Change of InAs/GaAs quantum dot shape and composition during capping H Eisele, A Lenz, R Heitz, R Timm, M Dähne, Y Temko, T Suzuki, K Jacobi
Journal of Applied Physics 104 (12), 2008
137 2008 Reversed truncated cone composition distribution of A Lenz, R Timm, H Eisele, C Hennig, SK Becker, RL Sellin, UW Pohl, ...
Applied Physics Letters 81 (27), 5150-5152, 2002
111 2002 Self-Organized Formation of R Timm, H Eisele, A Lenz, L Ivanova, G Balakrishnan, DL Huffaker, ...
Physical review letters 101 (25), 256101, 2008
81 2008 Structure and intermixing of GaSb∕ GaAs quantum dots R Timm, H Eisele, A Lenz, SK Becker, J Grabowski, TY Kim, ...
Applied physics letters 85 (24), 5890-5892, 2004
70 2004 20 Gb/s 85 F Hopfer, A Mutig, G Fiol, M Kuntz, VA Shchukin, VA Haisler, T Warming, ...
IEEE Journal of Selected Topics in Quantum Electronics 13 (5), 1302-1308, 2007
68 2007 Quantum ring formation and antimony segregation in GaSb∕ GaAs nanostructures R Timm, A Lenz, H Eisele, L Ivanova, M Dähne, G Balakrishnan, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
56 2008 Nanovoids in InGaAs/GaAs quantum dots observed by cross-sectional scanning tunneling microscopy A Lenz, H Eisele, R Timm, SK Becker, RL Sellin, UW Pohl, D Bimberg, ...
Applied physics letters 85, 3848, 2004
56 2004 Atomic structure and optical properties of InAs submonolayer depositions in GaAs A Lenz, H Eisele, J Becker, JH Schulze, TD Germann, F Luckert, ...
Journal of Vacuum Science & Technology B 29 (4), 2011
55 2011 Direct measurement of the band gap and Fermi level position at InN (112¯) P Ebert, S Schaafhausen, A Lenz, A Sabitova, L Ivanova, M Daehne, ...
Applied physics letters 98 (6), 2011
51 2011 Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs S Harrison, MP Young, PD Hodgson, RJ Young, M Hayne, L Danos, ...
Physical Review B 93 (8), 085302, 2016
50 2016 Direct measurement and analysis of the conduction band density of states in diluted L Ivanova, H Eisele, MP Vaughan, P Ebert, A Lenz, R Timm, O Schumann, ...
Physical Review B—Condensed Matter and Materials Physics 82 (16), 161201, 2010
47 2010 Effects of strain and confinement on the emission wavelength of InAs quantum dots due to a O Schumann, S Birner, M Baudach, L Geelhaar, H Eisele, L Ivanova, ...
Physical Review B—Condensed Matter and Materials Physics 71 (24), 245316, 2005
44 2005 Structure of InAs/GaAs quantum dots grown with Sb surfactant R Timm, H Eisele, A Lenz, TY Kim, F Streicher, K Pötschke, UW Pohl, ...
Physica E: Low-Dimensional Systems and Nanostructures 32 (1-2), 25-28, 2006
43 2006 Atomic structure of buried InAs sub-monolayer depositions in GaAs A Lenz, H Eisele, J Becker, L Ivanova, E Lenz, F Luckert, K Pötschke, ...
Applied Physics Express 3 (10), 105602, 2010
38 2010 Atomic structure of InAs and InGaAs quantum dots determined by cross-sectional scanning tunneling microscopy H Eisele, A Lenz, C Hennig, R Timm, M Ternes, M Dähne
Journal of crystal growth 248, 322-327, 2003
36 2003 Confined states of individual type-II GaSb/GaAs quantum rings studied by cross-sectional scanning tunneling spectroscopy R Timm, H Eisele, A Lenz, L Ivanova, V Vosseburger, T Warming, ...
Nano letters 10 (10), 3972-3977, 2010
34 2010 Novel concepts for ultrahigh-speed quantum-dot VCSELs and edge-emitters NN Ledentsov, F Hopfer, A Mutig, VA Shchukin, AV Savel'ev, G Fiol, ...
Physics and Simulation of Optoelectronic Devices XV 6468, 461-475, 2007
32 2007 Growth of In0. 25Ga0. 75As quantum dots on GaP utilizing a GaAs interlayer G Stracke, A Glacki, T Nowozin, L Bonato, S Rodt, C Prohl, A Lenz, ...
Applied Physics Letters 101 (22), 2012
28 2012 Spatial structure of In0. 25Ga0. 75As/GaAs/GaP quantum dots on the atomic scale C Prohl, A Lenz, D Roy, J Schuppang, G Stracke, A Strittmatter, UW Pohl, ...
Applied Physics Letters 102 (12), 2013
21 2013 Formation of InAs/InGaAsP quantum-dashes on InP (001) A Lenz, F Genz, H Eisele, L Ivanova, R Timm, D Franke, H Künzel, ...
Applied Physics Letters 95, 203105, 2009
21 2009 