Παρακολούθηση
Ming-Lun Lee
Ming-Lun Lee
Southern taiwan university of science and technology
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα stust.edu.tw
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Παρατίθεται από
Παρατίθεται από
Έτος
Demonstration of GaN-based solar cells with GaN/InGaN superlattice absorption layers
JK Sheu, CC Yang, SJ Tu, KH Chang, ML Lee, WC Lai, LC Peng
IEEE Electron Device Letters 30 (3), 225-227, 2009
1112009
GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts
SJ Chang, ML Lee, JK Sheu, WC Lai, YK Su, CS Chang, CJ Kao, GC Chi, ...
IEEE Electron Device Letters 24 (4), 212-214, 2003
1022003
Nonalloyed Cr∕ Au-based Ohmic contacts to n-GaN
ML Lee, JK Sheu, CC Hu
Applied Physics Letters 91 (18), 2007
962007
Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
ML Lee, JK Sheu, WC Lai, YK Su, SJ Chang, CJ Kao, CJ Tun, MG Chen, ...
Journal of applied physics 94 (3), 1753-1757, 2003
602003
GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
ML Lee, JK Sheu, WC Lai, SJ Chang, YK Su, MG Chen, CJ Kao, GC Chi, ...
Applied physics letters 82 (17), 2913-2915, 2003
592003
Enhancement in output power of blue gallium nitride-based light-emitting diodes with omnidirectional metal reflector under electrode pads
JK Sheu, I Hung, WC Lai, SC Shei, ML Lee
Applied Physics Letters 93 (10), 2008
552008
InGaN light-emitting diodes with naturally formed truncated micropyramids on top surface
JK Sheu, CM Tsai, ML Lee, SC Shei, WC Lai
Applied physics letters 88 (11), 2006
552006
Enhancement of the conversion efficiency of GaN-based photovoltaic devices with AlGaN/InGaN absorption layers
CC Yang, JK Sheu, XW Liang, MS Huang, ML Lee, KH Chang, SJ Tu, ...
Applied Physics Letters 97 (2), 2010
492010
Ga-doped ZnO transparent conductive oxide films applied to GaN-based light-emitting diodes for improving light extraction efficiency
JK Sheu, ML Lee, YS Lu, KW Shu
IEEE Journal of Quantum Electronics 44 (12), 1211-1218, 2008
492008
Design of Hole-Blocking and Electron-Blocking Layers in AlxGa1–xN-Based UV Light-Emitting Diodes
YH Shih, JY Chang, JK Sheu, YK Kuo, FM Chen, ML Lee, WC Lai
IEEE Transactions on Electron Devices 63 (3), 1141-1147, 2016
482016
Emission mechanism of mixed-color InGaN/GaN multi-quantum-well light-emitting diodes
SC Shei, JK Sheu, CM Tsai, WC Lai, ML Lee, CH Kuo
Japanese journal of applied physics 45 (4R), 2463, 2006
482006
Planar GaN photodetectors formed by Si implantation into p-GaN
JK Sheu, ML Lee, LS Yeh, CJ Kao, CJ Tun, MG Chen, GC Chi, SJ Chang, ...
Applied physics letters 81 (22), 4263-4265, 2002
472002
High-performance GaN metal–insulator–semiconductor ultraviolet photodetectors using gallium oxide as gate layer
ML Lee, TS Mue, FW Huang, JH Yang, JK Sheu
Optics Express 19 (13), 12658-12663, 2011
462011
Light emitting diode and data transmission and reception apparatus
ML Lee
US Patent 9,905,725, 2018
452018
Ultraviolet band-pass Schottky barrier photodetectors formed by Al-doped ZnO contacts to n-GaN
JK Sheu, ML Lee, CJ Tun, SW Lin
Applied physics letters 88 (4), 2006
432006
Reduction of dark current in AlGaN-GaN Schottky-barrier photodetectors with a low-temperature-grown GaN cap layer
ML Lee, JK Sheu, YK Su, SJ Chang, WC Lai, GC Chi
IEEE electron device letters 25 (9), 593-595, 2004
422004
Characterization of Si implants in p-type GaN
JK Sheu, ML Lee, CJ Tun, CJ Kao, LS Yeh, SJ Chang, GC Chi
IEEE Journal of selected topics in quantum electronics 8 (4), 767-772, 2002
422002
InGaN-based epitaxial films as photoelectrodes for hydrogen generation through water photoelectrolysis and CO2 reduction to formic acid
JK Sheu, PH Liao, TC Huang, KJ Chiang, WC Lai, ML Lee
Solar Energy Materials and Solar Cells 166, 86-90, 2017
412017
High-Responsivity Solar-Blind Photodetectors Formed by Ga2O3/p-GaN Bipolar Heterojunctions
PF Chi, FW Lin, ML Lee, JK Sheu
Acs Photonics 9 (3), 1002-1007, 2022
362022
Improved performance of GaN-based blue LEDs with the InGaN insertion layer between the MQW active layer and the n-GaN cladding layer
CH Jang, JK Sheu, CM Tsai, SJ Chang, WC Lai, ML Lee, TK Ko, CF Shen, ...
IEEE Journal of Quantum Electronics 46 (4), 513-517, 2010
362010
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