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Qimin Yan
Qimin Yan
Associate Professor, Department of Physics, Northeastern University
Bestätigte E-Mail-Adresse bei northeastern.edu - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Intrinsic current− voltage characteristics of graphene nanoribbon transistors and effect of edge doping
Q Yan, B Huang, J Yu, F Zheng, J Zang, J Wu, BL Gu, F Liu, W Duan
Nano letters 7 (6), 1469-1473, 2007
7052007
Elastic Properties of Chemical-Vapor-Deposited Monolayer MoS2, WS2, and Their Bilayer Heterostructures
K Liu, Q Yan, M Chen, W Fan, Y Sun, J Suh, D Fu, S Lee, J Zhou, ...
Nano letters 14 (9), 5097, 2014
6962014
First-principles theory of nonradiative carrier capture via multiphonon emission
A Alkauskas, Q Yan, CG Van de Walle
Physical Review B 90 (7), 075202, 2014
3862014
Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN
PG Moses, M Miao, Q Yan, CG Van de Walle
The Journal of chemical physics 134 (8), 2011
3632011
Learning atoms for materials discovery
Q Zhou, P Tang, S Liu, J Pan, Q Yan, SC Zhang
Proceedings of the National Academy of Sciences 115 (28), E6411-E6417, 2018
2312018
Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
Y Zhao, Q Yan, CY Huang, SC Huang, P Shan Hsu, S Tanaka, CC Pan, ...
Applied Physics Letters 100 (20), 2012
2212012
Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes
E Kioupakis, Q Yan, CG Van de Walle
Applied Physics Letters 101 (23), 2012
2162012
Solar fuels photoanode materials discovery by integrating high-throughput theory and experiment
Q Yan, J Yu, SK Suram, L Zhou, A Shinde, PF Newhouse, W Chen, G Li, ...
Proceedings of the National Academy of Sciences 114 (12), 3040-3043, 2017
2142017
Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN
Q Yan, P Rinke, M Scheffler, CG Van de Walle
Applied Physics Letters 95 (12), 2009
2052009
Making a field effect transistor on a single graphene nanoribbon by selective doping
B Huang, Q Yan, G Zhou, J Wu, BL Gu, W Duan, F Liu
Applied Physics Letters 91 (25), 2007
1962007
Origins of optical absorption and emission lines in AlN
Q Yan, A Janotti, M Scheffler, CG Van de Walle
Applied Physics Letters 105 (11), 2014
1952014
Polarization-Driven Topological Insulator Transition in a Quantum Well
MS Miao, Q Yan, CG Van de Walle, WK Lou, LL Li, K Chang
Physical review letters 109 (18), 186803, 2012
1852012
Negative Poisson’s ratio in 1T-type crystalline two-dimensional transition metal dichalcogenides
L Yu, Q Yan, A Ruzsinszky
Nature Communications 8, 15224, 2017
1742017
Role of nitrogen vacancies in the luminescence of Mg-doped GaN
Q Yan, A Janotti, M Scheffler, CG Van de Walle
Applied Physics Letters 100 (14), 2012
1702012
Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices
E Kioupakis, Q Yan, D Steiauf, CG Van de Walle
New Journal of Physics 15 (12), 125006, 2013
1612013
Effects of strain on the band structure of group-III nitrides
Q Yan, P Rinke, A Janotti, M Scheffler, CG Van de Walle
Physical Review B 90 (12), 125118, 2014
1602014
Microscopic origin of the -type conductivity of the topological crystalline insulator SnTe and the effect of Pb alloying
N Wang, D West, J Liu, J Li, Q Yan, BL Gu, SB Zhang, W Duan
Physical review B 89 (4), 045142, 2014
1262014
High optical polarization ratio from semipolar (202 1) blue-green InGaN/GaN light-emitting diodes
Y Zhao, S Tanaka, Q Yan, CY Huang, RB Chung, CC Pan, K Fujito, ...
Applied physics letters 99 (5), 2011
1082011
High Throughput Discovery of Solar Fuels Photoanodes in the CuO–V2O5 System
L Zhou, Q Yan, A Shinde, D Guevarra, PF Newhouse, ...
Advanced Energy Materials 5 (22), 1500968, 2015
1062015
Band parameters and strain effects in ZnO and group-III nitrides
Q Yan, P Rinke, M Winkelnkemper, A Qteish, D Bimberg, M Scheffler, ...
Semiconductor science and technology 26 (1), 014037, 2010
1052010
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