| Structural destabilization induced by lithium intercalation in MoS2 and related compounds MA Py, RR Haering Canadian Journal of Physics 61 (1), 76-84, 1983 | 796 | 1983 |
| Current status of AlInN layers lattice-matched to GaN for photonics and electronics R Butté, JF Carlin, E Feltin, M Gonschorek, S Nicolay, G Christmann, ... Journal of Physics D: Applied Physics 40 (20), 6328, 2007 | 416 | 2007 |
| High electron mobility lattice-matched AlInN∕ GaN field-effect transistor heterostructures M Gonschorek, JF Carlin, E Feltin, MA Py, N Grandjean Applied physics letters 89 (6), 2006 | 394 | 2006 |
| Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices? F Medjdoub, JF Carlin, M Gonschorek, E Feltin, MA Py, D Ducatteau, ... 2006 International Electron Devices Meeting, 1-4, 2006 | 263 | 2006 |
| Two-dimensional electron gas density in Al1− xInxN/AlN/GaN heterostructures (0.03≤ x≤ 0.23) M Gonschorek, JF Carlin, E Feltin, MA Py, N Grandjean, V Darakchieva, ... Journal of Applied Physics 103 (9), 2008 | 218 | 2008 |
| Intra-and interlayer contributions to the lattice vibrations in MoO3 MA Py, K Maschke Physica B+ C 105 (1-3), 370-374, 1981 | 173 | 1981 |
| Barrier-layer scaling of InAlN/GaN HEMTs F Medjdoub, M Alomari, JF Carlin, M Gonschorek, E Feltin, MA Py, ... IEEE Electron device letters 29 (5), 422-425, 2008 | 160 | 2008 |
| In situ X-ray diffraction experiments on lithium intercalation compounds JR Dahn, MA Py, RR Haering Canadian Journal of Physics 60 (3), 307-313, 1982 | 153 | 1982 |
| Raman scattering and structural properties of MoO3 MA Py, PE Schmid, JT Vallin Il Nuovo Cimento B Series 11 38 (2), 271-279, 1977 | 135 | 1977 |
| Small-signal characteristics of AlInN/GaN HEMTs F Medjdoub, JF Carlin, M Gonschorek, MA Py, N Grandjean, ... Electronics Letters 42 (13), 779-780, 2006 | 62 | 2006 |
| Secondary ion mass spectrometry study of oxygen accumulation at GaAs/AlGaAs interfaces grown by molecular beam epitaxy T Achtnich, G Burri, MA Py, M Ilegems Applied physics letters 50 (24), 1730-1732, 1987 | 61 | 1987 |
| DC and low-frequency noise characteristics of SiGe p-channel FETs designed for 0.13-/spl mu/m technology S Okhonin, MA Py, B Georgescu, H Fischer, L Risch IEEE Transactions on Electron Devices 46 (7), 1514-1517, 1999 | 46 | 1999 |
| International Electron Devices Meeting F Medjdoub, JF Carlin, M Gonschorek, E Feltin, MA Py, D Ducatteau, ... San Francisco, California, USA, 11-13, 2006 | 42 | 2006 |
| Leakage mechanisms in InAlN based heterostructures L Lugani, MA Py, JF Carlin, N Grandjean Journal of Applied Physics 115 (7), 2014 | 41 | 2014 |
| Evaluation of AlInN/GaN HEMTs on sapphire substrate in microwave, time and temperature domains F Medjdoub, D Ducatteau, C Gaquière, JF Carlin, M Gonschorek, E Feltin, ... Electronics Letters 43 (5), 309-311, 2007 | 38 | 2007 |
| Effect of fluoride plasma treatment on InAlN/GaN HEMTs F Medjdoub, M Alomari, JF Carlin, M Gonschorek, E Feltin, MA Py, ... Electronics Letters 44 (11), 696-698, 2008 | 37 | 2008 |
| Self heating in AlInN/AlN/GaN high power devices: Origin and impact on contact breakdown and IV characteristics M Gonschorek, JF Carlin, E Feltin, MA Py, N Grandjean Journal of Applied Physics 109 (6), 2011 | 36 | 2011 |
| Evidence for screening effects on the 1/f current noise in GaAs/AlGaAs modulation doped field effect transistors MA Py, HJ Buehlmann Journal of applied physics 80 (3), 1583-1593, 1996 | 36 | 1996 |
| New aspects and mechanism of kink effect in InAlAs/InGaAs/InP inverted HFETs B Georgescu, MA Py, A Souifi, G Post, G Guillot IEEE Electron Device Letters 19 (5), 154-156, 1998 | 32 | 1998 |
| High-mobility AlGaN/GaN two-dimensional electron gas heterostructure grown on (111) single crystal diamond substrate A Dussaigne, M Gonschorek, M Malinverni, MA Py, D Martin, A Mouti, ... Japanese Journal of Applied Physics 49 (6R), 061001, 2010 | 31 | 2010 |
