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Tanweer Ahmed
Tanweer Ahmed
CIC nanoGUNE
Bestätigte E-Mail-Adresse bei nanogune.eu
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Zitiert von
Zitiert von
Jahr
A high-performance MoS2 synaptic device with floating gate engineering for neuromorphic computing
T Paul, T Ahmed, KK Tiwari, CS Thakur, A Ghosh
2D Materials 6 (4), 045008, 2019
1022019
Number‐Resolved Single‐Photon Detection with Ultralow Noise van der Waals Hybrid
K Roy, T Ahmed, H Dubey, TP Sai, R Kashid, S Maliakal, K Hsieh, ...
Advanced Materials 30 (2), 1704412, 2018
412018
Interplay of charge transfer and disorder in optoelectronic response in Graphene/hBN/MoS2 van der Waals heterostructures
T Ahmed, K Roy, S Kakkar, A Pradhan, A Ghosh
2D Materials 7 (2), 025043, 2020
402020
Graphene- van der Waals Hybrid Heterostructure for Photodetector and Memory Device Applications
S Mitra, S Kakkar, T Ahmed, A Ghosh
Physical Review Applied 14 (6), 064029, 2020
152020
Interlayer charge transfer and photodetection efficiency of graphene–transition-metal-dichalcogenide heterostructures
A Parappurath, S Mitra, G Singh, NK Gill, T Ahmed, TP Sai, K Watanabe, ...
Physical Review Applied 17 (6), 064062, 2022
132022
A generic method to control hysteresis and memory effect in Van der Waals hybrids
T Ahmed, S Islam, T Paul, N Hariharan, S Elizabeth, A Ghosh
Materials Research Express 7 (1), 014004, 2020
132020
High-Efficiency Infrared Sensing with Optically Excited Graphene-Transition Metal Dichalcogenide Heterostructures
S Kakkar, A Majumdar, T Ahmed, A Parappurath, NK Gill, K Watanabe, ...
Small (Weinheim an der Bergstrasse, Germany), e2202626, 2022
122022
Observation of inter-layer charge transmission resonance at optically excited graphene–TMDC interfaces
R Kashid, JK Mishra, A Pradhan, T Ahmed, S Kakkar, P Mundada, ...
APL Maretials 8, 091114, 2020
122020
Thermal History-Dependent Current Relaxation in hBN/MoS2 van der Waals Dimers
T Ahmed, P Bellare, R Debnath, A Roy, N Ravishankar, A Ghosh
ACS nano 14 (5), 5909-5916, 2020
112020
Atomically-smooth single-crystalline VO2 (101) thin films with sharp metal-insulator transition
D Mondal, SR Mahapatra, T Ahmed, SK Podapangi, A Ghosh, ...
Journal of Applied Physics 126 (21), 2019
112019
Fermi level pinning induced by doping in air stable n-type organic semiconductor
S Sharma, S Ghosh, T Ahmed, S Ray, S Islam, U Salzner, A Ghosh, ...
ACS Applied Electronic Materials 2 (1), 66-73, 2020
102020
Thermodynamically stable octahedral MoS2 in van der Waals hetero-bilayers
T Ahmed, MH Naik, S Kumari, SP Suman, R Debnath, S Dutta, ...
2D Materials 6 (4), 041002, 2019
92019
Optimising graphene visibility in van der Waals heterostructures
TS Menon, S Mishra, VC Antony, K Dixit, S Kakkar, T Ahmed, S Islam, ...
Nanotechnology 30 (39), 395704, 2019
92019
2D van der Waals Hybrid: Structures, Properties and Devices
MA Aamir, T Ahmed, K Hsieh, S Islam, P Karnatak, R Kashid, ...
2D Inorganic Materials Beyond Graphene, 169-238, 2017
32017
Unveiling Intrinsic Bulk Photovoltaic Effect in Atomically Thin ReS2
M Ramos, T Ahmed, BQ Tu, E Chatzikyriakou, L Olano-Vegas, ...
Nano Letters 24 (46), 14728-14735, 2024
2024
Biocompatibility of Water‐Dispersible Pristine Graphene and Graphene Oxide Using a Close‐to‐Human Animal Model: A Pilot Study on Swine
P Nicolussi, G Pilo, MG Cancedda, G Peng, NDQ Chau, A De la Cadena, ...
Advanced healthcare materials, 2401783, 2024
2024
Impact of van der Waals epitaxy on structural and optoelectronic properties of layered solids
T Ahmed
2021
Atomically-Smooth Single-Crystalline VO thin films with Bulk-like Metal-Insulator Transitions
D Mondal, SR Mahapatra, T Ahmed, SK Podapangi, A Ghosh, ...
arXiv preprint arXiv:1908.02937, 2019
2019
Van der Waals proximity induced structural polymorphism in atomically thin MoS2.
T Ahmed, M H Naik, S Kumari, UV Waghmare, M Jain, A Ghosh
APS March Meeting Abstracts 2018, T60. 217, 2018
2018
Van der Waals epitaxy induced thermodynamically stable octahedral (1T’) phase in single layer MoS2
T Ahmed
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