| Tuning the Dzyaloshinskii–Moriya interaction in Pt/Co/MgO heterostructures through the MgO thickness A Cao, X Zhang, B Koopmans, S Peng, Y Zhang, Z Wang, S Yan, H Yang, ... Nanoscale 10 (25), 12062-12067, 2018 | 96 | 2018 |
| Developments and applications of tunneling magnetoresistance sensors S Yan, Z Zhou, Y Yang, Q Leng, W Zhao Tsinghua Science and Technology 27 (3), 443-454, 2021 | 46 | 2021 |
| Design and fabrication of full wheatstone-bridge-based angular GMR sensors S Yan, Z Cao, Z Guo, Z Zheng, A Cao, Y Qi, Q Leng, W Zhao Sensors 18 (6), 1832, 2018 | 36 | 2018 |
| High TMR for both in-plane and perpendicular magnetic field justified by CoFeB free layer thickness for 3-D MTJ sensors Z Lei, S Yan, Z Cao, Z Guo, P Song, Y Qiang, J Wang, W Zhao, Q Leng AIP Advances 9 (8), 2019 | 14 | 2019 |
| Radiation impact of swift heavy ion beams on double-interface CoFeB/MgO magnetic tunnel junctions B Wang, Z Wang, A Du, Y Qiang, K Cao, Y Zhao, H Zheng, S Yan, P Zhai, ... Applied Physics Letters 116 (17), 2020 | 13 | 2020 |
| Low spin polarization in heavy-metal–ferromagnet structures detected through domain-wall motion by synchronized magnetic field and current X Zhang, N Vernier, L Vila, S Yan, Z Cao, A Cao, Z Wang, W Cai, Y Liu, ... Physical Review Applied 11 (5), 054041, 2019 | 12 | 2019 |
| Tuning the pinning direction of giant magnetoresistive sensor by post annealing process Z Cao, Y Wei, W Chen, S Yan, L Lin, Z Li, L Wang, H Yang, Q Leng, ... Science China Information Sciences 64, 1-7, 2021 | 10 | 2021 |
| Tuning the linear field range of tunnel magnetoresistive sensor with MgO capping in perpendicular pinned double-interface CoFeB/MgO structure Z Cao, W Chen, S Lu, S Yan, Y Zhang, Z Zhou, Y Yang, Z Li, W Zhao, ... Applied Physics Letters 118 (12), 2021 | 8 | 2021 |
| Influence of seed layer on the magnetoresistance properties in IrMn-based magnetic tunnel junctions W Chen, R Hao, S Lu, Z Cao, S Yan, S Yan, D Zhu, Q Leng Journal of Magnetism and Magnetic Materials 546, 168674, 2022 | 6 | 2022 |
| Highly reliable STT-MRAM structure and implementation method thereof W Zhao, K Cao, E Deng, W Cai, S Yan US Patent 11,170,833, 2021 | 3 | 2021 |
| A diode-enhanced scheme for giant magnetoresistance amplification and reconfigurable logic J Nan, K Zhang, Y Zhang, S Yan, Z Zhang, Z Zheng, G Wang, Q Leng, ... IEEE Access 8, 87584-87591, 2020 | 3 | 2020 |
| Tunable Sensing Performance of Linear Perpendicular TMR Sensor S Yan, Z Zhou, Z Cao, Y Yang, Z Li, W Chen, Q Leng, W Zhao 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2021 | 2 | 2021 |
| A high precision two-axis GMR angular sensor manufactured by post-annealing Z Zhou, Z Cao, S Yan, X Wang, L Xie, S Lu, D Zhu, Q Leng, W Zhao Science China Information Sciences 67 (6), 1-2, 2024 | | 2024 |
| Magnetic coupling governed pinning directions in magnetic tunnel junctions under magnetic field annealing with zero magnetic field cooling W Chen, S Yan, Z Cao, S Lu, X Zhao, R Hao, Z Zhou, Z Li, K Zhang, S Yan, ... Science China Information Sciences 66 (4), 149402, 2023 | | 2023 |
| Reversal of the Pinning Direction in the Synthetic Spin Valve with a NiFeCr Seed Layer S Yan, W Chen, Z Zhou, Z Li, Z Cao, S Lu, D Zhu, W Zhao, Q Leng Nanomaterials 12 (12), 2077, 2022 | | 2022 |
| Seed layer dependent bottom pinned magnetic tunnel junctions W Chen, S Yan, Y Yang, Z Cao, Y Lin, Z Zhou, S Yan, Q Leng 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2021 | | 2021 |
| Uniform CoPt permanent magnetic film with high in-plane coercivity Z Li, K Zhang, W Chen, Z Zhou, Z Cao, S Yan, W Zhao, Q Leng 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2021 | | 2021 |
