Demonstration of GaN-based solar cells with GaN/InGaN superlattice absorption layers JK Sheu, CC Yang, SJ Tu, KH Chang, ML Lee, WC Lai, LC Peng
IEEE Electron Device Letters 30 (3), 225-227, 2009
111 2009 GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts SJ Chang, ML Lee, JK Sheu, WC Lai, YK Su, CS Chang, CJ Kao, GC Chi, ...
IEEE Electron Device Letters 24 (4), 212-214, 2003
102 2003 Nonalloyed Cr∕ Au-based Ohmic contacts to n-GaN ML Lee, JK Sheu, CC Hu
Applied Physics Letters 91 (18), 2007
96 2007 Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer ML Lee, JK Sheu, WC Lai, YK Su, SJ Chang, CJ Kao, CJ Tun, MG Chen, ...
Journal of applied physics 94 (3), 1753-1757, 2003
60 2003 GaN Schottky barrier photodetectors with a low-temperature GaN cap layer ML Lee, JK Sheu, WC Lai, SJ Chang, YK Su, MG Chen, CJ Kao, GC Chi, ...
Applied physics letters 82 (17), 2913-2915, 2003
59 2003 Enhancement in output power of blue gallium nitride-based light-emitting diodes with omnidirectional metal reflector under electrode pads JK Sheu, I Hung, WC Lai, SC Shei, ML Lee
Applied Physics Letters 93 (10), 2008
55 2008 InGaN light-emitting diodes with naturally formed truncated micropyramids on top surface JK Sheu, CM Tsai, ML Lee, SC Shei, WC Lai
Applied physics letters 88 (11), 2006
55 2006 Enhancement of the conversion efficiency of GaN-based photovoltaic devices with AlGaN/InGaN absorption layers CC Yang, JK Sheu, XW Liang, MS Huang, ML Lee, KH Chang, SJ Tu, ...
Applied Physics Letters 97 (2), 2010
49 2010 Ga-doped ZnO transparent conductive oxide films applied to GaN-based light-emitting diodes for improving light extraction efficiency JK Sheu, ML Lee, YS Lu, KW Shu
IEEE Journal of Quantum Electronics 44 (12), 1211-1218, 2008
49 2008 Design of Hole-Blocking and Electron-Blocking Layers in Alx Ga1–x N-Based UV Light-Emitting Diodes YH Shih, JY Chang, JK Sheu, YK Kuo, FM Chen, ML Lee, WC Lai
IEEE Transactions on Electron Devices 63 (3), 1141-1147, 2016
48 2016 Emission mechanism of mixed-color InGaN/GaN multi-quantum-well light-emitting diodes SC Shei, JK Sheu, CM Tsai, WC Lai, ML Lee, CH Kuo
Japanese journal of applied physics 45 (4R), 2463, 2006
48 2006 Planar GaN photodetectors formed by Si implantation into p -GaN JK Sheu, ML Lee, LS Yeh, CJ Kao, CJ Tun, MG Chen, GC Chi, SJ Chang, ...
Applied physics letters 81 (22), 4263-4265, 2002
47 2002 High-performance GaN metal–insulator–semiconductor ultraviolet photodetectors using gallium oxide as gate layer ML Lee, TS Mue, FW Huang, JH Yang, JK Sheu
Optics Express 19 (13), 12658-12663, 2011
46 2011 Light emitting diode and data transmission and reception apparatus ML Lee
US Patent 9,905,725, 2018
45 2018 Ultraviolet band-pass Schottky barrier photodetectors formed by Al-doped ZnO contacts to n-GaN JK Sheu, ML Lee, CJ Tun, SW Lin
Applied physics letters 88 (4), 2006
43 2006 Reduction of dark current in AlGaN-GaN Schottky-barrier photodetectors with a low-temperature-grown GaN cap layer ML Lee, JK Sheu, YK Su, SJ Chang, WC Lai, GC Chi
IEEE electron device letters 25 (9), 593-595, 2004
42 2004 Characterization of Si implants in p-type GaN JK Sheu, ML Lee, CJ Tun, CJ Kao, LS Yeh, SJ Chang, GC Chi
IEEE Journal of selected topics in quantum electronics 8 (4), 767-772, 2002
42 2002 InGaN-based epitaxial films as photoelectrodes for hydrogen generation through water photoelectrolysis and CO2 reduction to formic acid JK Sheu, PH Liao, TC Huang, KJ Chiang, WC Lai, ML Lee
Solar Energy Materials and Solar Cells 166, 86-90, 2017
41 2017 High-Responsivity Solar-Blind Photodetectors Formed by Ga2 O3 /p-GaN Bipolar Heterojunctions PF Chi, FW Lin, ML Lee, JK Sheu
Acs Photonics 9 (3), 1002-1007, 2022
36 2022 Improved performance of GaN-based blue LEDs with the InGaN insertion layer between the MQW active layer and the n-GaN cladding layer CH Jang, JK Sheu, CM Tsai, SJ Chang, WC Lai, ML Lee, TK Ko, CF Shen, ...
IEEE Journal of Quantum Electronics 46 (4), 513-517, 2010
36 2010