InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, T Fang, ...
IEEE Electron Device Letters 33 (7), 988-990, 2012
440 2012 MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 J Guo, G Li, F Faria, Y Cao, R Wang, J Verma, X Gao, S Guo, E Beam, ...
IEEE Electron device letters 33 (4), 525-527, 2012
189 2012 Gate-recessed enhancement-mode InAlN/AlN/GaN HEMTs with 1.9-A/mm drain current density and 800-mS/mm transconductance R Wang, P Saunier, X Xing, C Lian, X Gao, S Guo, G Snider, P Fay, ...
IEEE electron device letters 31 (12), 1383-1385, 2010
166 2010 Effect of optical phonon scattering on the performance of GaN transistors T Fang, R Wang, H Xing, S Rajan, D Jena
IEEE Electron Device Letters 33 (5), 709-711, 2012
150 2012 210-GHz InAlN/GaN HEMTs with dielectric-free passivation R Wang, G Li, O Laboutin, Y Cao, W Johnson, G Snider, P Fay, D Jena, ...
IEEE electron device letters 32 (7), 892-894, 2011
135 2011 Ultrascaled InAlN/GaN high electron mobility transistors with cutoff frequency of 400 GHz Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, B Song, ...
Japanese Journal of Applied Physics 52 (8S), 08JN14, 2013
131 2013 220-GHz quaternary barrier InAlGaN/AlN/GaN HEMTs R Wang, G Li, J Verma, B Sensale-Rodriguez, T Fang, J Guo, Z Hu, ...
IEEE Electron device letters 32 (9), 1215-1217, 2011
98 2011 Enhancement-Mode InAlN/AlN/GaN HEMTs With R Wang, P Saunier, Y Tang, T Fang, X Gao, S Guo, G Snider, P Fay, ...
IEEE electron device letters 32 (3), 309-311, 2011
90 2011 Polarization-induced GaN-on-insulator E/D mode p-channel heterostructure FETs G Li, R Wang, B Song, J Verma, Y Cao, S Ganguly, A Verma, J Guo, ...
IEEE electron device letters 34 (7), 852-854, 2013
84 2013 Quaternary Barrier InAlGaN HEMTs With R Wang, G Li, G Karbasian, J Guo, B Song, Y Yue, Z Hu, O Laboutin, ...
IEEE electron device letters 34 (3), 378-380, 2013
81 2013 Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN G Li, B Song, S Ganguly, M Zhu, R Wang, X Yan, J Verma, V Protasenko, ...
Applied physics letters 104 (19), 2014
71 2014 Threshold Voltage Control in G Li, T Zimmermann, Y Cao, C Lian, X Xing, R Wang, P Fay, HG Xing, ...
IEEE electron device letters 31 (9), 954-956, 2010
67 2010 Ultrathin body GaN-on-insulator quantum well FETs with regrown ohmic contacts G Li, R Wang, J Guo, J Verma, Z Hu, Y Yue, F Faria, Y Cao, M Kelly, ...
IEEE electron device letters 33 (5), 661-663, 2012
57 2012 InGaN channel high-electron-mobility transistors with InAlGaN barrier and fT/fmax of 260/220 GHz R Wang, G Li, G Karbasian, J Guo, F Faria, Z Hu, Y Yue, J Verma, ...
Applied Physics Express 6 (1), 016503, 2012
56 2012 InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition O Laboutin, Y Cao, W Johnson, R Wang, G Li, D Jena, H Xing
Applied Physics Letters 100 (12), 2012
51 2012 Effect of fringing capacitances on the RF performance of GaN HEMTs with T-gates B Song, B Sensale-Rodriguez, R Wang, J Guo, Z Hu, Y Yue, F Faria, ...
IEEE Transactions on Electron Devices 61 (3), 747-754, 2014
49 2014 High-performance monolithically-integrated E/D mode InAlN/AlN/GaN HEMTs for mixed-signal applications Y Tang, P Saunier, R Wang, A Ketterson, X Gao, S Guo, G Snider, D Jena, ...
2010 International Electron Devices Meeting, 30.4. 1-30.4. 4, 2010
42 2010 Improving Performances of Enhancement-Mode AlGaN/GaN MIS-HEMTs on 6-inch Si Substrate Utilizing SiON/Al2 O3 Stack Dielectrics Z Sun, H Huang, R Wang, N Sun, P Tao, Y Ren, S Song, H Wang, S Li, ...
IEEE Electron Device Letters 41 (1), 135-138, 2019
40 2019 Monolithically integrated E/D-mode InAlN HEMTs with ƒt /ƒmax > 200/220 GHz B Song, B Sensale-Rodriguez, R Wang, A Ketterson, M Schuette, E Beam, ...
70th Device Research Conference, 1-2, 2012
26 2012 Improving gate reliability of 6-in E-mode GaN-based MIS-HEMTs by employing mixed oxygen and fluorine plasma treatment N Sun, H Huang, Z Sun, R Wang, S Li, P Tao, Y Ren, S Song, H Wang, ...
IEEE Transactions on Electron Devices 69 (1), 82-87, 2021
22 2021 
Huili Grace XingProf. of ECE & MSE, Cornell UniversityΗ διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα cornell.edu
