Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy DB Jackrel, SR Bank, HB Yuen, MA Wistey, JS Harris, AJ Ptak, ...
Journal of Applied Physics 101 (11), 2007
254 2007 MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 J Guo, G Li, F Faria, Y Cao, R Wang, J Verma, X Gao, S Guo, E Beam, ...
IEEE Electron device letters 33 (4), 525-527, 2012
189 2012 Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 μA/μm at VDS = 0.5 V G Zhou, R Li, T Vasen, M Qi, S Chae, Y Lu, Q Zhang, H Zhu, JM Kuo, ...
2012 International Electron Devices Meeting, 32.6. 1-32.6. 4, 2012
182 2012 AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 R Li, Y Lu, G Zhou, Q Liu, SD Chae, T Vasen, WS Hwang, Q Zhang, P Fay, ...
IEEE electron device letters 33 (3), 363-365, 2012
166 2012 Performance of AlGaSb/InAs TFETs with gate electric field and tunneling direction aligned Y Lu, G Zhou, R Li, Q Liu, Q Zhang, T Vasen, SD Chae, T Kosel, M Wistey, ...
IEEE Electron Device Letters 33 (5), 655-657, 2012
144 2012 MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE RegrowthU Singisetti, MA Wistey, GJ Burek, AK Baraskar, BJ Thibeault, ...
IEEE Electron Device Letters 30 (11), 1128-1130, 2009
116 2009 Low-threshold continuous-wave 1.5-/spl mu/m GaInNAsSb lasers grown on GaAs SR Bank, MA Wistey, LL Goddard, HB Yuen, V Lordi, JS Harris
IEEE journal of quantum electronics 40 (6), 656-664, 2004
114 2004 Recent Progress on 1.55- SR Bank, H Bae, LL Goddard, HB Yuen, MA Wistey, R Kudrawiec, ...
IEEE Journal of Quantum Electronics 43 (9), 773-785, 2007
111 2007 The role of Sb in the MBE growth of (GaIn)(NAsSb) K Volz, V Gambin, W Ha, MA Wistey, H Yuen, S Bank, JS Harris
Journal of Crystal Growth 251 (1-4), 360-366, 2003
109 2003 InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and G Zhou, Y Lu, R Li, Q Zhang, Q Liu, T Vasen, H Zhu, JM Kuo, T Kosel, ...
IEEE Electron Device Letters 33 (6), 782-784, 2012
106 2012 GaInNAsSb for 1.3-1.6-/spl mu/m-long wavelength lasers grown by molecular beam epitaxy V Gambin, W Ha, M Wistey, H Yuen, SR Bank, SM Kim, JS Harris
IEEE Journal of selected topics in quantum electronics 8 (4), 795-800, 2002
102 2002 Ultralow resistance in situ Ohmic contacts to InGaAs/InP U Singisetti, MA Wistey, JD Zimmerman, BJ Thibeault, MJW Rodwell, ...
Applied Physics Letters 93 (18), 2008
97 2008 Long-wavelength GaInNAs (Sb) lasers on GaAs W Ha, V Gambin, S Bank, M Wistey, H Yuen, S Kim, JS Harris
IEEE journal of quantum electronics 38 (9), 1260-1267, 2002
95 2002 Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 μm W Ha, V Gambin, M Wistey, S Bank, S Kim, JS Harris
IEEE Photonics Technology Letters 14 (5), 591-593, 2002
90 2002 Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications JS Harris Jr, R Kudrawiec, HB Yuen, SR Bank, HP Bae, MA Wistey, ...
physica status solidi (b) 244 (8), 2707-2729, 2007
85 2007 Low-threshold CW GaInNAsSb/GaAs laser at 1.49 mm SR Bank, MA Wistey, HB Yuen, LL Goddard, W Ha, JS Harris Jr
Electron. Lett 39 (20), 1445-1446, 2003
81 2003 Room-temperature continuous-wave 1.55 µm GaInNAsSb laser on GaAs SR Bank, HP Bae, HB Yuen, MA Wistey, LL Goddard, JS Harris Jr
Electronics Letters 42 (3), 1, 2006
78 2006 Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs AK Baraskar, MA Wistey, V Jain, U Singisetti, G Burek, BJ Thibeault, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
75 2009 Vertical InGaAs/InP tunnel FETs with tunneling normal to the gate G Zhou, Y Lu, R Li, Q Zhang, WS Hwang, Q Liu, T Vasen, C Chen, H Zhu, ...
IEEE Electron Device Letters 32 (11), 1516-1518, 2011
72 2011 Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy F Afroz Faria, J Guo, P Zhao, G Li, P Kumar Kandaswamy, M Wistey, ...
Applied Physics Letters 101 (3), 2012
67 2012 