| Improved Synaptic Behavior Under Identical Pulses Using AlOx/HfO2 Bilayer RRAM Array for Neuromorphic Systems J Woo, K Moon, J Song, S Lee, M Kwak, J Park, H Hwang IEEE Electron Device Letters 37 (8), 994-997, 2016 | 509 | 2016 |
| HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications S Oh, T Kim, M Kwak, J Song, J Woo, S Jeon, IK Yoo, H Hwang IEEE Electron Device Letters 38 (6), 732-735, 2017 | 269 | 2017 |
| Threshold selector with high selectivity and steep slope for cross-point memory array J Song, J Woo, A Prakash, D Lee, H Hwang IEEE Electron Device Letters 36 (7), 681-683, 2015 | 175 | 2015 |
| Demonstration of Low Power 3-bit Multilevel Cell Characteristics in a TaOx-Based RRAM by Stack Engineering A Prakash, J Park, J Song, J Woo, EJ Cha, H Hwang IEEE Electron Device Letters 36 (1), 32-34, 2014 | 162 | 2014 |
| Various threshold switching devices for integrate and fire neuron applications D Lee, M Kwak, K Moon, W Choi, J Park, J Yoo, J Song, S Lim, C Sung, ... Advanced Electronic Materials 5 (9), 1800866, 2019 | 158 | 2019 |
| Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application A Prakash, D Deleruyelle, J Song, M Bocquet, H Hwang Applied Physics Letters 106 (23), 2015 | 111 | 2015 |
| Optimized Programming Scheme Enabling Linear Potentiation in Filamentary HfO2 RRAM Synapse for Neuromorphic Systems J Woo, K Moon, J Song, M Kwak, J Park, H Hwang IEEE Transactions on Electron Devices 63 (12), 5064-5067, 2016 | 97 | 2016 |
| Nanoscale (∼10nm) 3D vertical ReRAM and NbO2threshold selector with TiN electrode E Cha, J Woo, D Lee, S Lee, J Song, Y Koo, J Lee, CG Park, MY Yang, ... 2013 IEEE International Electron Devices Meeting, 10.5. 1-10.5. 4, 2013 | 97 | 2013 |
| Field-induced nucleation in threshold switching characteristics of electrochemical metallization devices J Yoo, J Park, J Song, S Lim, H Hwang Applied Physics Letters 111 (6), 2017 | 83 | 2017 |
| Nanometer‐Scale Phase Transformation Determines Threshold and Memory Switching Mechanism BG Chae, JB Seol, JH Song, K Baek, SH Oh, H Hwang, CG Park Advanced materials 29 (30), 1701752, 2017 | 79 | 2017 |
| Improved synapse device with MLC and conductance linearity using quantized conduction for neuromorphic systems S Lim, C Sung, H Kim, T Kim, J Song, JJ Kim, H Hwang IEEE Electron Device Letters 39 (2), 312-315, 2018 | 74 | 2018 |
| Threshold switching behavior of Ag-Si based selector device and hydrogen doping effect on its characteristics J Yoo, J Woo, J Song, H Hwang Aip Advances 5 (12), 2015 | 63 | 2015 |
| Improved Endurance of HfO2-Based Metal- Ferroelectric-Insulator-Silicon Structure by High-Pressure Hydrogen Annealing S Oh, J Song, IK Yoo, H Hwang IEEE Electron Device Letters 40 (7), 1092-1095, 2019 | 60 | 2019 |
| Steep Slope Field-Effect Transistors With Ag/TiO2-Based Threshold Switching Device J Song, J Woo, S Lee, A Prakash, J Yoo, K Moon, H Hwang IEEE Electron Device Letters 37 (7), 932-934, 2016 | 59 | 2016 |
| Effect of nitrogen doping on variability of TaOx-RRAM for low-power 3-bit MLC applications SH Misha, N Tamanna, J Woo, S Lee, J Song, J Park, S Lim, J Park, ... ECS Solid State Letters 4 (3), P25, 2015 | 58 | 2015 |
| Hardware implementation of associative memory characteristics with analogue-type resistive-switching device K Moon, S Park, J Jang, D Lee, J Woo, E Cha, S Lee, J Park, J Song, ... Nanotechnology 25 (49), 495204, 2014 | 58 | 2014 |
| Effect of conductance linearity and multi-level cell characteristics of TaOx-based synapse device on pattern recognition accuracy of neuromorphic system C Sung, S Lim, H Kim, T Kim, K Moon, J Song, JJ Kim, H Hwang Nanotechnology 29 (11), 115203, 2018 | 52 | 2018 |
| Bidirectional threshold switching in engineered multilayer (Cu2O/Ag: Cu2O/Cu2O) stack for cross-point selector application J Song, A Prakash, D Lee, J Woo, E Cha, S Lee, H Hwang Applied Physics Letters 107 (11), 2015 | 51 | 2015 |
| Effects of RESET current overshoot and resistance state on reliability of RRAM J Song, D Lee, J Woo, Y Koo, E Cha, S Lee, J Park, K Moon, SH Misha, ... IEEE electron device letters 35 (6), 636-638, 2014 | 49 | 2014 |
| Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memory FG Aga, J Woo, J Song, J Park, S Lim, C Sung, H Hwang Nanotechnology 28 (11), 115707, 2017 | 44 | 2017 |
Hyunsang HwangPOSTECH, KoreaΗ διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα postech.ac.kr
