Άρθρα με εντολές δημόσιας πρόσβασης - Gaudenzio MeneghessoΜάθετε περισσότερα
Δεν είναι διαθέσιμο πουθενά: 125
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies
G Verzellesi, D Saguatti, M Meneghini, F Bertazzi, M Goano, ...
Journal of Applied Physics 114 (7), 2013
Εντολές: Government of Italy
Buffer traps in Fe-doped AlGaN/GaN HEMTs: Investigation of the physical properties based on pulsed and transient measurements
M Meneghini, I Rossetto, D Bisi, A Stocco, A Chini, A Pantellini, C Lanzieri, ...
IEEE Transactions on Electron Devices 61 (12), 4070-4077, 2014
Εντολές: Government of Italy
Gate conduction mechanisms and lifetime modeling of p-gate AlGaN/GaN high-electron-mobility transistors
A Stockman, F Masin, M Meneghini, E Zanoni, G Meneghesso, ...
IEEE Transactions on Electron Devices 65 (12), 5365-5372, 2018
Εντολές: European Commission
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs
A Stockman, E Canato, A Tajalli, M Meneghini, G Meneghesso, E Zanoni, ...
2018 IEEE international reliability physics symposium (IRPS), 4B. 5-1-4B. 5-4, 2018
Εντολές: European Commission
Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes
M Meneghini, M la Grassa, S Vaccari, B Galler, R Zeisel, P Drechsel, ...
Applied Physics Letters 104 (11), 2014
Εντολές: Government of Italy
Potential induced degradation of N-type bifacial silicon solar cells: An investigation based on electrical and optical measurements
M Barbato, A Barbato, M Meneghini, G Tavernaro, M Rossetto, ...
Solar Energy Materials and Solar Cells 168, 51-61, 2017
Εντολές: Government of Italy
Influence of shunt resistance on the performance of an illuminated string of solar cells: theory, simulation, and experimental analysis
M Barbato, M Meneghini, A Cester, G Mura, E Zanoni, G Meneghesso
IEEE Transactions on Device and Materials Reliability 14 (4), 942-950, 2014
Εντολές: Government of Italy
Perimeter driven transport in the p-GaN gate as a limiting factor for gate reliability
S Stoffels, N Posthuma, S Decoutere, B Bakeroot, AN Tallarico, ...
2019 IEEE International Reliability Physics Symposium (IRPS), 1-10, 2019
Εντολές: European Commission
Numerical investigation of the lateral and vertical leakage currents and breakdown regimes in GaN-on-Silicon vertical structures
D Cornigli, S Reggiani, E Gnani, A Gnudi, G Baccarani, P Moens, ...
2015 IEEE International Electron Devices Meeting (IEDM), 5.3. 1-5.3. 4, 2015
Εντολές: European Commission
A physics-based approach to model hot-electron trapping kinetics in p-GaN HEMTs
N Modolo, C De Santi, A Minetto, L Sayadi, S Sicre, G Prechtl, ...
IEEE Electron Device Letters 42 (5), 673-676, 2021
Εντολές: Government of Italy
Degradation of InGaN-based LEDs: Demonstration of a recombination-dependent defect-generation process
N Renso, C De Santi, A Caria, F Dalla Torre, L Zecchin, G Meneghesso, ...
Journal of Applied Physics 127 (18), 2020
Εντολές: Government of Italy
High-current stress of UV-B (In) AlGaN-based LEDs: Defect-generation and diffusion processes
D Monti, C De Santi, S Da Ruos, F Piva, J Glaab, J Rass, S Einfeldt, ...
IEEE Transactions on Electron Devices 66 (8), 3387-3392, 2019
Εντολές: German Research Foundation, Federal Ministry of Education and Research, Germany
Electric field and self-heating effects on the emission time of iron traps in GaN HEMTs
M Cioni, N Zagni, L Selmi, G Meneghesso, M Meneghini, E Zanoni, ...
IEEE Transactions on Electron Devices 68 (7), 3325-3332, 2021
Εντολές: Government of Italy
Gate reliability of p-GaN gate AlGaN/GaN high electron mobility transistors
M Ge, M Ruzzarin, D Chen, H Lu, X Yu, J Zhou, C De Santi, R Zhang, ...
IEEE Electron Device Letters 40 (3), 379-382, 2019
Εντολές: National Natural Science Foundation of China
Analysis of magnesium zinc oxide layers for high efficiency CdTe devices
E Artegiani, M Leoncini, M Barbato, M Meneghini, G Meneghesso, ...
Thin Solid Films 672, 22-25, 2019
Εντολές: Government of Italy
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry
M Meneghini, I Rossetto, M Borga, E Canato, C De Santi, F Rampazzo, ...
2017 IEEE International Reliability Physics Symposium (IRPS), 4B-5.1-4B-5.5, 2017
Εντολές: European Commission
Cumulative hot-electron trapping in GaN-based power HEMTs observed by an ultrafast (10 V/Ns) on-wafer methodology
N Modolo, C De Santi, A Minetto, L Sayadi, S Sicre, G Prechtl, ...
IEEE Journal of Emerging and Selected Topics in Power Electronics 10 (5 …, 2021
Εντολές: Government of Italy
Investigation of nBTI degradation on GaN-on-Si E-mode MOSc-HEMT
AG Viey, W Vandendaele, MA Jaud, J Cluzel, JP Barnes, S Martin, ...
2019 IEEE International Electron Devices Meeting (IEDM), 4.3. 1-4.3. 4, 2019
Εντολές: Agence Nationale de la Recherche
Hot-electron trapping and hole-induced detrapping in GaN-based GITs and HD-GITs
E Fabris, M Meneghini, C De Santi, M Borga, Y Kinoshita, K Tanaka, ...
IEEE Transactions on Electron Devices 66 (1), 337-342, 2018
Εντολές: Government of Italy
Observation of hot electron and impact ionization in N-polar GaN MIS-HEMTs
D Bisi, C De Santi, M Meneghini, S Wienecke, M Guidry, H Li, E Ahmadi, ...
IEEE Electron Device Letters 39 (7), 1007-1010, 2018
Εντολές: US Department of Defense
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