SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review O Olorunsola, A Said, S Ojo, H Stanchu, G Abernathy, S Amoah, S Saha, ...
Journal of Physics D: Applied Physics 55 (44), 443001, 2022
13 2022 Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications O Olorunsola, A Said, S Ojo, G Abernathy, S Saha, E Wangila, J Grant, ...
Journal of Physics D: Applied Physics 55 (30), 305101, 2022
10 2022 The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy C Gunder, FM de Oliveira, E Wangila, H Stanchu, M Zamani-Alavijeh, ...
RSC advances 14 (2), 1250-1257, 2024
6 2024 Silicon-based electrically injected GeSn lasers S Ojo, Y Zhou, S Acharya, N Saunders, S Amoah, YT Jheng, H Tran, ...
Physics and Simulation of Optoelectronic Devices XXX 11995, 78-83, 2022
6 2022 Single crystal growth and characterization of topological semimetal ZrSnTe S Acharya, K Pandey, R Basnet, G Acharya, MRU Nabi, J Wang, J Hu
Journal of Alloys and Compounds 968, 171903, 2023
5 2023 Electrically Injected mid-infrared GeSn laser on Si operating at 140 K S Acharya, H Stanchu, R Kumar, S Ojo, M Alher, M Benamara, GE Chang, ...
IEEE Journal of Selected Topics in Quantum Electronics, 2024
4 2024 Challenges for room temperature operation of electrically pumped GeSn lasers AR Ellis, DA Duffy, IP Marko, S Acharya, W Du, SQ Yu, SJ Sweeney
Scientific Reports 14 (1), 10318, 2024
3 2024 Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers H Stanchu, A Said, O Olorunsola, S Acharya, S Amoah, ...
Journal of Vacuum Science & Technology B 41 (5), 2023
3 2023 Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate H Stanchu, S Kryvyi, S Margiotta, M Cook, J Grant, H Tran, S Acharya, ...
Journal of Physics D: Applied Physics 57 (25), 255107, 2024
2 2024 Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells S Ojo, H Stanchu, S Acharya, A Said, S Amoah, M Benamara, C Li, ...
Journal of Crystal Growth 605, 127062, 2023
1 2023 Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy Y Liu, J Gong, S Acharya, Y Li, A Abrand, F Fei, JM Rudie, J Zhou, Y Lu, ...
Applied Surface Science 685, 162006, 2025
2025 Development of All Group IV SiGeSn Mid Infrared Semiconductor Laser S Acharya, R Kumar, H Stanchu, B Li, W Du, SQ Yu
2024 IEEE 29th International Semiconductor Laser Conference (ISLC), 1-2, 2024
2024 Challenges for Room Temperature Electrically Injected GeSn Semiconductor Lasers A Ellis, DA Duffy, IP Marko, S Acharya, W Du, SJ Sweeney
2024 IEEE 29th International Semiconductor Laser Conference (ISLC), 1-2, 2024
2024 Grafted AlGaAs/GeSn Optical Pumping Laser Operating up to 130 K J Zhou, D Vincent, S Acharya, S Ojo, A Abrand, Y Liu, J Gong, D Liu, ...
arXiv preprint arXiv:2409.09752, 2024
2024 Development of GeSn epitaxial films with strong direct bandgap luminescence in the mid-wave infrared region using a commercial chemical vapor deposition reactor N Rosson, S Acharya, AM Fischer, B Collier, A Ali, A Torabi, W Du, SQ Yu, ...
Journal of Vacuum Science & Technology B 42 (5), 2024
2024 AlGaAs/GeSn p-i-n diode interfaced with ultrathin Al Y Liu, Y Li, S Acharya, J Zhou, J Gong, A Abrand, Y Lu, D Vincent, ...
arXiv preprint arXiv:2408.08451, 2024
2024 Electrically Injected GeSn Laser Operating up to 135 K S Acharya, Y Zhou, S Amoah, RK Jha, W Du, B Li, SQ Yu
2024 Conference on Lasers and Electro-Optics (CLEO), 1-2, 2024
2024 Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits O Olorunsola, A Said, S Ojo, H Stanchu, G Abernathy, S Amoah, S Saha, ...
Silicon Photonics XVIII 12426, 71-74, 2023
2023 Development of embedded atom method interatomic potentials for Ge-Sn-Si ternary and constituent binary alloys for modeling material crystallization S Acharya
Wright State University, 2020
2020 