| High power density AlGaAs/InGaAs/GaAs PHEMTs using an optimised manufacturing process for Ka-band applications SJ Cho, C Wang, NY Kim Microelectronic engineering 113, 11-19, 2014 | 48 | 2014 |
| Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer … JW Roberts, PR Chalker, KB Lee, PA Houston, SJ Cho, IG Thayne, ... Applied Physics Letters 108 (7), 2016 | 20 | 2016 |
| SU-8-based structural material for microelectronic processing applications C Wang, SJ Cho, NY Kim Materials and manufacturing processes 28 (8), 947-952, 2013 | 20 | 2013 |
| Effects of double passivation for optimize DC properties in gamma-gate AlGaN/GaN high electron mobility transistor by plasma enhanced chemical vapor deposition SJ Cho, C Wang, NY Kim Thin Solid Films 520 (13), 4455-4458, 2012 | 15 | 2012 |
| Optimization of ohmic contact metallization process for AlGaN/GaN high electron mobility transistor C Wang, SJ Cho, NY Kim Transactions on Electrical and Electronic Materials 14 (1), 32-35, 2013 | 12 | 2013 |
| SiC backside source grounding process for AlGaN/GaN HEMT by physical dicing method C Wang, WS Lee, SJ Cho, NY Kim Electronics letters 48 (7), 405-406, 2012 | 10 | 2012 |
| A high-power Ka-band power amplifier design based on GaAs P-HEMT technology for VSAT ODU applications DZ Li, C Wang, WC Huang, R Krishna, SJ Cho, B Shrestha, GI Kyung, ... 2009 3rd IEEE International Symposium on Microwave, Antenna, Propagation and …, 2009 | 10 | 2009 |
| Analysis and optimisation of ohmic contact resistance and surface morphology of a Ta-based diffusion barrier layer in AlGaN/GaN HEMTs on Si (1 1 1) substrates SJ Cho, C Wang, NY Kim Solid-state electronics 89, 85-92, 2013 | 9 | 2013 |
| Comparison of SiO2-based double passivation scheme by e-beam evaporation and PECVD for surface passivation and gate oxide in AlGaN/GaN HEMTs C Wang, SJ Cho, NY Kim Microelectronic engineering 109, 24-27, 2013 | 9 | 2013 |
| A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor SJ Cho, JW Roberts, I Guiney, X Li, G Ternent, K Floros, CJ Humphreys, ... Microelectronic Engineering 147, 277-280, 2015 | 8 | 2015 |
| Impact of stress in ICP‐CVD SiNx passivation films on the leakage current in AlGaN/GaN HEMTs SJ Cho, X Li, I Guiney, K Floros, D Hemakumara, DJ Wallis, C Humphreys, ... Electronics Letters 54 (15), 947-949, 2018 | 7 | 2018 |
| A novel manufacturing process of AlGaN/GaN HEMT for X-band high-power application on Si (111) substrate C Wang, RK Maharjan, SJ Cho, NY Kim 2012 Asia Pacific Microwave Conference Proceedings, 484-486, 2012 | 7 | 2012 |
| Nano-scale surface morphology optimization of the ohmic contacts and electrical properties of AlGaN/GaN high electron mobility transistors using a rapid thermal annealing … SJ Cho, C Wang, NY Kim Thin solid films 557, 262-267, 2014 | 6 | 2014 |
| High-luminance and high-efficiency multi-chip light-emitting diode array packaging platform with nanoscale anodized aluminum oxide on silicon substrate C Wang, SJ Cho, NY Kim Thin solid films 557, 346-350, 2014 | 6 | 2014 |
| A novel method for the fabrication of AlGaN/GaN HEMTs on Si (111) substrates C Wang, SJ Cho, WS Lee, NY Kim The International Journal of Advanced Manufacturing Technology 67, 1491-1500, 2013 | 6 | 2013 |
| A novel spiral meander spurline resonator and its implementation to a low‐phase noise oscillator SJ Cho, NY Kim Microwave and Optical Technology Letters 53 (10), 2258-2262, 2011 | 6 | 2011 |
| An optimized 0.1 um T-gate AlGaAs/InGaAs/GaAs PHEMT power amplifier MMIC for Ka-band applications SJ Cho, C Wang, RK Maharjan, NY Kim 2012 Asia Pacific Microwave Conference Proceedings, 4-6, 2012 | 5 | 2012 |
| Band line-up investigation of atomic layer deposited TiAlO and GaAlO on GaN P Das, LAH Jones, JT Gibbon, VR Dhanak, T Partida-Manzanera, ... ECS Journal of Solid State Science and Technology 9 (6), 063003, 2020 | 4 | 2020 |
| Dual barrier InAlN/AlGaN/GaN‐on‐silicon high‐electron‐mobility transistors with Pt‐and Ni‐based gate stacks K Floros, X Li, I Guiney, SJ Cho, D Hemakumara, DJ Wallis, E Wasige, ... physica status solidi (a) 214 (8), 1600835, 2017 | 3 | 2017 |
| Band Line-up of High-k Oxides on GaN IZ Mitrovic, P Das, L Jones, J Gibbon, VR Dhanak, R Mahapatra, ... ECS Transactions 97 (1), 67, 2020 | 2 | 2020 |
