Folgen
Ron Schrimpf
Ron Schrimpf
Professor of Electrical Engineering, Vanderbilt University
Bestätigte E-Mail-Adresse bei vanderbilt.edu
Titel
Zitiert von
Zitiert von
Jahr
Charge collection and charge sharing in a 130 nm CMOS technology
OA Amusan, AF Witulski, LW Massengill, BL Bhuva, PR Fleming, ML Alles, ...
IEEE Transactions on nuclear science 53 (6), 3253-3258, 2006
4912006
Response of advanced bipolar processes to ionizing radiation
EW Enlow, RL Pease, W Combs, RD Schrimpf, RN Nowlin
IEEE transactions on nuclear science 38 (6), 1342-1351, 1991
4151991
Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates
DM Fleetwood, SL Kosier, RN Nowlin, RD Schrimpf, RA Reber, M DeLaus, ...
IEEE Transactions on Nuclear Science 41 (6), 1871-1883, 1994
3771994
Physical model for enhanced interface-trap formation at low dose rates
SN Rashkeev, CR Cirba, DM Fleetwood, RD Schrimpf, SC Witczak, ...
IEEE Transactions on Nuclear Science 49 (6), 2650-2655, 2002
2982002
Monte Carlo simulation of single event effects
RA Weller, MH Mendenhall, RA Reed, RD Schrimpf, KM Warren, ...
IEEE Transactions on Nuclear Science 57 (4), 1726-1746, 2010
2932010
Defect generation by hydrogen at the Si-SiO2 interface
SN Rashkeev, DM Fleetwood, RD Schrimpf, ST Pantelides
Physical review letters 87 (16), 165506, 2001
2492001
Charge separation for bipolar transistors
SL Kosier, RD Schrimpf, RN Nowlin, DM Fleetwood, M DeLaus, RL Pease, ...
IEEE Transactions on Nuclear Science 40 (6), 1276-1285, 1993
2401993
Structure, Properties, and Dynamics of Oxygen Vacancies in Amorphous SiO2
ZY Lu, CJ Nicklaw, DM Fleetwood, RD Schrimpf, ST Pantelides
Physical review letters 89 (28), 285505, 2002
2382002
ELDRS in bipolar linear circuits: A review
RL Pease, RD Schrimpf, DM Fleetwood
2008 European Conference on Radiation and Its Effects on Components and …, 2008
2362008
Impact of low-energy proton induced upsets on test methods and rate predictions
BD Sierawski, JA Pellish, RA Reed, RD Schrimpf, KM Warren, RA Weller, ...
IEEE Transactions on Nuclear Science 56 (6), 3085-3092, 2009
2332009
Characterization of digital single event transient pulse-widths in 130-nm and 90-nm CMOS technologies
B Narasimham, BL Bhuva, RD Schrimpf, LW Massengill, MJ Gadlage, ...
IEEE Transactions on Nuclear Science 54 (6), 2506-2511, 2007
2312007
Single event transient pulse widths in digital microcircuits
MJ Gadlage, RD Schrimpf, JM Benedetto, PH Eaton, DG Mavis, M Sibley, ...
IEEE transactions on nuclear science 51 (6), 3285-3290, 2004
2232004
Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices
DM Fleetwood, HD Xiong, ZY Lu, CJ Nicklaw, JA Felix, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 49 (6), 2674-2683, 2002
2122002
Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors
X Hu, AP Karmarkar, B Jun, DM Fleetwood, RD Schrimpf, RD Geil, ...
IEEE Transactions on Nuclear Science 50 (6), 1791-1796, 2003
2042003
The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM
KM Warren, RA Weller, MH Mendenhall, RA Reed, DR Ball, CL Howe, ...
IEEE transactions on nuclear science 52 (6), 2125-2131, 2005
2032005
Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides
DM Fleetwood, LC Riewe, JR Schwank, SC Witczak, RD Schrimpf
IEEE Transactions on Nuclear Science 43 (6), 2537-2546, 1996
2021996
Trends in the total-dose response of modern bipolar transistors
RN Nowlin, EW Enlow, RD Schrimpf, WE Combs
IEEE Transactions on Nuclear Science 39 (6), 2026-2035, 1992
1981992
Radiation effects and soft errors in integrated circuits and electronic devices
RD Schrimpf, DM Fleetwood
World Scientific, 2004
1922004
The structure, properties, and dynamics of oxygen vacancies in amorphous SiO2
CJ Nicklaw, ZY Lu, DM Fleetwood, RD Schrimpf, ST Pantelides
IEEE Transactions on Nuclear Science 49 (6), 2667-2673, 2002
1882002
Reactions of hydrogen with Si-SiO2 interfaces
ST Pantelides, SN Rashkeev, R Buczko, DM Fleetwood, RD Schrimpf
IEEE Transactions on Nuclear Science 47 (6), 2262-2268, 2000
1852000
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20