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Silvia H. Chan
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Ultrafast carrier dynamics and terahertz emission in optically pumped graphene at room temperature
S Boubanga-Tombet, S Chan, T Watanabe, A Satou, V Ryzhii, T Otsuji
Graphene-Based Terahertz Electronics and Plasmonics, 539-554, 2020
2342020
In-situ Oxide, GaN interlayer based vertical trench MOSFET (OG-FET) on bulk GaN substrates
C Gupta, C Lund, SH Chan, A Agarwal, J Liu, Y Enatsu, S Keller, ...
IEEE Electron Device Letters 38 (3), 353-355, 2017
1782017
OG-FET: An In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET
C Gupta, SH Chan, Y Enatsu, A Agarwal, S Keller, UK Mishra
IEEE Electron Device Letters 37 (12), 1601-1604, 2016
852016
Demonstrating >1.4 kV OG-FET performance with a novel double field-plated geometry and the successful scaling of large-area devices
D Ji, C Gupta, SH Chan, A Agarwal, W Li, S Keller, UK Mishra, ...
Electron Device Meeting (IEDM), 2017 IEEE International, 2018
742018
Large Area In-Situ Oxide, GaN Interlayer Based Vertical Trench MOSFET (OG-FET)
D Ji, C Gupta, A Agarwal, SH Chan, C Lund, W Li, S Keller, UK Mishra, ...
IEEE Electron Device Letters 39 (5), 711 - 714, 2018
702018
Comparing electrical performance of GaN trench-gate MOSFETs with a-plane and m-plane sidewall channels
C Gupta, S Chan, C Lund, A Agarwal, O Koksaldi, J Liu, Y Enatsu, ...
Appl. Phys. Express 9 (12), 121001, 2016
582016
On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors
D Bisi, SH Chan, X Liu, R Yeluri, S Keller, M Meneghini, E Zanoni, ...
Applied Physics Letters 108 (11), 112104, 2016
582016
Solution-based stoichiometric control over charge transport in nanocrystalline CdSe devices
DK Kim, AT Fafarman, BT Diroll, SH Chan, TR Gordon, CB Murray, ...
ACS nano 7 (10), 8760-8770, 2013
532013
First demonstration of AlSiO as gate dielectric in GaN FETs; applied to a high performance OG-FET
C Gupta, SH Chan, A Agarwal, N Hatui, S Keller, UK Mishra
IEEE Electron Device Letters 38 (11), 1575-1578, 2017
512017
Improved Dynamic Ron of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch
D Ji, W Li, A Agarwal, SH Chan, J Haller, D Bisi, M Labrecque, C Gupta, ...
IEEE Electron Device Letters 39 (7), 1030 - 1033, 2018
382018
Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltage
S Chowdhury, J Kim, C Gupta, S Keller, SH Chan, UK Mishra
US Patent 10,312,361, 2019
352019
Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN-based devices
SH Chan, M Tahhan, X Liu, D Bisi, C Gupta, O Koksaldi, H Li, T Mates, ...
Japanese Journal of Applied Physics 55, 021501, 2016
322016
Metalorganic chemical vapor deposition of Al2O3 using trimethylaluminum and O2 precursors: Growth mechanism and crystallinity
X Liu, SH Chan, F Wu, Y Li, S Keller, JS Speck, UK Mishra
Journal of Crystal Growth 408, 78-84, 2014
302014
Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness
M Tahhan, J Nedy, SH Chan, C Lund, H Li, G Gupta, S Keller, U Mishra
Journal of Vacuum Science & Technology A 34 (3), 031303, 2016
292016
High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces
SH Chan, S Keller, M Tahhan, H Li, B Romanczyk, SP DenBaars, ...
Semiconductor Science and Technology 31 (6), 065008, 2016
252016
Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN
I Sayed, W Liu, S Chan, C Gupta, M Guidry, H Li, S Keller, U Mishra
Applied Physics Letters 115 (3), 2019
202019
Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures
H Li, S Keller, SH Chan, J Lu, SP Denbaars, UK Mishra
Semiconductor Science and Technology 30 (5), 055015, 2015
202015
Electro-thermal investigation of GaN vertical trench MOSFETs
B Chatterjee, D Ji, A Agarwal, SH Chan, S Chowdhury, S Choi
IEEE Electron Device Letters 42 (5), 723-726, 2021
182021
In situ metalorganic chemical vapor deposition of Al2O3 on N-face GaN and evidence of polarity induced fixed charge
X Liu, J Kim, DJ Suntrup, S Wienecke, M Tahhan, R Yeluri, SH Chan, J Lu, ...
Applied Physics Letters 104 (26), 2014
182014
InGaN lattice constant engineering via growth on (In, Ga) N/GaN nanostripe arrays
S Keller, C Lund, T Whyland, Y Hu, C Neufeld, S Chan, S Wienecke, F Wu, ...
Semiconductor Science and Technology 30 (10), 105020, 2015
172015
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