| A comprehensive review on emerging artificial neuromorphic devices J Zhu, T Zhang, Y Yang, R Huang Applied Physics Reviews 7 (1), 2020 | 698 | 2020 |
| Engineering incremental resistive switching in TaO x based memristors for brain-inspired computing Z Wang, M Yin, T Zhang, Y Cai, Y Wang, Y Yang, R Huang Nanoscale 8 (29), 14015-14022, 2016 | 335 | 2016 |
| Spiking neurons with spatiotemporal dynamics and gain modulation for monolithically integrated memristive neural networks Q Duan, Z Jing, X Zou, Y Wang, K Yang, T Zhang, S Wu, R Huang, ... Nature communications 11 (1), 3399, 2020 | 275 | 2020 |
| An optoelectronic synapse based on α-In2Se3 with controllable temporal dynamics for multimode and multiscale reservoir computing K Liu, T Zhang, B Dang, L Bao, L Xu, C Cheng, Z Yang, R Huang, Y Yang Nature Electronics 5 (11), 761-773, 2022 | 268 | 2022 |
| Conduction mechanisms, dynamics and stability in ReRAMs C Wang, H Wu, B Gao, T Zhang, Y Yang, H Qian Microelectronic Engineering 187, 121-133, 2018 | 144 | 2018 |
| Multilayer Reservoir Computing Based on Ferroelectric α‐In2Se3 for Hierarchical Information Processing K Liu, B Dang, T Zhang, Z Yang, L Bao, L Xu, C Cheng, R Huang, Y Yang Advanced Materials 34 (48), 2108826, 2022 | 108 | 2022 |
| Nonassociative learning implementation by a single memristor-based multi-terminal synaptic device X Yang, Y Fang, Z Yu, Z Wang, T Zhang, M Yin, M Lin, Y Yang, Y Cai, ... Nanoscale 8 (45), 18897-18904, 2016 | 91 | 2016 |
| Memristive Devices and Networks for Brain‐Inspired Computing T Zhang, K Yang, X Xu, Y Cai, Y Yang, R Huang physica status solidi (RRL)–Rapid Research Letters 13 (8), 1900029, 2019 | 88 | 2019 |
| A neuromorphic physiological signal processing system based on VO2 memristor for next-generation human-machine interface R Yuan, PJ Tiw, L Cai, Z Yang, C Liu, T Zhang, C Ge, R Huang, Y Yang Nature Communications 14 (1), 3695, 2023 | 83 | 2023 |
| Electrochemical‐Memristor‐Based Artificial Neurons and Synapses—Fundamentals, Applications, and Challenges S Chen, T Zhang, S Tappertzhofen, Y Yang, I Valov Advanced Materials 35 (37), 2301924, 2023 | 82 | 2023 |
| Improvement of HfOx-Based RRAM Device Variation by Inserting ALD TiN Buffer Layer Y Fang, Z Yu, Z Wang, T Zhang, Y Yang, Y Cai, R Huang IEEE Electron Device Letters 39 (6), 819-822, 2018 | 82 | 2018 |
| Multifunctional Nanoionic Devices Enabling Simultaneous Heterosynaptic Plasticity and Efficient In‐Memory Boolean Logic Y Yang, M Yin, Z Yu, Z Wang, T Zhang, Y Cai, WD Lu, R Huang Advanced Electronic Materials 3 (7), 1700032, 2017 | 69 | 2017 |
| Transiently chaotic simulated annealing based on intrinsic nonlinearity of memristors for efficient solution of optimization problems K Yang, Q Duan, Y Wang, T Zhang, Y Yang, R Huang Science advances 6 (33), eaba9901, 2020 | 68 | 2020 |
| High-speed true random number generation based on paired memristors for security electronics T Zhang, M Yin, C Xu, X Lu, X Sun, Y Yang, R Huang Nanotechnology 28 (45), 455202, 2017 | 60 | 2017 |
| Artificial multisensory neurons with fused haptic and temperature perception for multimodal in‐sensor computing Q Duan, T Zhang, C Liu, R Yuan, G Li, P Jun Tiw, K Yang, C Ge, Y Yang, ... Advanced Intelligent Systems 4 (8), 2200039, 2022 | 51 | 2022 |
| Stochastic neuron based on IGZO Schottky diodes for neuromorphic computing B Dang, K Liu, J Zhu, L Xu, T Zhang, C Cheng, H Wang, Y Yang, Y Hao, ... APL Materials 7 (7), 2019 | 45 | 2019 |
| Multi-terminal ionic-gated low-power silicon nanowire synaptic transistors with dendritic functions for neuromorphic systems X Li, B Yu, B Wang, L Bao, B Zhang, H Li, Z Yu, T Zhang, Y Yang, ... Nanoscale 12 (30), 16348-16358, 2020 | 41 | 2020 |
| Physically transient true random number generators based on paired threshold switches enabling Monte Carlo method applications B Dang, J Sun, T Zhang, S Wang, M Zhao, K Liu, L Xu, J Zhu, C Cheng, ... IEEE Electron Device Letters 40 (7), 1096-1099, 2019 | 32 | 2019 |
| Tuning analog resistive switching and plasticity in bilayer transition metal oxide based memristive synapses J Li, Q Duan, T Zhang, M Yin, X Sun, Y Cai, L Li, Y Yang, R Huang RSC advances 7 (68), 43132-43140, 2017 | 30 | 2017 |
| In‐memory realization of eligibility traces based on conductance drift of phase change memory for energy‐efficient reinforcement learning Y Lu, X Li, B Yan, L Yan, T Zhang, Z Song, R Huang, Y Yang Advanced Materials 34 (6), 2107811, 2022 | 28 | 2022 |
