Παρακολούθηση
Alan G. Jacobs
Alan G. Jacobs
Naval Research Laboratory
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα cornell.edu
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Παρατίθεται από
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A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3
JA Spencer, AL Mock, AG Jacobs, M Schubert, Y Zhang, MJ Tadjer
Applied Physics Reviews 9 (1), 2022
2392022
Nanowire-quantum-dot solar cells and the influence of nanowire length on the charge collection efficiency
KS Leschkies, AG Jacobs, DJ Norris, ES Aydil
Applied Physics Letters 95 (19), 2009
1102009
10-kV Ga2O3 Charge-Balance Schottky Rectifier Operational at 200 °C
Y Qin, M Xiao, M Porter, Y Ma, J Spencer, Z Du, AG Jacobs, K Sasaki, ...
IEEE Electron Device Letters 44 (8), 1268-1271, 2023
492023
Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates
MJ Tadjer, F Alema, A Osinsky, MA Mastro, N Nepal, JM Woodward, ...
Journal of Physics D: Applied Physics 54 (3), 034005, 2020
452020
Ultrafast Self-Assembly of Sub-10 nm Block Copolymer Nanostructures by Solvent-Free High-Temperature Laser Annealing
J Jiang, AG Jacobs, B Wenning, C Liedel, MO Thompson, CK Ober
ACS applied materials & interfaces 9 (37), 31317-31324, 2017
402017
Lateral Temperature-Gradient Method for High-Throughput Characterization of Material Processing by Millisecond Laser Annealing
RT Bell, AG Jacobs, VC Sorg, B Jung, MO Hill, BE Treml, MO Thompson
ACS Combinatorial Science 18 (9), 548-558, 2016
352016
Atomic-scale characterization of structural damage and recovery in Sn ion-implanted β-Ga2O3
T Yoo, X Xia, F Ren, A Jacobs, MJ Tadjer, S Pearton, H Kim
Applied Physics Letters 121 (7), 2022
322022
Kinetics of Block Copolymer Phase Segregation during Sub-millisecond Transient Thermal Annealing
AG Jacobs, C Liedel, H Peng, L Wang, DM Smilgies, CK Ober, ...
Macromolecules 49 (17), 6462-6470, 2016
262016
Control of PS-b-PMMA directed self-assembly registration by laser induced millisecond thermal annealing
AG Jacobs, B Jung, CK Ober, MO Thompson
Proc. SPIE 9049, 90492B, 2014
242014
A Simple Edge Termination Design for Vertical GaN PN Diodes
P Pandey, TM Nelson, WM Collings, MR Hontz, DG Georgiev, AD Koehler, ...
IEEE Transactions on Electron Devices 69 (9), 5096-5103, 2022
202022
Delta-doped β-(AlxGa1− x) 2O3/Ga2O3 heterostructure field-effect transistors by ozone molecular beam epitaxy
MJ Tadjer, K Sasaki, D Wakimoto, TJ Anderson, MA Mastro, JC Gallagher, ...
Journal of Vacuum Science & Technology A 39 (3), 2021
202021
Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques
JC Gallagher, MA Ebrish, MA Porter, AG Jacobs, BP Gunning, RJ Kaplar, ...
Scientific Reports 12 (1), 658, 2022
182022
Wide‐bandgap nickel oxide with tunable acceptor concentration for multidimensional power devices
Y Ma, Y Qin, M Porter, J Spencer, Z Du, M Xiao, B Wang, Y Wang, ...
Advanced Electronic Materials, 2300662, 2023
142023
Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3: N with high mobility
JA Spencer, MJ Tadjer, AG Jacobs, MA Mastro, JL Lyons, JA Freitas, ...
Applied Physics Letters 121 (19), 2022
142022
Control of polystyrene-block-poly (methyl methacrylate) directed self-assembly by laser-induced millisecond thermal annealing
AG Jacobs, B Jung, J Jiang, CK Ober, MO Thompson
Journal of Micro/Nanolithography, MEMS, and MOEMS 14 (3), 031205-031205, 2015
142015
Development of High-Voltage Vertical GaN PN Diodes
RJ Kaplar, BP Gunning, AA Allerman, MH Crawford, JD Flicker, ...
2020 IEEE International Electron Devices Meeting (IEDM), 5.1. 1-5.1. 4, 2020
132020
Long-wavelength dielectric properties and infrared active optical phonon modes of molecular beam epitaxy ScxAl1− xN determined by infrared spectroscopic ellipsometry
AL Mock, AG Jacobs, EN Jin, MT Hardy, MJ Tadjer
Applied Physics Letters 117 (23), 2020
132020
Laser Spike Annealing of DSA Photoresists
J Jiang, A Jacobs, MO Thompson, CK Ober
Journal of Photopolymer Science and Technology 28 (5), 631-634, 2015
132015
Role of Capping Material and GaN Polarity on Mg Ion Implantation Activation
AG Jacobs, BN Feigelson, JK Hite, CA Gorsak, LE Luna, TJ Anderson, ...
physica status solidi (a) 217 (7), 1900789, 2020
122020
Polarity dependent implanted p-type dopant activation in GaN
AG Jacobs, BN Feigelson, JK Hite, CA Gorsak, LE Luna, TJ Anderson, ...
Japanese Journal of Applied Physics 58 (SC), SCCD07, 2019
122019
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