Παρακολούθηση
Xiongliang Wei
Xiongliang Wei
R&D Engineer, Hisense photonics
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα hisensebroadband.com
Τίτλος
Παρατίθεται από
Παρατίθεται από
Έτος
Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers
SA Al Muyeed, W Sun, X Wei, R Song, DD Koleske, N Tansu, JJ Wierer
Aip Advances 7 (10), 2017
412017
Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers
SA Al Muyeed, W Sun, MR Peart, RM Lentz, X Wei, D Borovac, R Song, ...
Journal of Applied Physics 126 (21), 2019
232019
Thermal oxidation of AlInN for III-nitride electronic and optoelectronic devices
MR Peart, X Wei, D Borovac, W Sun, N Tansu, JJ Wierer Jr
ACS Applied Electronic Materials 1 (8), 1367-1371, 2019
162019
Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching
X Wei, SA Al Muyeed, MR Peart, W Sun, N Tansu, JJ Wierer
Applied Physics Letters 113 (12), 2018
112018
Near-infrared electroluminescence of AlGaN capped InGaN quantum dots formed by controlled growth on photoelectrochemical etched quantum dot templates
X Wei, SA Al Muyeed, H Xue, E Palmese, R Song, N Tansu, JJ Wierer Jr
Photonics Research 10 (1), 33-40, 2021
42021
Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates
SA Al Muyeed, X Wei, D Borovac, R Song, N Tansu, JJ Wierer Jr
Journal of Crystal Growth 540, 125652, 2020
32020
Recombination Rates of InxGa1−xN/AlyGa1−yN/GaN Multiple Quantum Wells Emitting From 640 to 565 nm
SA Al Muyeed, D Borovac, H Xue, X Wei, R Song, N Tansu, JJ Wierer
IEEE Journal of Quantum Electronics 57 (6), 1-7, 2021
22021
Anisotropic Etching of InGaN Thin Films with Photoelectrochemical Etching to Form Quantum Dots
X Wei, SA Al Muyeed, H Xue, JJ Wierer Jr
Materials 16 (5), 1890, 2023
2023
Self-assembled growth of size-controlled InGaN quantum dots for LEDs
JJ Wierer, SA Al Muyeed, X Wei, D Borovac, H Xue, R Song, N Tansu
Light-Emitting Devices, Materials, and Applications XXV 11706, 1170606, 2021
2021
Controlled Synthesis of InGaN Quantum Dots for Efficient Light Emitters
X Wei, SA Al Muyeed, M Peart, N Tansu, JJ Wierer
2018 IEEE Photonics Conference (IPC), 1-2, 2018
2018
Improvement in the Radiative Efficiency of InGaN-Based Multiple Quantum Wells using AlGaN Interlayers
SA Al Muyeed, W Sun, X Wei, R Song, D Koleske, N Tansu, JJ Wierer
2018 IEEE Photonics Conference (IPC), 1-2, 2018
2018
Δεν είναι δυνατή η εκτέλεση της ενέργειας από το σύστημα αυτή τη στιγμή. Προσπαθήστε ξανά αργότερα.
Άρθρα 1–11