| Power electronics on InAlN/(In) GaN: Prospect for a record performance J Kuzmik IEEE Electron Device Letters 22 (11), 510-512, 2001 | 774 | 2001 |
| Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method J Kuzmik, R Javorka, A Alam, M Marso, M Heuken, P Kordos IEEE transactions on electron devices 49 (8), 1496-1498, 2002 | 263 | 2002 |
| InAlN/(In) GaN high electron mobility transistors: some aspects of the quantum well heterostructure proposal J Kuzmik Semiconductor Science and Technology 17 (6), 540, 2002 | 184 | 2002 |
| InAlN/GaN HEMTs: A first insight into technological optimization J Kuzmik, A Kostopoulos, G Konstantinidis, JF Carlin, A Georgakilas, ... IEEE transactions on electron devices 53 (3), 422-426, 2006 | 177 | 2006 |
| A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors M Ťapajna, J Kuzmík Applied Physics Letters 100 (11), 2012 | 168 | 2012 |
| Gate reliability investigation in normally-off p-type-GaN cap/AlGaN/GaN HEMTs under forward bias stress M Ťapajna, O Hilt, E Bahat-Treidel, J Würfl, J Kuzmik IEEE Electron Device Letters 37 (4), 385-388, 2016 | 163 | 2016 |
| State of the art on gate insulation and surface passivation for GaN-based power HEMTs T Hashizume, K Nishiguchi, S Kaneki, J Kuzmik, Z Yatabe Materials science in semiconductor processing 78, 85-95, 2018 | 160 | 2018 |
| Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors J Kuzmik, G Pozzovivo, C Ostermaier, G Strasser, D Pogany, E Gornik, ... Journal of Applied Physics 106 (12), 2009 | 142 | 2009 |
| Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using Zr $\hbox {O} _ {\bm 2} $ or Hf $\hbox {O} _ {\bm 2} $ J Kuzmik, G Pozzovivo, S Abermann, JF Carlin, M Gonschorek, E Feltin, ... IEEE Transactions on Electron Devices 55 (3), 937-941, 2008 | 120 | 2008 |
| Transient thermal characterization of AlGaN/GaN HEMTs grown on silicon J Kuzmík, S Bychikhin, M Neuburger, A Dadgar, A Krost, E Kohn, ... IEEE Transactions on Electron Devices 52 (8), 1698-1705, 2005 | 119 | 2005 |
| MOCVD of HfO2 and ZrO2 high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs S Abermann, G Pozzovivo, J Kuzmik, G Strasser, D Pogany, JF Carlin, ... Semiconductor Science and Technology 22 (12), 1272, 2007 | 106 | 2007 |
| Gate insulation and drain current saturation mechanism in InAlN∕ GaN metal-oxide-semiconductor high-electron-mobility transistors G Pozzovivo, J Kuzmik, S Golka, W Schrenk, G Strasser, D Pogany, ... Applied Physics Letters 91 (4), 2007 | 96 | 2007 |
| Investigation of the thermal boundary resistance at the III-nitride/substrate interface using optical methods J Kuzmik, S Bychikhin, D Pogany, C Gaquière, E Pichonat, E Morvan Journal of Applied Physics 101 (5), 2007 | 89 | 2007 |
| Ultrathin InAlN/AlN barrier HEMT with high performance in normally off operation C Ostermaier, G Pozzovivo, JFÇ Carlin, B Basnar, W Schrenk, Y Douvry, ... IEEE Electron Device Letters 30 (10), 1030-1032, 2009 | 85 | 2009 |
| Gate‐lag and drain‐lag effects in (GaN)/InAlN/GaN and InAlN/AlN/GaN HEMTs J Kuzmik, JF Carlin, M Gonschorek, A Kostopoulos, G Konstantinidis, ... physica status solidi (a) 204 (6), 2019-2022, 2007 | 72 | 2007 |
| Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors M Ťapajna, M Jurkovič, L Válik, Š Haščík, D Gregušová, F Brunner, ... Applied Physics Letters 102 (24), 2013 | 70 | 2013 |
| Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors M Ťapajna, O Hilt, E Bahat-Treidel, J Würfl, J Kuzmík Applied Physics Letters 107 (19), 2015 | 66 | 2015 |
| Temperature dependence of GaN Schottky diodes I–V characteristics J Osvald, J Kuzmik, G Konstantinidis, P Lobotka, A Georgakilas Microelectronic Engineering 81 (2-4), 181-187, 2005 | 64 | 2005 |
| Self-heating in GaN transistors designed for high-power operation J Kuzmik, M Ťapajna, L Valik, M Molnar, D Donoval, C Fleury, D Pogany, ... IEEE Transactions on Electron Devices 61 (10), 3429-3434, 2014 | 58 | 2014 |
| Impact of GaN cap on charges in Al2O3/(GaN/) AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations M Ťapajna, M Jurkovič, L Válik, Š Haščík, D Gregušová, F Brunner, ... Journal of Applied Physics 116 (10), 2014 | 54 | 2014 |
