| 633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress D Iida, Z Zhuang, P Kirilenko, M Velazquez-Rizo, MA Najmi, K Ohkawa Applied Physics Letters 116 (16), 2020 | 142 | 2020 |
| GaInN-based solar cells using strained-layer GaInN/GaInN superlattice active layer on a freestanding GaN substrate Y Kuwahara, T Fujii, T Sugiyama, D Iida, Y Isobe, Y Fujiyama, Y Morita, ... Applied physics express 4 (2), 021001, 2011 | 108 | 2011 |
| Demonstration of low forward voltage InGaN-based red LEDs D Iida, Z Zhuang, P Kirilenko, M Velazquez-Rizo, K Ohkawa Applied physics express 13 (3), 031001, 2020 | 84 | 2020 |
| Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN AM Fischer, Z Wu, K Sun, Q Wei, Y Huang, R Senda, D Iida, M Iwaya, ... Applied Physics Express 2 (4), 041002, 2009 | 84 | 2009 |
| Study on the effect of size on InGaN red micro-LEDs RH Horng, CX Ye, PW Chen, D Iida, K Ohkawa, YR Wu, DS Wuu Scientific reports 12 (1), 1324, 2022 | 74 | 2022 |
| InGaN-based red light-emitting diodes: from traditional to micro-LEDs Z Zhuang, D Iida, K Ohkawa Japanese Journal of Applied Physics 61 (SA), SA0809, 2021 | 72 | 2021 |
| Demonstration of InGaN-based orange LEDs with hybrid multiple-quantum-wells structure D Iida, K Niwa, S Kamiyama, K Ohkawa Applied Physics Express 9 (11), 111003, 2016 | 72 | 2016 |
| Recent progress in red light-emitting diodes by III-nitride materials D Iida, K Ohkawa Semiconductor Science and Technology 37 (1), 013001, 2021 | 71 | 2021 |
| The micro-LED roadmap: status quo and prospects CC Lin, YR Wu, HC Kuo, MS Wong, SP DenBaars, S Nakamura, ... Journal of Physics: Photonics 5 (4), 042502, 2023 | 70 | 2023 |
| Investigation of InGaN-based red/green micro-light-emitting diodes Z Zhuang, D Iida, K Ohkawa Optics Letters 46 (8), 1912-1915, 2021 | 64 | 2021 |
| Enhanced light output power of InGaN-based amber LEDs by strain-compensating AlN/AlGaN barriers D Iida, S Lu, S Hirahara, K Niwa, S Kamiyama, K Ohkawa Journal of Crystal Growth 448, 105-108, 2016 | 62 | 2016 |
| Effects of size on the electrical and optical properties of InGaN-based red light-emitting diodes Z Zhuang, D Iida, K Ohkawa Applied Physics Letters 116 (17), 2020 | 49 | 2020 |
| Demonstration of 621-nm-wavelength InGaN-based single-quantum-well LEDs with an external quantum efficiency of 4.3% at 10.1 A/cm2 D Iida, P Kirilenko, M Velazquez-Rizo, Z Zhuang, MA Najmi, K Ohkawa AIP Advances 12 (6), 2022 | 46 | 2022 |
| Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes Z Zhuang, D Iida, P Kirilenko, M Velazquez-Rizo, K Ohkawa Optics Express 28 (8), 12311-12321, 2020 | 46 | 2020 |
| Surface plasmon coupling dynamics in InGaN/GaN quantum-well structures and radiative efficiency improvement A Fadil, D Iida, Y Chen, J Ma, Y Ou, PM Petersen, H Ou Scientific reports 4 (1), 6392, 2014 | 46 | 2014 |
| 630-nm red InGaN micro-light-emitting diodes (<20 μm × 20 μm) exceeding 1 mW/mm2 for full-color micro-displays Z Zhuang, D Iida, M Velazquez-Rizo, K Ohkawa Photonics Research 9 (9), 1796-1802, 2021 | 45 | 2021 |
| 606-nm InGaN amber micro-light-emitting diodes with an on-wafer external quantum efficiency of 0.56% Z Zhuang, D Iida, M Velazquez-Rizo, K Ohkawa IEEE Electron Device Letters 42 (7), 1029-1032, 2021 | 45 | 2021 |
| Metalorganic vapor-phase epitaxial growth simulation to realize high-quality and high-In-content InGaN alloys K Ohkawa, F Ichinohe, T Watanabe, K Nakamura, D Iida Journal of Crystal Growth 512, 69-73, 2019 | 44 | 2019 |
| One‐step lateral growth for reduction in defect density of a ‐plane GaN on r ‐sapphire substrate and its application in light emitters D Iida, A Miura, Y Okadome, Y Tsuchiya, T Kawashima, T Nagai, M Iwaya, ... physica status solidi (a) 204 (6), 2005-2009, 2007 | 43 | 2007 |
| Reduction in defect density over whole area of (1 ̄1 00) m‐plane GaN using one‐sidewall seeded epitaxial lateral overgrowth T Kawashima, T Nagai, D Iida, A Miura, Y Okadome, Y Tsuchiya, M Iwaya, ... physica status solidi (b) 244 (6), 1848-1852, 2007 | 41 | 2007 |
Kazuhiro OhkawaProfessor, King Abdullah University of Science and TechnologyΗ διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα kaust.edu.sa
