Παρακολούθηση
Wei Liu
Wei Liu
Berkeley lab, Accelerator Technology and Applied Physics Division
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα lbl.gov - Αρχική σελίδα
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Παρατίθεται από
Παρατίθεται από
Έτος
GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells
C Haller, JF Carlin, G Jacopin, W Liu, D Martin, R Butté, N Grandjean
Applied Physics Letters 113 (11), 111106, 2018
1262018
Exciton dynamics at a single dislocation in GaN probed by picosecond time-resolved cathodoluminescence
W Liu, JF Carlin, N Grandjean, B Deveaud, G Jacopin
Applied Physics Letters 109 (4), 042101, 2016
602016
All-silicon quantum light source by embedding an atomic emissive center in a nanophotonic cavity
W Redjem, Y Zhiyenbayev, W Qarony, V Ivanov, C Papapanos, W Liu, ...
Nature Communications 14 (1), 3321, 2023
572023
Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in -plane InGaN/GaN quantum wells
W Liu, R Butté, A Dussaigne, N Grandjean, B Deveaud, G Jacopin
Physical Review B 94 (19), 195411, 2016
572016
Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells
M Shahmohammadi, W Liu, G Rossbach, L Lahourcade, A Dussaigne, ...
Physical Review B 95 (12), 125314, 2017
542017
Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence
TFK Weatherley, W Liu, V Osokin, DTL Alexander, RA Taylor, JF Carlin, ...
Nano Letters 21 (12), 5217-5224, 2021
412021
Efficiency droop improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum wells
LH Zhu, W Liu, FM Zeng, YL Gao, BL Liu, YJ Lu, Z Chen
IEEE Photonics Journal 5 (2), 8200208-8200208, 2013
312013
Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime
W Liu, C Haller, Y Chen, T Weatherley, JF Carlin, G Jacopin, R Butté, ...
Applied Physics Letters 116 (22), 222106, 2020
282020
Effect of localization on photoluminescence and zero-field splitting of silicon color centers
V Ivanov, J Simoni, Y Lee, W Liu, K Jhuria, W Redjem, Y Zhiyenbayev, ...
Physical Review B 106 (13), 134107, 2022
272022
GaN buffer growth temperature and efficiency of InGaN/GaN quantum wells: The critical role of nitrogen vacancies at the GaN surface
Y Chen, C Haller, W Liu, SY Karpov, JF Carlin, N Grandjean
Applied Physics Letters 118 (11), 111102, 2021
242021
Spatially dependent carrier dynamics in single InGaN/GaN core-shell microrod by time-resolved cathodoluminescence
W Liu, C Mounir, G Rossbach, T Schimpke, A Avramescu, HJ Lugauer, ...
Applied Physics Letters 112 (5), 052106, 2018
242018
Scalable manufacturing of quantum light emitters in silicon under rapid thermal annealing
Y Zhiyenbayev, W Redjem, V Ivanov, W Qarony, C Papapanos, J Simoni, ...
Optics Express 31 (5), 8352-8362, 2023
212023
Quantum Emitter Formation Dynamics and Probing of Radiation-Induced Atomic Disorder in Silicon
W Liu, V Ivanov, K Jhuria, Q Ji, A Persaud, W Redjem, J Simoni, ...
Physical Review Applied 20, 014058, 2023
132023
Programmable quantum emitter formation in silicon
K Jhuria, V Ivanov, D Polley, Y Zhiyenbayev, W Liu, A Persaud, W Redjem, ...
Nature Communications 15 (1), 4497, 2024
102024
Carrier localization and phonon-assisted hopping effects in semipolar InGaN/GaN light-emitting dioses grown by selective area epitaxy
F Zeng, L Zhu, W Liu, X Li, W Liu, BJ Chen, YC Lee, ZC Feng, B Liu
Journal of Alloys and Compounds 656, 881-886, 2016
102016
Influence of GaN barrier thickness on optical properties of in-graded InGaN/GaN multiple quantum wells
W Liu, LH Zhu, FM Zeng, L Zhang, WC Liu, XY Li, BL Liu, ZC Feng
Applied Physics Express 6 (8), 081001, 2013
102013
Exploration of Defect Dynamics and Color Center Qubit Synthesis with Pulsed Ion Beams
T Schenkel, W Redjem, A Persaud, W Liu, PA Seidl, AJ Amsellem, ...
Quantum Beam Science 6 (1), 13, 2022
92022
Impact of alloy disorder on Auger recombination in single InGaN/GaN core-shell microrods
W Liu, G Rossbach, A Avramescu, T Schimpke, HJ Lugauer, M Strassburg, ...
Physical Review B 100 (23), 235301, 2019
82019
Improved Quantum Efficiency in Semipolar InGaN/GaN Quantum Wells Grown on GaN Prepared by Lateral Epitaxial Overgrowth
L Zhu, F Zeng, W Liu, Z Feng, B Liu, Y Lu, Y Gao, Z Chen
IEEE transactions on electron devices 60 (11), 3753-3759, 2013
72013
Combining femtosecond laser annealing and shallow ion implantation for local color center creation in diamond
J Engel, K Jhuria, D Polley, T Lühmann, M Kuhrke, W Liu, J Bokor, ...
Applied Physics Letters 122 (23), 2023
52023
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