MOCVD epitaxy of β-(AlxGa1− x) 2O3 thin films on (010) Ga2O3 substrates and N-type doping AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, Z Chen, HL Huang, ...
Applied Physics Letters 115 (12), 2019
171 2019 Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor JM Johnson, Z Chen, JB Varley, CM Jackson, E Farzana, Z Zhang, ...
Physical Review X 9 (4), 041027, 2019
148 2019 Phase transformation in MOCVD growth of (AlxGa1− x) 2O3 thin films AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, ...
APL Materials 8 (3), 2020
137 2020 MOCVD Epitaxy of Ultrawide Bandgap β-(Alx Ga1–x )2 O3 with High-Al Composition on (100) β-Ga2 O3 Substrates AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, ...
Crystal Growth & Design 20 (10), 6722-6730, 2020
98 2020 β-(Al0.18 Ga0.82 )2 O3 /Ga2 O3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm NK Kalarickal, Z Xia, HL Huang, W Moore, Y Liu, M Brenner, J Hwang, ...
IEEE Electron Device Letters 42 (6), 899-902, 2021
91 2021 Ga2 O3 -on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics Y Song, D Shoemaker, JH Leach, C McGray, HL Huang, A Bhattacharyya, ...
ACS Applied Materials & Interfaces 13 (34), 40817-40829, 2021
71 2021 Band offsets of (100) β-(AlxGa1− x) 2O3/β-Ga2O3 heterointerfaces grown via MOCVD AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, H Zhao
Applied Physics Letters 117 (25), 2020
61 2020 Atomic scale investigation of aluminum incorporation, defects, and phase stability in β-(AlxGa1− x) 2O3 films JM Johnson, HL Huang, M Wang, S Mu, JB Varley, AFM Uddin Bhuiyan, ...
APL Materials 9 (5), 2021
55 2021 MOCVD growth of β-phase (AlxGa1− x) 2O3 on (2¯ 01) β-Ga2O3 substrates AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, H Zhao
Applied Physics Letters 117 (14), 2020
55 2020 Metalorganic chemical vapor deposition of α-Ga2O3 and α-(AlxGa1− x) 2O3 thin films on m-plane sapphire substrates AFM Bhuiyan, Z Feng, HL Huang, L Meng, J Hwang, H Zhao
APL Materials 9 (10), 2021
54 2021 Thermal Conductivity of β-Phase Ga2 O3 and (Alx Ga1– x )2 O3 Heteroepitaxial Thin Films Y Song, P Ranga, Y Zhang, Z Feng, HL Huang, MD Santia, SC Badescu, ...
ACS applied materials & interfaces 13 (32), 38477-38490, 2021
40 2021 Atomic scale defect formation and phase transformation in Si implanted β-Ga2O3 HL Huang, C Chae, JM Johnson, A Senckowski, S Sharma, U Singisetti, ...
APL Materials 11 (6), 2023
33 2023 Planar and three-dimensional damage-free etching of β-Ga2O3 using atomic gallium flux NK Kalarickal, A Fiedler, S Dhara, HL Huang, AFM Bhuiyan, MW Rahman, ...
Applied Physics Letters 119 (12), 2021
33 2021 Ultra-Wide Band Gap Ga2 O3 -on-SiC MOSFETs Y Song, A Bhattacharyya, A Karim, D Shoemaker, HL Huang, S Roy, ...
ACS Applied Materials & Interfaces 15 (5), 7137-7147, 2023
31 2023 Thermal Transport across Metal/β-Ga2 O3 Interfaces J Shi, C Yuan, HL Huang, J Johnson, C Chae, S Wang, R Hanus, S Kim, ...
ACS Applied Materials & Interfaces 13 (24), 29083-29091, 2021
30 2021 Band offsets at metalorganic chemical vapor deposited β-(AlxGa1− x) 2O3/β-Ga2O3 interfaces—Crystalline orientation dependence AFM Bhuiyan, Z Feng, HL Huang, L Meng, J Hwang, H Zhao
Journal of Vacuum Science & Technology A 39 (6), 2021
27 * 2021 Si doping in MOCVD grown (010) β-(AlxGa1− x) 2O3 thin films AFM Bhuiyan, Z Feng, L Meng, A Fiedler, HL Huang, AT Neal, ...
Journal of Applied Physics 131 (14), 2022
25 2022 Two-step growth of β-Ga2O3 films on (100) diamond via low pressure chemical vapor deposition MR Karim, Z Chen, Z Feng, HL Huang, JM Johnson, MJ Tadjer, J Hwang, ...
Journal of Vacuum Science & Technology A 39 (2), 2021
23 2021 Cumulative impacts of proton irradiation on the self-heating of AlGaN/GaN HEMTs B Chatterjee, D Shoemaker, Y Song, T Shi, HL Huang, D Keum, ...
ACS Applied Electronic Materials 2 (4), 980-991, 2020
23 2020 Atomic scale mechanism of β to γ phase transformation in gallium oxide HL Huang, JM Johnson, C Chae, A Senckowski, MH Wong, J Hwang
Applied Physics Letters 122 (25), 2023
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