Άρθρα με εντολές δημόσιας πρόσβασης - Ferdinando IucolanoΜάθετε περισσότερα
Δεν είναι διαθέσιμο πουθενά: 15
Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride
F Roccaforte, F Giannazzo, A Alberti, M Spera, M Cannas, I Cora, B Pécz, ...
Materials Science in Semiconductor Processing 94, 164-170, 2019
Εντολές: Government of Italy
Conduction mechanisms at interface of AlN/SiN dielectric stacks with AlGaN/GaN heterostructures for normally-off high electron mobility transistors: Correlating device behavior …
G Greco, P Fiorenza, F Iucolano, A Severino, F Giannazzo, F Roccaforte
ACS applied materials & interfaces 9 (40), 35383-35390, 2017
Εντολές: Government of Italy
Ti/Al ohmic contacts on AlGaN/GaN heterostructures with different defect density
G Greco, F Iucolano, C Bongiorno, F Giannazzo, M Krysko, M Leszczynski, ...
Applied surface science 314, 546-551, 2014
Εντολές: Government of Italy
Investigation of nBTI degradation on GaN-on-Si E-mode MOSc-HEMT
AG Viey, W Vandendaele, MA Jaud, J Cluzel, JP Barnes, S Martin, ...
2019 IEEE International Electron Devices Meeting (IEDM), 4.3. 1-4.3. 4, 2019
Εντολές: Agence Nationale de la Recherche
Carbon-related pBTI degradation mechanisms in GaN-on-Si E-mode MOSc-HEMT
AG Viey, W Vandendaele, MA Jaud, L Gerrer, X Garros, J Cluzel, S Martin, ...
2020 IEEE International Electron Devices Meeting (IEDM), 23.6. 1-23.6. 4, 2020
Εντολές: Agence Nationale de la Recherche
Influence of carbon on pBTI degradation in GaN-on-Si E-mode MOSc-HEMT
AG Viey, W Vandendaele, MA Jaud, L Gerrer, X Garros, J Cluzel, S Martin, ...
IEEE Transactions on Electron Devices 68 (4), 2017-2024, 2021
Εντολές: Agence Nationale de la Recherche
A novel insight on interface traps density (Dit) extraction in GaN-on-Si MOS-c HEMTs
W Vandendaele, S Martin, MA Jaud, A Krakovinsky, L Vauche, ...
2020 IEEE International Electron Devices Meeting (IEDM), 23.5. 1-23.5. 4, 2020
Εντολές: Agence Nationale de la Recherche
Study on the difference between ID (VG) and C (VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT
AG Viey, W Vandendaele, MA Jaud, J Coignus, J Cluzel, A Krakovinsky, ...
2021 IEEE International Reliability Physics Symposium (IRPS), 1-8, 2021
Εντολές: Agence Nationale de la Recherche
Comprehensive TCAD analysis of threshold voltage on GaN-on-Si MOS-channel fully recessed gate HEMTs
MA Jaud, W Vandendaele, B Rrustemi, AG Viey, S Martin, C Le Royer, ...
IEEE Transactions on Electron Devices 69 (2), 669-674, 2021
Εντολές: Agence Nationale de la Recherche
Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface
B Rrustemi, AG Viey, MA Jaud, F Triozon, W Vandendaele, C Leroux, ...
ESSDERC 2021-IEEE 51st European Solid-State Device Research Conference …, 2021
Εντολές: Agence Nationale de la Recherche
In depth TCAD analysis of threshold voltage on GaN-on-Si MOS-channel fully recessed gate HEMTs
MA Jaud, W Vandendaele, B Rrustemi, AG Viey, S Martin, C Le Royer, ...
2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021
Εντολές: Agence Nationale de la Recherche
Impact of Process Variations on Back-Bias Effect in 100V p-GaN Gate AlGaN/GaN HEMTs
M Cioni, G Giorgino, A Chini, G Marletta, C Miccoli, ME Castagna, ...
2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA …, 2023
Εντολές: European Commission
Technologies for Normally‐off GaN HEMTs
G Greco, P Fiorenza, F Iucolano, F Roccaforte
Nitride Semiconductor Technology: Power Electronics and Optoelectronic …, 2020
Εντολές: Government of Italy
Impact of Gate and Drain Leakage on VTH Drift and Dynamic-RON of 100V p-GaN Gate AlGaN/GaN HEMTs
M Cioni, G Giorgino, A Chini, A Parisi, G Cappellini, L Modica, G Luongo, ...
2023 AEIT International Conference on Electrical and Electronic Technologies …, 2023
Εντολές: European Commission
Current Transport Mechanisms in Au-Free Metallizations for CMOS Compatible GaN HEMT Technology
F Roccaforte, M Spera, S Di Franco, R Lo Nigro, P Fiorenza, F Giannazzo, ...
Materials Science Forum 1004, 725-730, 2020
Εντολές: Government of Italy
Διαθέσιμο κάπου: 17
An overview of normally-off GaN-based high electron mobility transistors
F Roccaforte, G Greco, P Fiorenza, F Iucolano
Materials 12 (10), 1599, 2019
Εντολές: Government of Italy
High-performance graphene/AlGaN/GaN schottky junctions for hot electron transistors
F Giannazzo, G Greco, E Schilirò, R Lo Nigro, I Deretzis, A La Magna, ...
ACS Applied Electronic Materials 1 (11), 2342-2354, 2019
Εντολές: Agence Nationale de la Recherche, Government of Italy
Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs
G Greco, P Fiorenza, F Giannazzo, C Bongiorno, M Moschetti, C Bottari, ...
Applied Physics Letters 121 (23), 2022
Εντολές: European Commission
Normally-OFF 650V GaN-on-Si MOSc-HEMT transistor: benefits of the fully recessed gate architecture
C Le Royer, B Mohamad, J Biscarrat, L Vauche, R Escoffier, J Buckley, ...
2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022
Εντολές: Agence Nationale de la Recherche
Fabrication and characterization of graphene heterostructures with nitride semiconductors for high frequency vertical transistors
F Giannazzo, G Fisichella, G Greco, E Schilirò, I Deretzis, R Lo Nigro, ...
physica status solidi (a) 215 (10), 1700653, 2018
Εντολές: Government of Italy
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