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Jörg Schulze
Jörg Schulze
Professor für Elektronische Bauelemente (LEB), FAU Erlangen-Nürnberg & Fraunhofer IISB Erlangen
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Titel
Zitiert von
Zitiert von
Jahr
Scaling the vertical tunnel FET with tunnel bandgap modulation and gate workfunction engineering
KK Bhuwalka, J Schulze, I Eisele
IEEE transactions on electron devices 52 (5), 909-917, 2005
4082005
Vertical tunnel field-effect transistor
KK Bhuwalka, S Sedlmaier, AK Ludsteck, C Tolksdorf, J Schulze, I Eisele
IEEE Transactions on Electron Devices 51 (2), 279-282, 2004
3392004
Performance enhancement of vertical tunnel field-effect transistor with SiGe in the δp+ layer
KK Bhuwalka, J Schulze, I Eisele
Japanese Journal of Applied Physics 43 (7R), 4073, 2004
2882004
Germanium-tin pin photodetectors integrated on silicon grown by molecular beam epitaxy
J Werner, M Oehme, M Schmid, M Kaschel, A Schirmer, E Kasper, ...
Applied physics letters 98 (6), 2011
2372011
Electrical spin injection and transport in germanium
Y Zhou, W Han, LT Chang, F Xiu, M Wang, M Oehme, IA Fischer, ...
Physical Review B—Condensed Matter and Materials Physics 84 (12), 125323, 2011
2352011
Grazing incidence small angle x-ray scattering from free-standing nanostructures
M Rauscher, R Paniago, H Metzger, Z Kovats, J Domke, J Peisl, ...
Journal of Applied Physics 86 (12), 6763-6769, 1999
2331999
GeSn pin detectors integrated on Si with up to 4% Sn
M Oehme, M Schmid, M Kaschel, M Gollhofer, D Widmann, E Kasper, ...
Applied Physics Letters 101 (14), 2012
2152012
Electrically pumped lasing from Ge Fabry-Perot resonators on Si
R Koerner, M Oehme, M Gollhofer, M Schmid, K Kostecki, S Bechler, ...
Optics express 23 (11), 14815-14822, 2015
1872015
A simulation approach to optimize the electrical parameters of a vertical tunnel FET
KK Bhuwalka, J Schulze, I Eisele
IEEE transactions on electron devices 52 (7), 1541-1547, 2005
1782005
A vertical MOS-gated Esaki tunneling transistor in silicon
W Hansch, C Fink, J Schulze, I Eisele
Thin Solid Films 369 (1-2), 387-389, 2000
1592000
Growth of silicon based germanium tin alloys
E Kasper, J Werner, M Oehme, S Escoubas, N Burle, J Schulze
Thin Solid Films 520 (8), 3195-3200, 2012
1412012
Epitaxial growth of strained and unstrained GeSn alloys up to 25% Sn
M Oehme, K Kostecki, M Schmid, F Oliveira, E Kasper, J Schulze
Thin Solid Films 557, 169-172, 2014
1342014
Room-temperature electroluminescence from GeSn light-emitting pin diodes on Si
M Oehme, J Werner, M Gollhofer, M Schmid, M Kaschel, E Kasper, ...
IEEE Photonics Technology Letters 23 (23), 1751-1753, 2011
1252011
GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz
M Oehme, K Kostecki, K Ye, S Bechler, K Ulbricht, M Schmid, M Kaschel, ...
Optics express 22 (1), 839-846, 2014
1152014
GeSn heterojunction LEDs on Si substrates
M Oehme, K Kostecki, T Arguirov, G Mussler, K Ye, M Gollhofer, M Schmid, ...
IEEE photonics technology letters 26 (2), 187-189, 2013
1082013
GeSn/Ge multiquantum well photodetectors on Si substrates
M Oehme, D Widmann, K Kostecki, P Zaumseil, B Schwartz, M Gollhofer, ...
Optics letters 39 (16), 4711-4714, 2014
962014
Direct bandgap narrowing in Ge LED’s on Si substrates
M Oehme, M Gollhofer, D Widmann, M Schmid, M Kaschel, E Kasper, ...
Optics express 21 (2), 2206-2211, 2013
942013
Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn
M Oehme, D Buca, K Kostecki, S Wirths, B Holländer, E Kasper, J Schulze
Journal of crystal growth 384, 71-76, 2013
872013
A model for multistep trap-assisted tunneling in thin high-k dielectrics
O Blank, H Reisinger, R Stengl, M Gutsche, F Wiest, V Capodieci, ...
Journal of applied physics 97 (4), 2005
772005
Electroluminescence of GeSn/Ge MQW LEDs on Si substrate
B Schwartz, M Oehme, K Kostecki, D Widmann, M Gollhofer, R Koerner, ...
Optics letters 40 (13), 3209-3212, 2015
632015
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