370-2377, 2020 | 86 | 2020 |
| Photovoltaic effect in a few-layer ReS 2/WSe 2 heterostructure C Park, NT Duong, S Bang, DA Nguyen, HM Oh, MS Jeong Nanoscale 10 (43), 20306-20312, 2018 | 41 | 2018 |
| Patterning of type-II Dirac semimetal PtTe2 for optimized interface of tellurene optoelectronic device DA Nguyen, DY Park, J Lee, NT Duong, C Park, DH Nguyen, TS Le, ... Nano Energy 86, 106049, 2021 | 33 | 2021 |
| Achieving direct electrophoretically deposited highly stable polymer induced CsPbBr3 colloidal nanocrystal films for high-performance optoelectronics AV Fulari, NT Duong, DA Nguyen, Y Jo, S Cho, DY Kim, NK Shrestha, ... Chemical Engineering Journal 433, 133809, 2022 | 26 | 2022 |
| Enhancing Memory Window Efficiency of Ferroelectric Transistor for Neuromorphic Computing via Two‐Dimensional Materials Integration H Xiang, YC Chien, L Li, H Zheng, S Li, NT Duong, Y Shi, KW Ang Advanced Functional Materials 33 (42), 2304657, 2023 | 25 | 2023 |
| Gate-controlled MoTe2 homojunction for sub-thermionic subthreshold swing tunnel field-effect transistor NT Duong, C Park, DH Nguyen, PH Nguyen, TU Tran, DY Park, J Lee, ... Nano Today 40, 101263, 2021 | 25 | 2021 |
| Parameter control for enhanced peak-to-valley current ratio in a MoS 2/MoTe 2 van der Waals heterostructure NT Duong, S Bang, SM Lee, DX Dang, DH Kuem, J Lee, MS Jeong, ... Nanoscale 10 (26), 12322-12329, 2018 | 25 | 2018 |
| Gate tunable photoresponse of a two-dimensional pn junction for high performance broadband photodetector TU Tran, DA Nguyen, NT Duong, DY Park, DH Nguyen, PH Nguyen, ... Applied Materials Today 26, 101285, 2022 | 24 | 2022 |
| Contact Engineering of Layered MoS2 via Chemically Dipping Treatments S Bang, S Lee, A Rai, NT Duong, I Kawk, S Wolf, CH Chung, SK Banerjee, ... Advanced Functional Materials 30 (16), 2000250, 2020 | 23 | 2020 |
| Dynamic Ferroelectric Transistor‐Based Reservoir Computing for Spatiotemporal Information Processing NT Duong, YC Chien, H Xiang, S Li, H Zheng, Y Shi, KW Ang Advanced Intelligent Systems 5 (6), 2300009, 2023 | 20 | 2023 |
| Encapsulation of a Monolayer WSe2 Phototransistor with Hydrothermally Grown ZnO Nanorods KN Lee, S Bang, NT Duong, SJ Yun, DY Park, J Lee, YC Choi, MS Jeong ACS applied materials & interfaces 11 (22), 20257-20264, 2019 | 17 | 2019 |
| Large‐Area MoS2 via Colloidal Nanosheet Ink for Integrated Memtransistor DA Nguyen, DY Park, NT Duong, KN Lee, H Im, H Yang, MS Jeong Small Methods 5 (11), 2100558, 2021 | 13 | 2021 |
| A MoS2 Hafnium Oxide Based Ferroelectric Encoder for Temporal‐Efficient Spiking Neural Network YC Chien, H Xiang, Y Shi, NT Duong, S Li, KW Ang Advanced Materials 35 (2), 2204949, 2023 | 12 | 2023 |
| Suppressing Ambipolar Characteristics of WSe2 Field Effect Transistors Using Graphene Oxide HM Oh, C Park, S Bang, SJ Yun, NT Duong, MS Jeong Advanced Electronic Materials 5 (2), 1800608, 2019 | 10 | 2019 |
| Coupled Ferroelectric‐Photonic Memory in a Retinomorphic Hardware for In‐Sensor Computing NT Duong, Y Shi, S Li, YC Chien, H Xiang, H Zheng, P Li, L Li, Y Wu, ... Advanced Science 11 (12), 2303447, 2024 | 8 | 2024 |
| A Dynamic Memory for Reservoir Computing Utilizing Ion Migration in CuInP2S6 Y Wu, NT Duong, YC Chien, S Liu, KW Ang Advanced Electronic Materials, 2300481, 2023 | 5 | 2023 |
| Carrier transport through near-ideal interface for WSe2 van der Waals homojunction diode J Lee, NT Duong, DY Park, CH Park, BG Jeong, MS Jeong Applied Surface Science 542, 148499, 2021 | 4 | 2021 |
Munseok JeongDepartment of Physics, Hanyang UniversityBestätigte E-Mail-Adresse bei hanyang.ac.kr
