Παρακολούθηση
Jonathan J. Wierer, Jr.
Jonathan J. Wierer, Jr.
North Carolina State University, Department of Electrical and Computer Engineering
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα ncsu.edu - Αρχική σελίδα
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Παρατίθεται από
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High-power AlGaInN flip-chip light-emitting diodes
JJ Wierer, DA Steigerwald, MR Krames, JJ O’shea, MJ Ludowise, ...
Applied Physics Letters 78 (22), 3379-3381, 2001
8772001
III-nitride photonic-crystal light-emitting diodes with high extraction efficiency
JJ Wierer Jr, A David, MM Megens
Nature Photonics 3 (3), 163-169, 2009
8452009
Comparison between blue lasers and light-emitting diodes for future solid-state lighting
JJ Wierer Jr., JY Tsao, DS Sizov
Lasers and Photonics Reviews 7 (6), 963–993, 2013
6142013
InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures
JJ Wierer, MR Krames, JE Epler, NF Gardner, MG Craford, JR Wendt, ...
Applied Physics Letters 84 (19), 3885-3887, 2004
5042004
Toward smart and ultra‐efficient solid‐state lighting
JY Tsao, MH Crawford, ME Coltrin, AJ Fischer, DD Koleske, ...
Advanced Optical Materials 2 (9), 809-836, 2014
4132014
High power LEDs–Technology status and market applications
FM Steranka, J Bhat, D Collins, L Cook, MG Craford, R Fletcher, ...
physica status solidi (a) 194 (2), 380-388, 2002
3272002
Highly reflective ohmic contacts to III-nitride flip-chip LEDs
DA Steigerwald, SD Lester, JJ Wierer Jr
US Patent 6,573,537, 2003
2912003
Four-color laser white illuminant demonstrating high color-rendering quality
A Neumann, JJ Wierer, W Davis, Y Ohno, SRJ Brueck, JY Tsao
Optics express 19 (104), A982-A990, 2011
2852011
Polarization anisotropy in the electroluminescence of m-plane InGaN–GaN multiple-quantum-well light-emitting diodes
NF Gardner, JC Kim, JJ Wierer, YC Shen, MR Krames
Applied Physics Letters 86 (11), 2005
2832005
Photonic crystal light emitting device
JJ Wierer, MR Krames, JE Epler
US Patent 7,675,084, 2010
262*2010
High‐efficiency, microscale GaN light‐emitting diodes and their thermal properties on unusual substrates
T Kim, YH Jung, J Song, D Kim, Y Li, H Kim, IS Song, JJ Wierer, HA Pao, ...
small 8 (11), 1643-1649, 2012
2472012
III-nitride light-emitting device with increased light generating capability
MR Krames, DA Steigerwald, FA Kish Jr, P Rajkomar, JJ Wierer Jr, ...
US Patent 6,486,499, 2002
2152002
Photonic crystal light emitting device
JJ Wierer Jr, MR Krames, MM Sigalas
US Patent 7,012,279, 2006
2102006
Semiconductor light emitting devices
NF Gardner, JJ Wierer Jr, GO Mueller, MR Krames
US Patent 6,847,057, 2005
2002005
LED efficiency using photonic crystal structure
JJW M. R. Krames, M. M. Sigalas
US Patent App. 2003 0/141,507, 2003
199*2003
LED including photonic crystal structure
US Patent 7,279,718, 0
199*
Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes
YC Shen, JJ Wierer, MR Krames, MJ Ludowise, MS Misra, F Ahmed, ...
Applied Physics Letters 82 (14), 2221-2223, 2003
1922003
Performance of high‐power AlInGaN light emitting diodes
AY Kim, W Götz, DA Steigerwald, JJ Wierer, NF Gardner, J Sun, ...
physica status solidi (a) 188 (1), 15-21, 2001
1692001
III-Nitride Light-emitting device with increased light generating capability (US 6,521,914)
MR Krames, DA Steigerwald, FA Kish Jr, P Rajkomar, JJ Wierer Jr, ...
US Patent 6,521,914, 2003
1592003
Method of making a III-nitride light-emitting device with increased light generating capability
JJ Wierer Jr, MR Krames, DA Steigerwald, FA Kish Jr, P Rajkomar
US Patent 6,514,782, 2003
1502003
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