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| Recent progress on localized field enhanced two‐dimensional material photodetectors from ultraviolet—visible to infrared J Wang, H Fang, X Wang, X Chen, W Lu, W Hu Small 13 (35), 1700894, 2017 | 354 | 2017 |
| High‐Performance Photovoltaic Detector Based on MoTe2/MoS2 Van der Waals Heterostructure Y Chen, X Wang, G Wu, Z Wang, H Fang, T Lin, S Sun, H Shen, W Hu, ... Small 14 (9), 1703293, 2018 | 290 | 2018 |
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| Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains G Wu, B Tian, L Liu, W Lv, S Wu, X Wang, Y Chen, J Li, Z Wang, S Wu, ... Nature Electronics 3 (1), 43-50, 2020 | 230 | 2020 |
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| Ultrasensitive negative capacitance phototransistors L Tu, R Cao, X Wang, Y Chen, S Wu, F Wang, Z Wang, H Shen, T Lin, ... Nature communications 11 (1), 101, 2020 | 158 | 2020 |
| Ultra-sensitive polarization-resolved black phosphorus homojunction photodetector defined by ferroelectric domains S Wu, Y Chen, X Wang, H Jiao, Q Zhao, X Huang, X Tai, Y Zhou, H Chen, ... Nature communications 13 (1), 3198, 2022 | 152 | 2022 |
| When nanowires meet ultrahigh ferroelectric field–high-performance full-depleted nanowire photodetectors D Zheng, J Wang, W Hu, L Liao, H Fang, N Guo, P Wang, F Gong, ... Nano letters 16 (4), 2548-2555, 2016 | 149 | 2016 |
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| Ferroelectric-tuned van der Waals heterojunction with band alignment evolution Y Chen, X Wang, L Huang, X Wang, W Jiang, Z Wang, P Wang, B Wu, ... Nature Communications 12 (1), 4030, 2021 | 131 | 2021 |
| Two-dimensional negative capacitance transistor with polyvinylidene fluoride-based ferroelectric polymer gating X Wang, Y Chen, G Wu, D Li, L Tu, S Sun, H Shen, T Lin, Y Xiao, M Tang, ... npj 2D Materials and Applications 1 (1), 38, 2017 | 118 | 2017 |
| Ferroelectric localized field–enhanced ZnO nanosheet ultraviolet photodetector with high sensitivity and low dark current P Wang, Y Wang, L Ye, M Wu, R Xie, X Wang, X Chen, Z Fan, J Wang, ... Small 14 (22), 1800492, 2018 | 114 | 2018 |
| Ferroelectric FET for nonvolatile memory application with two-dimensional MoSe2 channels X Wang, C Liu, Y Chen, G Wu, X Yan, H Huang, P Wang, B Tian, Z Hong, ... 2D Materials 4 (2), 025036, 2017 | 110 | 2017 |
| HgCdTe/black phosphorus van der Waals heterojunction for high-performance polarization-sensitive midwave infrared photodetector H Jiao, X Wang, Y Chen, S Guo, S Wu, C Song, S Huang, X Huang, X Tai, ... Science Advances 8 (19), eabn1811, 2022 | 104 | 2022 |
| Ultrabroadband Photodetectors up to 10.6 µm Based on 2D Fe3O4 Nanosheets C Yin, C Gong, J Chu, X Wang, C Yan, S Qian, Y Wang, G Rao, H Wang, ... Advanced Materials 32 (25), 2002237, 2020 | 90 | 2020 |
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| Ultrasensitive Hybrid MoS2–ZnCdSe Quantum Dot Photodetectors with High Gain S Zhang, X Wang, Y Chen, G Wu, Y Tang, L Zhu, H Wang, W Jiang, L Sun, ... ACS applied materials & interfaces 11 (26), 23667-23672, 2019 | 84 | 2019 |
| Optoelectronic Properties of Few-Layer MoS2 FET Gated by Ferroelectric Relaxor Polymer Y Chen, X Wang, P Wang, H Huang, G Wu, B Tian, Z Hong, Y Wang, ... ACS applied materials & interfaces 8 (47), 32083-32088, 2016 | 83 | 2016 |
Jianlu WangFudan UniversityΗ διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα fudan.edu.cn
