| Crystalline polymer nanofibers with ultra-high strength and thermal conductivity R Shrestha, P Li, B Chatterjee, T Zheng, X Wu, Z Liu, T Luo, S Choi, ... Nature communications 9 (1), 1664, 2018 | 151 | 2018 |
| Device-level thermal management of gallium oxide field-effect transistors B Chatterjee, K Zeng, CD Nordquist, U Singisetti, S Choi IEEE Transactions on Components, Packaging and Manufacturing Technology 9 …, 2019 | 134 | 2019 |
| Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors B Chatterjee, C Dundar, TE Beechem, E Heller, D Kendig, H Kim, ... Journal of Applied Physics 127 (4), 2020 | 84 | 2020 |
| Thermal characterization of gallium nitride pin diodes J Dallas, G Pavlidis, B Chatterjee, JS Lundh, M Ji, J Kim, T Kao, ... Applied Physics Letters 112 (7), 2018 | 65 | 2018 |
| Thermal characterization of gallium oxide Schottky barrier diodes B Chatterjee, A Jayawardena, E Heller, DW Snyder, S Dhar, S Choi Review of Scientific Instruments 89 (11), 2018 | 61 | 2018 |
| Thermal management and characterization of high-power wide-bandgap semiconductor electronic and photonic devices in automotive applications SK Oh, JS Lundh, S Shervin, B Chatterjee, DK Lee, S Choi, JS Kwak, ... Journal of Electronic Packaging 141 (2), 020801, 2019 | 50 | 2019 |
| Electro-thermal co-design of β-(AlxGa1-x) 2O3/Ga2O3 modulation doped field effect transistors B Chatterjee, Y Song, JS Lundh, Y Zhang, Z Xia, Z Islam, J Leach, ... Applied Physics Letters 117 (15), 2020 | 48 | 2020 |
| Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor JS Lundh, B Chatterjee, Y Song, AG Baca, RJ Kaplar, TE Beechem, ... Applied Physics Letters 115 (15), 2019 | 43 | 2019 |
| Diamond-incorporated flip-chip integration for thermal management of GaN and ultra-wide bandgap RF power amplifiers D Shoemaker, M Malakoutian, B Chatterjee, Y Song, S Kim, BM Foley, ... IEEE Transactions on Components, Packaging and Manufacturing Technology 11 …, 2021 | 39 | 2021 |
| Thermal design of multi-fin Ga2O3 vertical transistors B Chatterjee, W Li, K Nomoto, HG Xing, S Choi Applied Physics Letters 119 (10), 2021 | 32 | 2021 |
| Interdependence of Electronic and Thermal Transport in AlxGa1–xN Channel HEMTs B Chatterjee, JS Lundh, Y Song, D Shoemaker, AG Baca, RJ Kaplar, ... IEEE Electron Device Letters 41 (3), 461-464, 2020 | 29 | 2020 |
| Electro-thermal reliability study of GaN high electron mobility transistors B Chatterjee, JS Lundh, J Dallas, H Kim, S Choi 2017 16th IEEE Intersociety Conference on Thermal and Thermomechanical …, 2017 | 28 | 2017 |
| Cumulative impacts of proton irradiation on the self-heating of AlGaN/GaN HEMTs B Chatterjee, D Shoemaker, Y Song, T Shi, HL Huang, D Keum, ... ACS Applied Electronic Materials 2 (4), 980-991, 2020 | 23 | 2020 |
| Guidelines for reduced-order thermal modeling of multifinger GaN HEMTs R Pearson, B Chatterjee, S Kim, S Graham, A Rattner, S Choi Journal of Electronic Packaging 142 (2), 021012, 2020 | 20 | 2020 |
| DEVICE-LEVEL MULTIDIMENSIONAL THERMAL DYNAMICS WITH IMPLICATIONS FOR CURRENT AND FUTURE WIDE BANDGAP ELECTRONICS JS Lundh, Y Song, B Chatterjee, AG Baca, RJ Kaplar, AM Armstrong, ... Journal of Electronic Packaging, 2020 | 20 | 2020 |
| Thermally-Aware Layout Design of β-Ga₂O₃ Lateral MOSFETs SH Kim, D Shoemaker, B Chatterjee, AJ Green, KD Chabak, ER Heller, ... IEEE Transactions on Electron Devices 69 (3), 1251-1257, 2022 | 19 | 2022 |
| Electro-thermal investigation of GaN vertical trench MOSFETs B Chatterjee, D Ji, A Agarwal, SH Chan, S Chowdhury, S Choi IEEE Electron Device Letters 42 (5), 723-726, 2021 | 18 | 2021 |
| Polarization modulation effect of BeO on AlGaN/GaN high-electron-mobility transistors W Wang, SM Lee, S Pouladi, J Chen, S Shervin, S Yoon, JH Yum, ... Applied Physics Letters 115 (10), 2019 | 11 | 2019 |
| Integrated temperature mapping of lateral gallium nitride electronics JS Lundh, B Chatterjee, J Dallas, H Kim, S Choi 2017 16th IEEE Intersociety Conference on Thermal and Thermomechanical …, 2017 | 10 | 2017 |
| AlGaN/GaN HEMT device physics and electrothermal modeling B Chatterjee, D Shoemaker, HY Wong, S Choi Thermal Management of Gallium Nitride Electronics, 103-163, 2022 | 8 | 2022 |
Sukwon ChoiAssociate Professor of Mechanical Engineering, The Pennsylvania State UniversityΗ διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα psu.edu
