| A scalable neuristor built with Mott memristors MD Pickett, G Medeiros-Ribeiro, RS Williams Nature materials 12 (2), 114-117, 2013 | 1106 | 2013 |
| Shape transition of germanium nanocrystals on a silicon (001) surface from pyramids to domes G Medeiros-Ribeiro, AM Bratkovski, TI Kamins, DAA Ohlberg, RS Williams Science 279 (5349), 353-355, 1998 | 1059 | 1998 |
| Sub-nanosecond switching of a tantalum oxide memristor AC Torrezan, JP Strachan, G Medeiros-Ribeiro, RS Williams Nanotechnology 22 (48), 485203, 2011 | 831 | 2011 |
| Intermixing and shape changes during the formation of InAs self-assembled quantum dots JM Garcıa, G Medeiros-Ribeiro, K Schmidt, T Ngo, JL Feng, A Lorke, ... Applied Physics Letters 71 (14), 2014-2016, 1997 | 805 | 1997 |
| Memristor− CMOS hybrid integrated circuits for reconfigurable logic Q Xia, W Robinett, MW Cumbie, N Banerjee, TJ Cardinali, JJ Yang, W Wu, ... Nano letters 9 (10), 3640-3645, 2009 | 803 | 2009 |
| High switching endurance in TaOx memristive devices JJ Yang, MX Zhang, JP Strachan, F Miao, MD Pickett, RD Kelley, ... Applied Physics Letters 97 (23), 2010 | 784 | 2010 |
| Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor F Miao, JP Strachan, JJ Yang, MX Zhang, I Goldfarb, AC Torrezan, ... Adv. Mater 23 (47), 5633-5640, 2011 | 527 | 2011 |
| Coulomb interactions in small charge-tunable quantum dots: A simple model RJ Warburton, BT Miller, CS Dürr, C Bödefeld, K Karrai, JP Kotthaus, ... Physical Review B 58 (24), 16221, 1998 | 409 | 1998 |
| Charged excitons in self-assembled semiconductor quantum dots RJ Warburton, CS Dürr, K Karrai, JP Kotthaus, G Medeiros-Ribeiro, ... Physical review letters 79 (26), 5282, 1997 | 405 | 1997 |
| Direct identification of the conducting channels in a functioning memristive device JP Strachan, MD Pickett, JJ Yang, S Aloni, ALD Kilcoyne, ... Adv. Mater 22 (32), 3573-3577, 2010 | 395 | 2010 |
| Carrier relaxation and electronic structure in InAs self-assembled quantum dots KH Schmidt, G Medeiros-Ribeiro, M Oestreich, PM Petroff, GH Döhler Physical review B 54 (16), 11346, 1996 | 395 | 1996 |
| Self-assembled growth of epitaxial erbium disilicide nanowires on silicon (001) Y Chen, DAA Ohlberg, G Medeiros-Ribeiro, YA Chang, RS Williams Applied Physics Letters 76 (26), 4004, 2000 | 362 | 2000 |
| Shell structure and electron-electron interaction in self-assembledInAs quantum dots M Fricke, A Lorke, JP Kotthaus, G Medeiros-Ribeiro, PM Petroff Europhysics Letters 36 (3), 197, 1996 | 355 | 1996 |
| Few-electron ground states of charge-tunable self-assembled quantum dots BT Miller, W Hansen, S Manus, RJ Luyken, A Lorke, JP Kotthaus, S Huant, ... Physical Review B 56 (11), 6764, 1997 | 346 | 1997 |
| Evolution of Ge islands on Si (001) during annealing TI Kamins, G Medeiros-Ribeiro, DAA Ohlberg, R Stanley Williams Journal of Applied Physics 85 (2), 1159-1171, 1999 | 322 | 1999 |
| Electron and hole energy levels in InAs self‐assembled quantum dots G Medeiros‐Ribeiro, D Leonard, PM Petroff Applied Physics Letters 66 (14), 1767-1769, 1995 | 292 | 1995 |
| Anisotropy of the Raman spectra of nanographite ribbons LG Cançado, MA Pimenta, BRA Neves, G Medeiros-Ribeiro, T Enoki, ... Physical review letters 93 (4), 047403, 2004 | 268 | 2004 |
| Engineering nonlinearity into memristors for passive crossbar applications J Joshua Yang, MX Zhang, MD Pickett, F Miao, J Paul Strachan, WD Li, ... Applied Physics Letters 100 (11), 2012 | 258 | 2012 |
| Inverse bloch oscillator: Strong terahertz-photocurrent resonances at the bloch frequency K Unterrainer, BJ Keay, MC Wanke, SJ Allen, D Leonard, ... Physical review letters 76 (16), 2973, 1996 | 251 | 1996 |
| State dynamics and modeling of tantalum oxide memristors JP Strachan, AC Torrezan, F Miao, MD Pickett, JJ Yang, W Yi, ... IEEE transactions on electron devices 60 (7), 2194-2202, 2013 | 245 | 2013 |
R. Stanley WilliamsTexas A & M University ECE DepartmentΗ διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα rstanleywilliams.com
