Παρακολούθηση
Shibo Fang
Shibo Fang
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα sutd.edu.sg
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Holey graphite: A promising anode material with ultrahigh storage for lithium-ion battery
C Yang, X Zhang, J Li, J Ma, L Xu, J Yang, S Liu, S Fang, Y Li, X Sun, ...
Electrochimica Acta 346, 136244, 2020
632020
Layer-Dependent Giant Magnetoresistance in Two-Dimensional Magnetic Tunnel Junctions
J Yang, S Fang, Y Peng, S Liu, B Wu, R Quhe, S Ding, C Yang, J Ma, ...
Physical Review Applied 16 (2), 024011, 2021
402021
Is graphite nanomesh a promising anode for the Na/K-Ions batteries?
C Yang, X Sun, X Zhang, J Li, J Ma, Y Li, L Xu, S Liu, J Yang, S Fang, Q Li, ...
Carbon 176, 242-252, 2021
362021
Performance limit of ultrathin GaAs transistors
Q Li, S Fang, S Liu, L Xu, L Xu, C Yang, J Yang, B Shi, J Ma, J Yang, ...
ACS Applied Materials & Interfaces 14 (20), 23597-23609, 2022
332022
Performance Limit of Gate-All-Around Nanowire Field-Effect Transistors: An Ab Initio Quantum Transport Simulation
S Liu, Q Li, C Yang, J Yang, L Xu, L Xu, J Ma, Y Li, S Fang, B Wu, J Dong, ...
Physical Review Applied 18 (5), 054089, 2022
232022
Symmetric and Excellent Scaling Behavior in Ultrathin n‐ and p‐Type Gate‐All‐Around InAs Nanowire Transistors
Q Li, C Yang, L Xu, S Liu, S Fang, L Xu, J Yang, J Ma, Y Li, B Wu, R Quhe, ...
Advanced Functional Materials 33 (23), 2214653, 2023
222023
Scaling Behavior of Magnetoresistance with the Layer Number in Magnetic Tunnel Junctions
B Wu, J Yang, R Quhe, S Liu, C Yang, Q Li, J Ma, Y Peng, S Fang, J Shi, ...
Physical Review Applied 17 (3), 034030, 2022
152022
Bilayer Tellurene: A Potential p‐Type Channel Material for Sub‐10 nm Transistors
Q Li, L Xu, S Liu, J Yang, S Fang, Y Li, J Ma, Z Zhang, R Quhe, J Yang, ...
Advanced Theory and Simulations 4 (2), 2000252, 2021
152021
Monolayer : A promising channel material for sub-5-nm-gate homogeneous CMOS devices
Y Li, C Qi, X Zhou, L Xu, Q Li, S Liu, C Yang, S Liu, L Xu, J Dong, S Fang, ...
Physical Review Applied 20 (6), 064044, 2023
102023
High-Performance Based (x =4 or 5) van der Waals Magnetic Tunnel Junctions
B Wu, S Fang, J Yang, S Liu, Y Peng, Q Li, Z Lin, J Shi, W Yang, Z Luo, ...
Physical Review Applied 19 (2), 024037, 2023
102023
Layer-Dependent Magnetoresistance and Spin-Transfer Torque in -Based Magnetic Tunnel Junctions
B Wu, J Yang, S Liu, S Fang, Z Liu, Z Lin, J Shi, W Yang, Z Luo, C Wang, ...
Physical Review Applied 19 (6), 064008, 2023
92023
Ferroelectric-Tunable Photoresponse in α- Photovoltaic Photodetectors: An Ab Initio Quantum Transport Study
S Fang, C Yang, Q Li, B Wu, L Xu, S Liu, J Yang, J Ma, J Dong, Y Li, ...
Physical Review Applied 19 (2), 024024, 2023
92023
Polarization tunable bidirectional photoresponse in Van der Waals () ferroelectric diodes
S Fang, Q Li, C Yang, B Wu, S Liu, J Yang, J Ma, Z Yang, K Tang, J Lu
Physical Review Materials 7 (8), 084412, 2023
42023
Sub-5 nm Gate-All-Around InP Nanowire Transistors toward High-Performance Devices
L Xu, L Xu, Q Li, S Fang, Y Li, Y Guo, A Wang, R Quhe, YS Ang, J Lu
ACS Applied Electronic Materials 6 (1), 426-434, 2023
32023
Tunable spin photogalvanic effect in two-dimensional van der Waals ferroelectric semiconductors with spin-orbit coupling
S Fang, M Wang, X Yang, Z Yang, Q Li, Z Luo, J Lu
Physical Review B 109 (19), 195202, 2024
22024
3D Hierarchical Graphene‐CNT Anode for Sodium‐Ion Batteries: a First‐Principles Assessment
J Ma, C Yang, Q Li, S Liu, L Xu, S Fang, X Sun, R Quhe, F Pan, J Lu
Advanced Theory and Simulations 5 (10), 2200227, 2022
22022
Bilayer TeO2: The First Oxide Semiconductor with Symmetric Sub-5-nm NMOS and PMOS
L Xu, L Zhao, CS Lau, P Zhang, L Xu, Q Li, S Fang, YS Ang, X Sun, J Lu
arXiv preprint arXiv:2408.07339, 2024
12024
Light-assisted Néel spin currents in -symmetric antiferromagnetic semiconductors
S Fang, B Wu, Q Li, Z Yang, H Du, J Yang, Z Luo, J Lu
Physical Review B 109 (8), 085201, 2024
12024
Quantum transport simulation of α-GeTe ferroelectric semiconductor transistors
Q Li, Z Yang, X Yang, W Zhou, C Yang, X Sun, S Fang, J Lu
Journal of Materials Chemistry C 13 (2), 568-577, 2025
2025
Photodetector Based on Elemental Ferroelectric Black Phosphorus-like Bismuth
Q Li, S Fang, X Yang, Z Yang, Q Li, W Zhou, D Ren, X Sun, J Lu
ACS Applied Materials & Interfaces 16 (46), 63786-63794, 2024
2024
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