Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures O Ambacher, J Smart, JR Shealy, NG Weimann, K Chu, M Murphy, ...
Journal of applied physics 85 (6), 3222-3233, 1999
3807 1999 Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures O Ambacher, B Foutz, J Smart, JR Shealy, NG Weimann, K Chu, ...
Journal of applied physics 87 (1), 334-344, 2000
2173 2000 Optical constants of epitaxial AlGaN films and their temperature dependence D Brunner, H Angerer, E Bustarret, F Freudenberg, R Höpler, R Dimitrov, ...
Journal of applied physics 82 (10), 5090-5096, 1997
812 1997 Undoped AlGaN/GaN HEMTs for microwave power amplification LF Eastman, V Tilak, J Smart, BM Green, EM Chumbes, R Dimitrov, H Kim, ...
IEEE Transactions on Electron Devices 48 (3), 479-485, 2001
470 2001 Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition O Ambacher, MS Brandt, R Dimitrov, T Metzger, M Stutzmann, RA Fischer, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996
389 1996 Optical process for liftoff of group III-nitride films MK Kelly, O Ambacher, R Dimitrov, R Handschuh, M Stutzmann
Physica Status Solidi A (Applied Research) 159, 1997
302 1997 Playing with polarity M Stutzmann, O Ambacher, M Eickhoff, U Karrer, A Lima Pimenta, ...
physica status solidi (b) 228 (2), 505-512, 2001
294 2001 Influence of substrate‐induced biaxial compressive stress on the optical properties of thin GaN films W Rieger, T Metzger, H Angerer, R Dimitrov, O Ambacher, M Stutzmann
Applied physics letters 68 (7), 970-972, 1996
288 1996 Optical patterning of GaN films MK Kelly, O Ambacher, B Dahlheimer, G Groos, R Dimitrov, H Angerer, ...
Applied physics letters 69 (12), 1749-1751, 1996
271 1996 Method of separating two layers of material from one another and electronic components produced using this process M Kelly, O Ambacher, M Stutzmann, M Brandt, R Dimitrov, R Handschuh
US Patent 6,559,075, 2003
255 2003 Electron affinity of SP Grabowski, M Schneider, H Nienhaus, W Mönch, R Dimitrov, ...
Applied Physics Letters 78 (17), 2503-2505, 2001
253 2001 Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on … R Dimitrov, M Murphy, J Smart, W Schaff, JR Shealy, LF Eastman, ...
Journal of Applied Physics 87 (7), 3375-3380, 2000
247 2000 Role of spontaneous and piezoelectric polarization induced effects in Group‐III nitride based heterostructures and devices O Ambacher, R Dimitrov, M Stutzmann, BE Foutz, MJ Murphy, JA Smart, ...
physica status solidi (b) 216 (1), 381-389, 1999
210 1999 R Zeisel, MW Bayerl, STB Goennenwein, R Dimitrov, O Ambacher, ...
Physical review B 61 (24), R16283, 2000
174 2000 Defect-related optical transitions in GaN W Rieger, R Dimitrov, D Brunner, E Rohrer, O Ambacher, M Stutzmann
Physical Review B 54 (24), 17596, 1996
118 1996 Method of separating two layers of material from one another M Kelly, O Ambacher, M Stutzmann, M Brandt, R Dimitrov, R Handschuh
US Patent 6,740,604, 2004
111 2004 Negative electron affinity of cesiated M Eyckeler, W Mönch, TU Kampen, R Dimitrov, O Ambacher, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998
93 1998 Spatially resolved photoluminescence of inversion domain boundaries in GaN-based lateral polarity heterostructures PJ Schuck, MD Mason, RD Grober, O Ambacher, AP Lima, C Miskys, ...
Applied Physics Letters 79 (7), 952-954, 2001
86 2001 Structural properties of AlGaN/GaN heterostructures on Si (111) substrates suitable for high-electron mobility transistors S Kaiser, M Jakob, J Zweck, W Gebhardt, O Ambacher, R Dimitrov, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000
79 2000 Properties and applications of MBE grown AlGaN M Stutzmann, O Ambacher, A Cros, MS Brandt, H Angerer, R Dimitrov, ...
Materials Science and Engineering: B 50 (1-3), 212-218, 1997
75 1997 