| Integrated circuit having multiple threshold voltages B Lee, JP Liu, M Joshi, M Eller, R Pal, RJ Carter, SB Samavedam US Patent 9,362,180, 2016 | 398 | 2016 |
| An integrated microfluidic device for influenza and other genetic analyses R Pal, M Yang, R Lin, BN Johnson, N Srivastava, SZ Razzacki, ... Lab on a Chip 5 (10), 1024-1032, 2005 | 302 | 2005 |
| Phase change microvalve for integrated devices R Pal, M Yang, BN Johnson, DT Burke, MA Burns Analytical chemistry 76 (13), 3740-3748, 2004 | 197 | 2004 |
| Microfabricated reaction and separation systems M Krishnan, V Namasivayam, R Lin, R Pal, MA Burns Current Opinion in Biotechnology 12 (1), 92-98, 2001 | 146 | 2001 |
| Metal oxide semiconductor devices having implanted carbon diffusion retardation layers and methods for fabricating the same FB Yang, MJ Hargrove, R Pal US Patent App. 12/176,916, 2010 | 137 | 2010 |
| Stress enhanced MOS transistor and methods for its fabrication R Pal, I Peidous, D Brown US Patent 7,534,689, 2009 | 136 | 2009 |
| High performance 45-nm SOI technology with enhanced strain, porous low-k BEOL, and immersion lithography P Agnello, T Ivers, C Warm, R Wise, R Wachnik, D Schepis, S Sankaran, ... 2006 International Electron Devices Meeting, 1-4, 2006 | 132 | 2006 |
| A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications S Krishnan, U Kwon, N Moumen, MW Stoker, ECT Harley, S Bedell, ... 2011 International Electron Devices Meeting, 28.1. 1-28.1. 4, 2011 | 129 | 2011 |
| Thermal micro-valves for micro-integrated devices MA Burns, R Pal US Patent 7,195,036, 2007 | 116 | 2007 |
| Insights into the structure activity relationship of nitrogen-containing heterocyclics for the development of antidepressant compounds: An updated review K Singh, R Pal, SA Khan, B Kumar, MJ Akhtar Journal of Molecular Structure 1237, 130369, 2021 | 93 | 2021 |
| A 7nm CMOS technology platform for mobile and high performance compute application S Narasimha, B Jagannathan, A Ogino, D Jaeger, B Greene, C Sheraw, ... 2017 IEEE International Electron Devices Meeting (IEDM), 29.5. 1-29.5. 4, 2017 | 73 | 2017 |
| High performance 32nm SOI CMOS with high-k/metal gate and 0.149µm2 SRAM and ultra low-k back end with eleven levels of copper B Greene, Q Liang, K Amarnath, Y Wang, J Schaeffer, M Cai, Y Liang, ... 2009 Symposium on VLSI Technology, 140-141, 2009 | 65 | 2009 |
| Voltage gated sodium channel inhibitors as anticonvulsant drugs: A systematic review on recent developments and structure activity relationship studies R Pal, B Kumar, MJ Akhtar, PA Chawla Bioorganic Chemistry 115, 105230, 2021 | 54 | 2021 |
| Cost-effective thermal isolation techniques for use on microfabricated DNA amplification and analysis devices M Yang, R Pal, MA Burns Journal of Micromechanics and Microengineering 15 (1), 221, 2004 | 40 | 2004 |
| Methods for fabricating MOS devices having highly stressed channels FB Yang, R Pal, MJ Hargrove US Patent 8,076,209, 2011 | 35 | 2011 |
| High-performance nMOSFET with in-situ phosphorus-doped embedded Si: C (ISPD eSi: C) source-drain stressor BF Yang, R Takalkar, Z Ren, L Black, A Dube, JW Weijtmans, J Li, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 35 | 2008 |
| Methods for protecting gate stacks during fabrication of semiconductor devices and semiconductor devices fabricated from such methods R Pal, M Hargrove, FB Yang US Patent 7,932,143, 2011 | 32 | 2011 |
| Microstencils for the patterning of nontraditional materials R Pal, KE Sung, MA Burns Langmuir 22 (12), 5392-5397, 2006 | 32 | 2006 |
| Reactive metabolites of the anticonvulsant drugs and approaches to minimize the adverse drug reaction R Pal, K Singh, SA Khan, P Chawla, B Kumar, MJ Akhtar European Journal of Medicinal Chemistry 226, 113890, 2021 | 31 | 2021 |
| Designing strategies, structural activity relationship and biological activity of recently developed nitrogen containing heterocyclic compounds as epidermal growth factor … R Pal, G Teli, GSP Matada, PS Dhiwar Journal of Molecular Structure 1291, 136021, 2023 | 30 | 2023 |
