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Ahmet S. Ozcan
Ahmet S. Ozcan
Semiotic AI
Bestätigte E-Mail-Adresse bei semiotic.ai
Titel
Zitiert von
Zitiert von
Jahr
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
J Bruley, JO Chu, KL Lee, AS Ozcan, PM Solomon, JB Yau
US Patent 10,269,714, 2019
3672019
Sharp reduction of contact resistivities by effective Schottky barrier lowering with silicides as diffusion sources
Z Zhang, F Pagette, C D'emic, B Yang, C Lavoie, Y Zhu, M Hopstaken, ...
IEEE Electron Device Letters 31 (7), 731-733, 2010
3112010
An off-normal fibre-like texture in thin films on single-crystal substrates
C Detavernier, AS Özcan, J Jordan-Sweet, EA Stach, J Tersoff, FM Ross, ...
Nature 426 (6967), 641-645, 2003
2302003
Real-time x-ray studies of Mo-seeded Si nanodot formation during ion bombardment
G Ozaydin, AS Özcan, Y Wang, KF Ludwig, H Zhou, RL Headrick, ...
Applied Physics Letters 87 (16), 2005
1562005
Wafer-scale power delivery
CE Cox, H Huels, A Kumar, XH Liu, AS Ozcan, WW Wilcke
US Patent 10,546,809, 2020
91*2020
Adsorption kinetics and isotherms of anionic dye of reactive blue 19 from aqueous solutions onto DTMA-sepiolite
A Ozcan, AS Ozcan, O Gok
Hazardous Materials and Wastewater—Treatment, Removal and Analysis, 2007
602007
Ultra low contact resistivities for CMOS beyond 10-nm node
Z Zhang, SO Koswatta, SW Bedell, A Baraskar, M Guillorn, ...
IEEE electron device letters 34 (6), 723-725, 2013
542013
Strained Si channel MOSFETs with embedded silicon carbon formed by solid phase epitaxy
Y Liu, O Gluschenkov, J Li, A Madan, A Ozcan, B Kim, T Dyer, ...
2007 IEEE Symposium on VLSI Technology, 44-45, 2007
542007
Wavelength tunability of ion-bombardment-induced ripples on sapphire
H Zhou, Y Wang, L Zhou, RL Headrick, AS Özcan, Y Wang, G Özaydin, ...
Physical Review B—Condensed Matter and Materials Physics 75 (15), 155416, 2007
542007
Challenges of nickel silicidation in CMOS technologies
N Breil, C Lavoie, A Ozcan, F Baumann, N Klymko, K Nummy, B Sun, ...
Microelectronic Engineering 137, 79-87, 2015
532015
Complex and incommensurate ordering in Al0. 72Ga0. 28N thin films grown by plasma-assisted molecular beam epitaxy
Y Wang, AS Özcan, KF Ludwig, A Bhattacharyya, TD Moustakas, L Zhou, ...
Applied physics letters 88 (18), 2006
472006
Filopodia: a rapid structural plasticity substrate for fast learning
AS Ozcan
Frontiers in synaptic neuroscience 9, 12, 2017
462017
Contacts in advanced CMOS: History and emerging challenges
C Lavoie, P Adusumilli, AV Carr, JSJ Sweet, AS Ozcan, E Levrau, N Breil, ...
ECS Transactions 77 (5), 59, 2017
442017
Dual Silicide Process Compatible with Replacement-Metal-Gate
E Alptekin, SO Koswatta, C Lavoie, AS Ozcan, KT Schonenberg, ...
US Patent App. 14/010,891, 2014
362014
Material removal process for self-aligned contacts
SK Kanakasabapathy, AS Ozcan
US Patent 9,761,455, 2017
35*2017
Texture of tetragonal α− FeSi 2 films on Si (001)
C Detavernier, C Lavoie, J Jordan-Sweet, AS Özcan
Physical Review B 69 (17), 174106, 2004
342004
Exploitation of a self-limiting process for reproducible formation of ultrathin Ni1− xPtx silicide films
Z Zhang, B Yang, Y Zhu, S Gaudet, S Rossnagel, AJ Kellock, A Ozcan, ...
Applied Physics Letters 97 (25), 2010
322010
Interface roughness evolution in sputtered WSi2∕ Si multilayers
YP Wang, H Zhou, L Zhou, RL Headrick, AT Macrander, AS Özcan
Journal of applied physics 101 (2), 2007
322007
Fin field effect transistor with merged metal semiconductor alloy regions
E Alptekin, AM Ozbek, AS Ozcan, Y Wang
US Patent App. 14/482,764, 2015
312015
Ti and NiPt/Ti liner silicide contacts for advanced technologies
P Adusumilli, E Alptekin, M Raymond, N Breil, F Chafik, C Lavoie, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
302016
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