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Robert M. Wallace
Robert M. Wallace
University of Texas at Dallas
Bestätigte E-Mail-Adresse bei utdallas.edu - Startseite
Titel
Zitiert von
Zitiert von
Jahr
High-κ gate dielectrics: Current status and materials properties considerations
GD Wilk, RM Wallace, JM Anthony
Journal of applied physics 89 (10), 5243-5275, 2001
78242001
Carbon-based supercapacitors produced by activation of graphene
Y Zhu, S Murali, MD Stoller, KJ Ganesh, W Cai, PJ Ferreira, A Pirkle, ...
science 332 (6037), 1537-1541, 2011
67282011
Hafnium and zirconium silicates for advanced gate dielectrics
GD Wilk, RM Wallace, JM Anthony
Journal of Applied Physics 87 (1), 484-492, 2000
13692000
The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2
A Pirkle, J Chan, A Venugopal, D Hinojos, CW Magnuson, S McDonnell, ...
Applied Physics Letters 99 (12), 2011
11652011
The role of oxygen during thermal reduction of graphene oxide studied by infrared absorption spectroscopy
M Acik, G Lee, C Mattevi, A Pirkle, RM Wallace, M Chhowalla, K Cho, ...
The Journal of Physical Chemistry C 115 (40), 19761-19781, 2011
10302011
Near-unity photoluminescence quantum yield in MoS2
M Amani, DH Lien, D Kiriya, J Xiao, A Azcatl, J Noh, SR Madhvapathy, ...
Science 350 (6264), 1065-1068, 2015
9392015
Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors
C Gong, H Zhang, W Wang, L Colombo, RM Wallace, K Cho
Applied Physics Letters 103 (5), 2013
9342013
Defect-Dominated Doping and Contact Resistance in MoS2
S McDonnell, R Addou, C Buie, RM Wallace, CL Hinkle
ACS nano 8 (3), 2880-2888, 2014
9122014
Zirconium and/or hafnium oxynitride gate dielectric
RM Wallace, RA Stoltz, GD Wilk
US Patent 6,013,553, 2000
8402000
The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces
C Gong, L Colombo, RM Wallace, K Cho
Nano letters 14 (4), 1714-1720, 2014
8212014
High-K materials and metal gates for CMOS applications
J Robertson, RM Wallace
Materials Science and Engineering: R: Reports 88, 1-41, 2015
8102015
Two-dimensional gallium nitride realized via graphene encapsulation
ZY Al Balushi, K Wang, RK Ghosh, RA Vilá, SM Eichfeld, JD Caldwell, ...
Nature materials 15 (11), 1166-1171, 2016
7662016
Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon
GD Wilk, RM Wallace
Applied Physics Letters 74 (19), 2854-2856, 1999
6761999
MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts
S Chuang, C Battaglia, A Azcatl, S McDonnell, JS Kang, X Yin, M Tosun, ...
Nano letters 14 (3), 1337-1342, 2014
6532014
Hole Selective MoOx Contact for Silicon Solar Cells
C Battaglia, X Yin, M Zheng, ID Sharp, T Chen, S McDonnell, A Azcatl, ...
Nano letters 14 (2), 967-971, 2014
6362014
GaAs interfacial self-cleaning by atomic layer deposition
CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ...
Applied Physics Letters 92 (7), 2008
4942008
Manganese Doping of Monolayer MoS2: The Substrate Is Critical
K Zhang, S Feng, J Wang, A Azcatl, N Lu, R Addou, N Wang, C Zhou, ...
Nano letters 15 (10), 6586-6591, 2015
4672015
Highly Scalable, Atomically Thin WSe2 Grown via Metal–Organic Chemical Vapor Deposition
SM Eichfeld, L Hossain, YC Lin, AF Piasecki, B Kupp, AG Birdwell, ...
ACS nano 9 (2), 2080-2087, 2015
4652015
First-principles study of metal–graphene interfaces
C Gong, G Lee, B Shan, EM Vogel, RM Wallace, K Cho
Journal of Applied Physics 108 (12), 2010
4602010
Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures
YC Lin, RK Ghosh, R Addou, N Lu, SM Eichfeld, H Zhu, MY Li, X Peng, ...
Nature Communications 6, 7311, 2015
4592015
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