| Method for fabricating singe crystal materials over CMOS devices FJ Kub, KD Hobart US Patent 6,242,324, 2001 | 451 | 2001 |
| Advanced methods for making semiconductor devices by low temperature direct bonding FJ Kub, V Temple, K Hobart, J Neilson US Patent 6,153,495, 2000 | 451 | 2000 |
| Diamond on III-nitride device FJ Kub, TJ Anderson, VD Wheeler, AD Koehler, KD Hobart US Patent 10,002,958, 2018 | 398 | 2018 |
| Method of producing a thin silicon-on-insulator layer DJ Godbey, HL Hughes, FJ Kub US Patent 5,013,681, 1991 | 288 | 1991 |
| Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting FJ Kub, KD Hobart US Patent 6,767,749, 2004 | 269 | 2004 |
| Fabrication ultra-thin bonded semiconductor layers FJ Kub, KD Hobart US Patent 6,323,108, 2001 | 256 | 2001 |
| Film on Graphene on a Substrate and Method and Devices Therefor F Kub, T Anderson, M Mastro US Patent App. 13/310,347, 2012 | 191 | 2012 |
| Single-crystal material on non-single-crystalline substrate FJ Kub, KD Hobart US Patent 6,328,796, 2001 | 189 | 2001 |
| Wafer bonding of thinned electronic materials and circuits to high performance substrates FJ Kub, KD Hobart US Patent 7,535,100, 2009 | 181 | 2009 |
| Method of manufacturing a semiconductor device having a thin GaN material directly bonded to an optimized substrate F Kub, K Hobart US Patent App. 09/964,546, 2003 | 157 | 2003 |
| Programmable analog vector-matrix multipliers FJ Kub, KK Moon, IA Mack, FM Long IEEE Journal of Solid-State Circuits 25 (1), 207-214, 1990 | 147 | 1990 |
| Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN BN Feigelson, TJ Anderson, M Abraham, JA Freitas, JK Hite, CR Eddy, ... Journal of crystal growth 350 (1), 21-26, 2012 | 138 | 2012 |
| Electronic device with composite substrate FJ Kub, KD Hobart US Patent 6,497,763, 2002 | 129 | 2002 |
| Compliant substrates: a comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides KD Hobart, FJ Kub, M Fatemi, ME Twigg, PE Thompson, TS Kuan, ... Journal of Electronic Materials 29, 897-900, 2000 | 117 | 2000 |
| Activation of Mg implanted in GaN by multicycle rapid thermal annealing TJ Anderson, BN Feigelson, FJ Kub, MJ Tadjer, KD Hobart, MA Mastro, ... Electronics Letters 50 (3), 197-198, 2014 | 115 | 2014 |
| Strain relaxation of SiGe islands on compliant oxide H Yin, R Huang, KD Hobart, Z Suo, TS Kuan, CK Inoki, SR Shieh, ... Journal of Applied Physics 91 (12), 9716-9722, 2002 | 106 | 2002 |
| Gate after diamond transistor F Kub, K Hobart US Patent 8,039,301, 2011 | 98 | 2011 |
| III-nitride P-channel field effect transistor with hole carriers in the channel FJ Kub, TJ Anderson, AD Koehler, KD Hobart US Patent 9,006,791, 2015 | 96 | 2015 |
| Graphene on semiconductor detector FJ Kub, T Anderson, KD Hobart US Patent 8,872,159, 2014 | 96 | 2014 |
| Substrate-dependent effects on the response of AlGaN/GaN HEMTs to 2-MeV proton irradiation TJ Anderson, AD Koehler, JD Greenlee, BD Weaver, MA Mastro, JK Hite, ... IEEE Electron Device Letters 35 (8), 826-828, 2014 | 96 | 2014 |
