Παρακολούθηση
Iuliana Radu
Iuliana Radu
TSMC
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα tsmc.com
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Παρατίθεται από
Παρατίθεται από
Έτος
10×10nm2Hf/HfOxcrossbar resistive RAM with excellent performance, reliability and low-energy operation
B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
2011 International Electron Devices Meeting, 31.6. 1-31.6. 4, 2011
9252011
Quasi-particle properties from tunneling in the v= 5/2 fractional quantum Hall state
IP Radu, JB Miller, CM Marcus, MA Kastner, LN Pfeiffer, KW West
Science 320 (5878), 899-902, 2008
4342008
Electrical control of spin relaxation in a quantum dot
S Amasha, K MacLean, IP Radu, DM Zumbühl, MA Kastner, MP Hanson, ...
Physical review letters 100 (4), 046803, 2008
3392008
High-quality, large-area MoSe 2 and MoSe 2/Bi 2 Se 3 heterostructures on AlN (0001)/Si (111) substrates by molecular beam epitaxy
E Xenogiannopoulou, P Tsipas, KE Aretouli, D Tsoutsou, SA Giamini, ...
Nanoscale 7 (17), 7896-7905, 2015
1662015
Understanding Energy Efficiency Benefits of Carbon Nanotube Field-Effect Transistors for Digital VLSI
G Hills, MG Bardon, G Doornbos, D Yakimets, P Schuddinck, R Baert, ...
Ieee Transactions On Nanotechnology 17 (6), 1259-1269, 2018
1452018
How to report and benchmark emerging field-effect transistors
Z Cheng, CS Pang, P Wang, ST Le, Y Wu, D Shahrjerdi, I Radu, ...
Nature Electronics 5 (7), 416-423, 2022
1362022
Doping-free complementary logic gates enabled by two-dimensional polarity-controllable transistors
GV Resta, Y Balaji, D Lin, IP Radu, F Catthoor, PE Gaillardon, ...
ACS nano 12 (7), 7039-7047, 2018
1342018
Fractional quantum Hall effect in a quantum point contact at filling fraction 5/2
JB Miller, IP Radu, DM Zumbühl, EM Levenson-Falk, MA Kastner, ...
Nature Physics 3 (8), 561-565, 2007
1212007
Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell
B Govoreanu, A Redolfi, L Zhang, C Adelmann, M Popovici, S Clima, ...
2013 IEEE International Electron Devices Meeting, 10.2. 1-10.2. 4, 2013
1092013
Low temperature deposition of 2D WS 2 layers from WF 6 and H 2 S precursors: impact of reducing agents
A Delabie, M Caymax, B Groven, M Heyne, K Haesevoets, J Meersschaut, ...
Chemical Communications 51 (86), 15692-15695, 2015
1082015
2D materials: roadmap to CMOS integration
C Huyghebaert, T Schram, Q Smets, TK Agarwal, D Verreck, S Brems, ...
2018 IEEE International Electron Devices Meeting (IEDM), 22.1. 1-22.1. 4, 2018
1072018
Energy-dependent tunneling in a quantum dot
K MacLean, S Amasha, IP Radu, DM Zumbühl, MA Kastner, MP Hanson, ...
Physical review letters 98 (3), 036802, 2007
1062007
All electrical propagating spin wave spectroscopy with broadband wavevector capability
F Ciubotaru, T Devolder, M Manfrini, C Adelmann, IP Radu
Applied Physics Letters 109 (1), 2016
1042016
Future Logic Scaling: Towards Atomic Channels and Deconstructed Chips
SB Samavedam, J Ryckaert, E Beyne, K Ronse, N Horiguchi, Z Tokei, ...
2020 IEEE International Electron Devices Meeting (IEDM), 1.1. 1-1.1. 10, 2020
1022020
Ultra-scaled MOCVD MoS2 MOSFETs with 42nm contact pitch and 250µA/µm drain current
Q Smets, G Arutchelvan, J Jussot, D Verreck, I Asselberghs, AN Mehta, ...
2019 IEEE International Electron Devices Meeting (IEDM), 23.2. 1-23.2. 4, 2019
1022019
Polarity control in WSe2 double-gate transistors
GV Resta, S Sutar, Y Balaji, D Lin, P Raghavan, I Radu, F Catthoor, ...
Scientific reports 6 (1), 29448, 2016
992016
Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
B Groven, M Heyne, A Nalin Mehta, H Bender, T Nuytten, J Meersschaut, ...
Chemistry of Materials 29 (7), 2927-2938, 2017
982017
Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
B Groven, M Heyne, A Nalin Mehta, H Bender, T Nuytten, J Meersschaut, ...
Chemistry of Materials 29 (7), 2927-2938, 2017
982017
Metal‐Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control
AP Peter, K Martens, G Rampelberg, M Toeller, JM Ablett, J Meersschaut, ...
Advanced Functional Materials 25 (5), 679-686, 2015
982015
Investigation of Microwave Loss Induced by Oxide Regrowth in High-Q Niobium Resonators
J Verjauw, A Potočnik, M Mongillo, R Acharya, F Mohiyaddin, G Simion, ...
Physical Review Applied 16 (1), 014018, 2021
952021
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