| Unambiguously enhanced ultraviolet luminescence of AlGaN wavy quantum well structures grown on large misoriented sapphire substrate H Sun, S Mitra, RC Subedi, Y Zhang, W Guo, J Ye, MK Shakfa, TK Ng, ... Advanced Functional Materials 29 (48), 1905445, 2019 | 173 | 2019 |
| Impact of the surface recombination on InGaN/GaN-based blue micro-light emitting diodes J Kou, CC Shen, H Shao, J Che, X Hou, C Chu, K Tian, Y Zhang, ... Optics express 27 (12), A643-A653, 2019 | 156 | 2019 |
| InGaN/GaN light-emitting diode with a polarization tunnel junction ZH Zhang, S Tiam Tan, Z Kyaw, Y Ji, W Liu, Z Ju, N Hasanov, X Wei Sun, ... Applied Physics Letters 102 (19), 2013 | 132 | 2013 |
| Hole transport manipulation to improve the hole injection for deep ultraviolet light-emitting diodes ZH Zhang, SW Huang Chen, Y Zhang, L Li, SW Wang, K Tian, C Chu, ... Acs Photonics 4 (7), 1846-1850, 2017 | 131 | 2017 |
| Graphene-based transparent conductive electrodes for GaN-based light emitting diodes: Challenges and countermeasures L Wang, W Liu, Y Zhang, ZH Zhang, ST Tan, X Yi, G Wang, X Sun, H Zhu, ... Nano Energy 12, 419-436, 2015 | 107 | 2015 |
| On the origin of enhanced hole injection for AlGaN-based deep ultraviolet light-emitting diodes with AlN insertion layer in p-electron blocking layer C Chu, K Tian, J Che, H Shao, J Kou, Y Zhang, Y Li, M Wang, Y Zhu, ... Optics express 27 (12), A620-A628, 2019 | 98 | 2019 |
| Nearly efficiency-droop-free AlGaN-based ultraviolet light-emitting diodes with a specifically designed superlattice p-type electron blocking layer for high Mg doping efficiency ZH Zhang, SW Huang Chen, C Chu, K Tian, M Fang, Y Zhang, W Bi, ... Nanoscale research letters 13, 1-7, 2018 | 89 | 2018 |
| Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers ZH Zhang, W Liu, Z Ju, S Tiam Tan, Y Ji, Z Kyaw, X Zhang, L Wang, ... Applied Physics Letters 104 (24), 2014 | 89 | 2014 |
| Orange to red, emission-tunable Mn-doped two-dimensional perovskites with high luminescence and stability C Sun, Z Gao, Y Deng, H Liu, L Wang, S Su, P Li, H Li, Z Zhang, W Bi ACS applied materials & interfaces 11 (37), 34109-34116, 2019 | 84 | 2019 |
| One stone, two birds: high-efficiency blue-emitting perovskite nanocrystals for LED and security ink applications C Sun, Z Gao, H Liu, L Wang, Y Deng, P Li, H Li, ZH Zhang, C Fan, W Bi Chemistry of Materials 31 (14), 5116-5123, 2019 | 80 | 2019 |
| Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes ZH Zhang, J Kou, SWH Chen, H Shao, J Che, C Chu, K Tian, Y Zhang, ... Photonics Research 7 (4), B1-B6, 2019 | 76 | 2019 |
| High-efficiency all-inorganic full-colour quantum dot light-emitting diodes X Yang, ZH Zhang, T Ding, N Wang, G Chen, C Dang, HV Demir, XW Sun Nano energy 46, 229-233, 2018 | 65 | 2018 |
| On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes ZH Zhang, ST Tan, Z Ju, W Liu, Y Ji, Z Kyaw, Y Dikme, XW Sun, HV Demir Journal of Display Technology 9 (4), 226-233, 2012 | 65 | 2012 |
| A review on the low external quantum efficiency and the remedies for GaN-based micro-LEDs S Hang, CM Chuang, Y Zhang, C Chu, K Tian, Q Zheng, T Wu, Z Liu, ... Journal of Physics D: Applied Physics 54 (15), 153002, 2021 | 61 | 2021 |
| Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer ZH Zhang, ST Tan, W Liu, Z Ju, K Zheng, Z Kyaw, Y Ji, N Hasanov, ... Optics express 21 (4), 4958-4969, 2013 | 61 | 2013 |
| Identifying the influence of the intrinsic defects in Gd-doped ZnO thin-films TH Flemban, MC Sequeira, Z Zhang, S Venkatesh, E Alves, K Lorenz, ... Journal of Applied Physics 119 (6), 2016 | 57 | 2016 |
| On the electric-field reservoir for III-nitride based deep ultraviolet light-emitting diodes ZH Zhang, L Li, Y Zhang, F Xu, Q Shi, B Shen, W Bi Optics express 25 (14), 16550-16559, 2017 | 54 | 2017 |
| On the hole injection for III-nitride based deep ultraviolet light-emitting diodes L Li, Y Zhang, S Xu, W Bi, ZH Zhang, HC Kuo Materials 10 (10), 1221, 2017 | 53 | 2017 |
| Quasi‐2D growth of aluminum nitride film on graphene for boosting deep ultraviolet light‐emitting diodes H Chang, Z Chen, B Liu, S Yang, D Liang, Z Dou, Y Zhang, J Yan, Z Liu, ... Advanced Science 7 (15), 2001272, 2020 | 51 | 2020 |
| Very high external quantum efficiency and wall-plug efficiency 527 nm InGaN green LEDs by MOCVD PP Li, YB Zhao, HJ Li, JM Che, ZH Zhang, ZC Li, YY Zhang, LC Wang, ... Optics Express 26 (25), 33108-33115, 2018 | 50 | 2018 |
Hilmi Volkan DemirBilkent University UNAM, Turkey, and NTU SingaporeΗ διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα bilkent.edu.tr
